Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Simultaneous low extinction and high local field enhancement in Ag nanocubes

We theoretically investigate surface plasmon resonance properties in Au and Ag cubic nanoparticles and find a novel plasmonic mode that exhibits simultaneous low extinction and high local field enhancement properties. We analyse this mode from different aspects by looking at the distribution patterns of local field intensity, energy flux, absorption and charge density. We find that in the mode the polarized charge is highly densified in a very limited volume around the corner of the nanocube and results in very strong local field enhancement. Perturbations of the incident energy flux and light absorption are also strongly localized in this small volume of the corner region, leading to both low absorption and low scattering cross section. As a result, the extinction is low for the mode. Metal nanoparticles involving such peculiar modes may be useful for constructing nonlinear compound materials with low linear absorption and high nonlinearity.     

Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.     

Influence of DC electric field on the Lennard-Jones potential and phonon vibrations of carbon nanotube on catalyst

Influence of DC electric field on carbon nanotube (CNT) growth in chemical vapor deposition is studied. Investigation of electric field effect in van der Waals interaction shows that increase in DC electric field raises the magnitude of attractive term of the Lennard-Jones potential. By using a theoretical model based on phonon vibrations of CNT on catalyst, it is shown that there is an optimum field for growth. Also it is observed that CNT under optimum electric field is longer than CNT in the absence of field. Finally, the relation between optimum DC electric field and type of catalyst is investigated and for some intervals of electric field, the best catalyst is introduced, which is very useful for experimental researches.     

Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.     

Combined effects of electric field and hydrostatic pressure on electron states in asymmetric GaAs/(Ga,Al) triple quantum dots

The combined effects of an in-growth direction applied electric field and hydrostatic pressure on the exciton binding energy and photoluminescence energy transitions are reported in this work for triple vertically coupled quantum dots. The calculations have been carried out within the effective mass approximation, and using a variational procedure. The results show that the exciton binding energy and the photoluminescence energy transitions are functions of external probes like the hydrostatic pressure and the applied electric field.     

Magnetic Tops in Dusty Plasmas

Paper contains the results of investigation of separate dust granules mechanical state. Observations were performed in high optical resolution. Magnetic induction varied up to 400 G. Motion of particles of different shapes was studied separately. These shapes were: ideally spherical, spherical with defects and non‐spherical. The peculiar physical features of fast rotating dusty granules (tops) were observed. They are the emergence of magnetic moment of rotating charged granule and the orientation change of magnetic moment at magnetic field superimposition. The effects observed in magnetic field are supplied with qualitative interpretation (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature effect on the threshold frequency of absorption in a quantum pseudodot

The threshold frequency of absorption in a quantum pseudodot under the influence of temperature and applied magnetic field is calculated. The threshold frequency of absorption is computed as a function of temperature and applied magnetic field. The linear and nonlinear dependence of the absorption threshold frequency on magnetic field and temperature has been showed. According to the results obtained from the present work, we find that the linear and nonlinear dependence of the absorption threshold frequency depends on used range of the temperatures and magnetic fields.