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991.
膜的一维尺寸大大小于其余两维。一般把厚度小于1μm的膜称为薄膜,反之则称为厚膜。由于薄膜材料具有许多优异性能,因此近年来薄膜科学的发展极为迅速,涌现出许多薄膜制备技术与方法,如真空蒸发沉积、磁控溅射沉积、离子束溅射沉积、金属有机物化学气相沉积和分子束外延等等。虽然这些各具特色的方法在薄膜研究中得到了广泛应用,但是都各具局限性,不能满足薄膜研究和制备的需要,而激光则具有单色性和方向性好、功率密度高等一系列优点。激光沉积薄膜的方法主要分为两类:一类是激光化学反应沉积,如激光化学气相沉积(laser chemical vapor dep… 相似文献
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Structural and Optical Properties of Zinc Nitride Films Prepared by Pulsed Filtered Cathodic Vacuum Arc Deposition
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SENADIM TUZEMEN Ebru KAVAK Hamide ESEN Ramazan 《中国物理快报》2007,24(12):3477-3480
Polycrystalline zinc nitride films are deposited on Coming 7059 glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD). The crystallographic structure is studied by means of x-ray diffraction. These measurements show that all the films are crystallized in the cubic structure, in a preferred orientation along the (332) and (631) directions. Weak XRD signal shows small crystallites distributed in an amorphous tissue. A small improvement of crystallinity is observed with annealing. Optical parameters such as absorption, energy band gap, Urbach tail, extinction coefficients have been determined. The Urbach tail energy is decreased with annealing at 500℃ for one hour. Energy band gap values are found to be increased by annealing. 相似文献
996.
Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator
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Polyamide-6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air. 相似文献
997.
Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials
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Low-density materials, commercially available hydrogensilsesquioxane (HSQ) offer a low dielectric constant. HSQ films can be obtained by spin on deposition (SOD). In this work, low-dielectric-constant HSQ films are prepared by using D5 (decamethylcyclopentasiloxane) as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field. 相似文献
998.
Nanocrystalline porous TiO2 films were prepared on conducting glass supports (ITO) by processed commercial TiO2 nanometre powder (P25). Three methods of physical dispersing for TiO2 powder, i.e. grinding, magnetic stirring, sonicleaning, were used to disperse TiO2 nanometre powder. Surface morphologies of TiO2 films were observed by optic-microscope and SEM. It is found that the surface morphologies of TiO2 films are determined not only by the dispersing methods but also by the percentage of TiO2 powder in the dispersing system. Different film morphologies can be obtained under the same preparation condition but with different dispersing methods. A lot of cracks exist on the film surface for which the TiO2 slurry is dispersed by grinding. Magnetic stirring leads to some white points and micro-holes on the film surface. Only a few of micro-holes can be observed on the film surface, in which the TiO2 slurry is dispersed by sonicleaning. Different surface morphologies can also be found with different thicknesses of TiO2 films. Different film thicknesses are due to different percentages of TiO2 powder in the slurry. The related mechanism leading to different features of the surface morphologies for the TiO2 films is discussed. 相似文献
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用脉冲偏压电弧离子镀技术在玻璃基片上制备均匀透明的TiO2薄膜.利用X射线衍射仪、原子力显微镜、扫描电子显微镜、紫外-可见透射光谱仪和纳米压痕仪等手段,对不同脉冲负偏压下合成薄膜的相结构、微观结构、表面形貌、力学和光学性能进行表征.结果表明,沉积态薄膜为非晶态.脉冲负偏压对薄膜性能有明显的影响.随偏压的增加,薄膜厚度、硬度和弹性模量均先增大后减小,前者峰值出现在100—200 V负偏压范围,后两者则在250—350V范围.300 V负偏压时薄膜硬度最高,薄膜达到原子级表面光滑度,均方
关键词:
2薄膜')" href="#">TiO2薄膜
脉冲偏压电弧离子镀
硬度
折射率 相似文献