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Structural and Electrical Characteristics of Pb(Zr0.53,Ti0.47)O3 Thin Films Deposited on Si (100) Substrates 总被引:1,自引:0,他引:1
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Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively. 相似文献
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Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
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Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献
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We investigate the origin of ultraviolet (UV) emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region. 相似文献
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Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature. 相似文献
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本文讨论了每个元都有幂等元作为右单位元的左消半群与幂单半群N的Schuzenberger积M◇N的ρ类,证明了这种半群M与N的Schuzenberger积M◇N的ρ类是右E一半适合半群和弱E-headged半群. 相似文献
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