竖直恒温面自然对流边界层不稳定性研究

在无扰动、随机式扰动以及正弦式扰动下,通过对竖直恒温面处状态Ra为1.328×10^9、Pr为6.24的自然对流进行模拟,探索了热边界层的不稳定性和共振强化自然对流换热。结果表明:(1)竖直自然对流边界层上游位置的随机式扰动对热边界层的影响主要体现在稳定阶段;(2)该状态下的竖直自然对流边界层的特征频率为15 067,且相比于无扰动状态,频率为15 067的正弦式扰动能在竖直恒温面处提高5.15%的换热量;(3)在竖直自然对流边界层上游位置加入特征频率的正弦式扰动,竖直恒温面处的局部努塞尔数Nu均出现明显波动,且波动随着边界层高度的增加而增大。     

HL-1装置脱离等离子体及边界等离子体杂质辐射的观测

首次用三道光纤探测器,伸入HL-1装置内真空室,采集活动石墨孔栏处等离子体光信号,用22m石英长光纤传输光信号至控制室进行观测。通过边界等离子体H_α和杂质辐射的时空分布,初步探讨了HL-1装置的脱离等离子体。     

水准折光及双波长激光效应

本文从“同温度层不完全平行于地面,且在变化”的“任意分层”假设出发,导出了水准折光修正公式,并利用光的色散效应在10~(-6)的精度要求下,求得r=r_T=h_1/h_2=(n_(01)-1)/(n_(02)-1)=常数最后指出,研制双波长激光水准仪的必要性和可能性,并提出了研制此种仪器的技术参数.     

CO oxidation of bare and TiO2-coated NiO-Ni(OH)2 nanoparticles

CO oxidation reactivity of bare and TiO₂-coated nanoparticles consisting of both NiO and Ni(OH)₂ surfaces was studied. For the deposition of TiO₂, atomic layer deposition was used, and formation of three-dimensional domains of TiO₂ on NiO-Ni(OH)₂ could be identified. Based on the data of X-ray Photoelectron Spectroscopy, we suggest that upon TiO₂ deposition only Ni(OH)₂ was remained on the surface, whereas NiO surface disappeared. Both CO adsorption and CO oxidation took place on NiO-Ni(OH)₂ surfaces under our experimental conditions. CO adsorption was almost completely suppressed after TiO₂ deposition, whereas CO oxidation activity was maintained to large extent. It is proposed that bare NiO cannot be active for CO oxidation, and can only uptake CO under our experimental condition, whereas hydroxylated surface of NiO can be active for CO oxidation.     

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×10³ ohm⁻¹ cm⁻¹ (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×10¹⁹ cm⁻³ and mobility μ=98 cm²/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.     

BSO晶体生长固/液边界层结构的实时观测研究

实时测量BSO晶体水平区熔法生长过程中,研究固/液边界层以及边界层两侧的晶体和熔体的显微拉曼光谱,晶体生长固/液边界层以及边界层两侧的熔体和晶体的结构特征, 生长基元结构从熔体结构经边界层过渡到晶体结构的变化过程。结果显示, BSO熔体中存在Bi₃O₄和[SiO₄]的键合结构; Bi₃O₄分子基团在固/液边界层聚合形成[BiO₇]八面体单体、多聚体,与[SiO₄]结构基团联结,在通过固／液边界层时进入格位。     

Skin layer detection of optical coherence tomography images

In this paper, we present an image processing algorithm to automatically and more precisely detect the boundary between the main skin layers: stratum corneum, epidermis, and dermis. The aim of the proposed skin layer detection algorithm is to assist the dermatologists to measure the epidermal thickness (ET) for skin diseases diagnosis and also to assist pharmacologists so that they can make a better decision for prescribing according to the advancement of the skin disorders characterized with ET change.     

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

A theoretical approach is developed that describes the formation of a thin-film of AB-compound layer under the influence of radiation-induced vacancy. The AB-compound layer is formed as a result of a chemical reaction between the atomic species of A and B immiscible layers. The two layers are irradiated with a beam of energetic particles and this process leads to several vacant lattice sites creation in both layers due to the displacement of lattice atoms by irradiating particles. A- and B-atoms diffuse via these lattice sites by means of a vacancy mechanism in considerable amount to reaction interfaces A/AB and AB/B. The reaction interfaces increase in thickness as a result of chemical transformation between the diffusing species and surface atoms (near both layers). The compound layer formation occurs in two stages. The first stage begins as an interfacial reaction controlled process, and the second as a diffusion controlled process. The critical thickness and time are determined at a transition point between the two stages. The influence of radiation-induced vacancy on layer thickness, speed of growth, and reaction rate is investigated under irradiation within the framework of the model presented here. The result obtained shows that the layer thickness, speed of growth, and reaction rate increase strongly as the defect generation rate rises in the irradiated layers. It also shows the feasibility of producing a compound layer (especially in near-noble metal silicide considered in this study) at a temperature below their normal formation temperature under the influence of radiation.     

Thermodynamics of elastic strength of the metal surface layer

This paper presents a physicochemical model that establishes a connection between the elastic strength of the surface layer (SL) of metal and its surface Gibbs energy. The elastic limit of SL along the low-index face of the metal single crystal under stress during the transition from elastic to plastic deformation was calculated. Calculation shows that the elastic limit of metal SL with fcc and bcc structures is approximately three orders of magnitude higher than the yield strength of these metals in bulk and close to nanohardness of the metals, in particular; for Cu(111) и Al(111), it is 5.3 and 2.8?GPa, respectively. In the light of the proposed model, the effect of lowering the elastic strength of metal SL due to adsorption of surfactant is formulated.     

Fractal and structural aspects of adhesion in particulate-filled polymer composites

Two types of composites based on poly(hydroxy ether) and graphite with various amounts of a filler have been investigated by various methods. The methods have been used to estimate the characteristics of adhesion and interfacial layer, including its thickness and tensile strength and interdependence between these values and adhesion. The results are treated on the basis of the theory of irreversible aggregation, cluster theory of the polymer structure and fractal analysis. It is established that all important characteristics of adhesion, interfacial layer and mechanical properties are interconnected with the difference between fractal dimensions of the surface of the aggregates of filler particles and of a polymer matrix, whose structure is distorted under the influence of the filler surface.