高功率激光反射镜的几个关键技术

 分析了制作高功率连续激光反射镜材料的热性能、缺陷及其加工工艺, 提出了制作高功率激光反射镜应考虑的几个关键问题: 反射镜材料的综合热性能比值S, 材料的微观结构、缺陷的大小和晶向的选择, 以及加工工艺的设计。并介绍了实验结果。     

Quantum-chemical study of the interface formed by carboxylic species on TiO<Subscript>2</Subscript> nanoparticles. 1. Nanoparticle surface

The current paper presents results of a quantum-chemical study of the surface structure of nanoparticles of both rutile and anatase crystallographic modifications. Different stages of the surface relaxation are discussed. Water adsorption is considered. The calculations were performed in the spd-basis by using semi-empirical quantum-chemical codes, both sequential and parallel. The results are mainly addressed to the study of the interface formed by titania nanoparticles and a set of carboxylated species, namely, benzoic, bi-isonicotinic acids as well as tris-(2,2′-dcbipyridine) Fe(II) complex placed on the surface of either rutile or anatase polymorphs.This revised version was published online in August 2005 with a corrected issue number.     

Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2

The growth processes and structures of Fe/Si(1 1 1) ultrathin films grown by solid-phase reactive epitaxy were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). It has been revealed that the Fe(1 1 1) thin films with a bcc-type structure were epitaxially grown on a Si(1 1 1) crystal, even at room temperature, and formed a single-domain structure: Fe(1 1 1)∥Si(1 1 1). After annealing at above 600 °C, the Fe(1 1 1) films were transformed into β-FeSi₂ via the collapse of the bcc-type structure to an amorphous or polycrystalline structure. On the basis of the thickness dependences of the growth processes, this phenomenon was discussed in terms of the diffusion of Si into Fe thin films.     

Adsorption of Pb on NiAl(1 1 0): energetics and structure

The adsorption of Pb onto a NiAl(1 1 0) single crystal surface at 300 K has been studied by Auger electron spectroscopy (AES), Low energy electron diffraction (LEED), molecular beam/surface scattering and single crystal adsorption calorimetry (SCAC). AES indicates a Stranski-Krastanov growth mode, i.e., Pb initially grows on NiAl(1 1 0) two-dimensionally until the first layer completes at 0.89 ML, where a superstructure is observed by LEED, followed by 3D islanding. Measurements of the Pb gas that does not stick indicate that Pb sticks on NiAl(1 1 0) with an initial probability of 0.99. The initial heat of adsorption of Pb on NiAl(1 1 0) is 249 ± 10 kJ/mol. Due to the repulsive interactions between Pb adatoms, the heat of adsorption decreases within the first layer to a value identical to the heat of sublimation of bulk Pb (195 kJ/mol), where it remains at higher coverages. This first application of adsorption calorimetry on such a thick sample (75 μm versus 0.2-8 μm previously) demonstrates that adsorption calorimetry can be extended to a wider range of surfaces, since this thickness can be achieved with nearly any single crystal material by simple mechanical thinning.     

Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation

We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500°C. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20min–8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours.     

Influences of Heating Condition and Substrate-Surface Roughness on the Characteristics of Sol-Gel-Derived Hydroxyapatite Coatings

A prepared transparent HA solution was coated on Ti6Al4V substrates by a spin-coating technique. The crystallization of the sol-gel-derived HA coated on the metallic substrates could be done at relatively low firing temperatures (as low as 600°C). The characteristics of the HA-coated layer were dependent on the surface roughness of substrates and heating conditions such as firing temperature, holding time, heating rate, and atmosphere. The heat treatment at a slow heating rate (<2°C/min.) and a long heating time (>10 hrs) at 600°C in air produced the uniform surface and improved the crystallinity. The HA layer coated on 20 m grit-blasted substates was more uniform and had fever cracks after firing, compared with that coated on 100 m grit-blasted rougher substrates.     

Lower bounds for boundary roughness for droplets in Bernoulli percolation

We consider boundary roughness for the ``droplet' created when supercritical two-dimensional Bernoulli percolation is conditioned to have an open dual circuit surrounding the origin and enclosing an area at least l², for large l. The maximum local roughness is the maximum inward deviation of the droplet boundary from the boundary of its own convex hull; we show that for large l this maximum is at least of order l^1/3(logl)^–2/3. This complements the upper bound of order l^1/3(logl)^–2/3 proved in [Al3] for the average local roughness. The exponent 1/3 on l here is in keeping with predictions from the physics literature for interfaces in two dimensions. The research of the first author was supported by NSF grant DMS-9802368. The research of the second author was supported by NSF grants DMS-9802368 and DMS-0103790.Mathematics Subject Classification (2000): Primary 60K35; Secondary 82B20, 82B43     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

Removal of graffiti from the mortar by using Q-switched Nd:YAG laser

This paper presents part of the larger study on microstructural features of mortars and it's effects on laser cleaning process. It focuses on the influence of surface roughness, porosity and moisture content of mortars on the removal of graffiti by Nd:YAG laser. The properties of this laser are as follows: wavelength (λ) 1.06 μm, energy: 500 mJ per pulse, pulse duration: 10 ns. The investigation shows that the variation of laser fluence with the number of pulses required for the laser cleaning can be divided into two zones, namely effective zone and ineffective zone. There is a linear relationship observed between number of pulses required for laser cleaning and the laser fluence in the effective zone, while the number of pulses required for the laser cleaning is almost constant even though the laser fluence increases in the ineffective zone. Moreover, surface roughness, porosity and moisture content of mortar samples have influence on the laser cleaning process. The effect of these parameters become however negligible at the high level of laser fluence. The number of pulses required for the laser cleaning is low for smooth surface or less porous mortar. Furthermore, the wetness of the samples facilitates the cleaning process.     

Vibrational entropy-driven dealloying of Mo(1 0 0) and W(1 0 0) surface alloys

The formation and stability of Cu, Ag and Au-induced c(2 × 2) alloys at the Mo(1 0 0) and W(1 0 0) surfaces have been investigated with low-energy electron microscopy and diffraction. The ordered alloys transform to disordered overlayer structures at elevated temperature. Comparison of the transformation temperatures with energetics obtained from first principles calculations reveals the vibrational entropic contribution to the system free energy that defines alloy thermal stability. Effective Debye temperatures for metal adatoms are determined that exhibit the expected mass and bond strength dependence.