Preparation and Mechanical and Tribological Properties of High-Density Polyethylene/Hydroxyapatite Nanocomposites

High-density polyethylene (HDPE) nanocomposites reinforced with hydroxyapatite nanorods (nHA) were fabricated by means of extrusion and injection molding. The thermal, mechanical, and dry sliding wear properties of HDPE-based nanocomposites filled with nHA loadings up to 20 wt% were investigated. The results of mechanical property characterization showed that nHA additions improved the hardness, elastic modulus, and yield strength of HDPE at the expense of its tensile ductility and impact strength. Thermogravimetric analysis and heat deflection temperature measurements revealed that nHA fillers are very effective to enhance the thermal stability of HDPE. The wear behavior of HDPE/nHA nanocomposites was studied using a pin-on-disk tribometer. nHA fillers of a large aspect ratio improved the wear resistance of HDPE substantially because of their load-bearing effect and the formation of a continuous transfer film on the steel counterface.     

Influence of the blend compatibility on the morphology of thin polymer blend films

Thin films of incompatible polymer blends can form a variety of structures on preparation. For the polymer blend system consisting of two poly(styrene-co-para-bromo-styrene)s at different degrees of bromination, PBr_xS/PBr_yS, the compatibility can be tuned through a variation of the difference in the degree of bromination. Within this blend system, two series of samples with different compatibilities were investigated at various blend compositions. The surface morphology of the thin films was investigated by atomic force microscopy (AFM) measurements, while diffuse X-ray scattering provided additional depth sensitivity at a comparable lateral resolution. The results are indicative for phase separation lateral, as well as perpendicular, to the sample surface.     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

Ftir Studies on LB Film of Amphiphile with Schiff Base as Headgroup and Its Copper Complex

Two different ways to form monolayers and LB films (surface film and subphase film) of the complex have been used, where a novel amphiphile containing Schiff base as a headgroup was used as a ligand. the monolayer behavior at the air/water interface was characterized by π-A isotherms and two-dimensional molecular orientation of alkyl chains in LB films and thermal stability were measured by polarized and variable temperature FTIR transmission spectra, indicating that the LB film of the novel amphiphile and its copper(II) complex are very stable as well as stearic acid. Because incorporating the metal ion into the monolayer makes it more condensed, thermal stability of the LB film was enhanced. as can be compared from their structure and properties, subphase films are superior to surface films.     

A numerical study of rotation effects on jets effusing from inclined holes into a cross-flow

In this work, the complexity of the flow field arising from the impact of the interaction of coolant jets with a hot cross-flow under rotation conditions was numerically simulated using large eddy simulation with artificial inflow boundary condition. The finite-volume method and the unsteady PISO (Pressure Implicit with Splitting of Operators) algorithm were applied on a non-uniform staggered grid. The simulations were performed for four different values of rotation number (Ro) of 0.0, 0.03021, 0.06042, and 0.12084, a jet Reynolds number of 4700, based on the hole width and the jet exit velocity. The air jet was injected at 30° and 90° in the streamwise direction with a density ratio of 1.04 and a velocity ratio of 0.5. The flow fields of the present study were compared with experimental data in order to validate the reliability of the LES technique. It was shown that the rotation has a strong impact on the jet trajectory behaviour and the film cooling effectiveness. The film trajectory always inclines centrifugally. Under rotating conditions, the film trajectory departs from the centreline to the left boundary. The deflection becomes greater as Ro increases. Furthermore, it was also found that the injection angle has a strong impact on separation and reattachment behaviour as well as the strength of the penetration into the cross-flow. As it increases, the distribution of the film cooling downstream the jet exit is more non-uniform and the film cooling effectiveness level slightly decreases.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects

The model of an edge misfit dislocation at the interface of the hollow nanopore and the infinite substrate with surface/interface stress is investigated. Using the complex variable method, analytical solutions for complex potentials of a film due to an edge misfit dislocation located in the film with surface/interface effect are derived, and the stress fields of the film and the edge misfit dislocation formation energy can be obtained. The critical conditions for edge misfit dislocation formation are given at which the generation of an edge misfit dislocation is energetically favourable. The influence of the ratio of the shear modulus between the film and the infinite substrate, the misfit strain, the radius of the nanopore and the surface/interface stress on the critical thickness of the film is discussed.     

Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers

The effect of 0, 0.5, and 1?μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1)/MgO(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1)/MgO(0?0?1) trilayers has been studied using X-ray diffraction, ⁵⁷Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400?°C. As the annealing temperature is increased above 400?°C, a solid-state synthesis of an ordered L1₀-FePd phase begins in the Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500?°C leads to the formation of a disordered Fe_xPd_1?x(0?0?1) phase; however, in samples lacking the Ag layer, the synthesis of Fe_xPd_1?x is preceded by the formation of an ordered L1₂-FePd₃ phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2?μm-thick Ag film does not prevent the synthesis of the L1₀-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 10⁴ times greater than an ordinary chemical bond length.     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法,对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上,采用有限元法计算阴极杆表面电场随二极管电压的变化规律,设计了实验系统,并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时,钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜,实验结果表明,镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约20.6%;在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜,实验结果表明,镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约28.1%。因此,在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。     

低喷淋密度超亲水表面水平管降液膜温度分布

水平管降液膜蒸发广泛应用在石油、化工、海水淡化等领域,对低喷淋密度温度演化规律的研究有助于拓宽其应用范围,理解其微观机理。本文在超亲水表面上结合红外热追踪技术,对水平管降液膜表面的温度演化规律进行了研究,分析了温度分区现象和温升规律。实验中首次发现了马鞍形液膜内部的高温环状结构,并结合三维数值模拟揭示了掺混作用导致的局部高温环状结构形成的内部机理。