Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

Time-resolved study of the AΠ state of CaH by laser spectroscopy

A time-resolved experiment on the A²Π state of gaseous calcium hydride has been performed by applying laser spectroscopic methods. The following zero-pressure lifetime was obtained for the CaH A²Π state: τ_υ´=0 = 33.2 (±3.2) ns and τ_υ´=1 = 33.7 (±5.2) ns. The lifetime was found to be the same for the A²Π_½ and A²Π_3/2 states.     

新型菲涅尔线聚焦聚光太阳电池组件研究

以聚甲基丙烯酸甲脂为材料,采用热压成型工艺加工成型线聚焦菲涅尔聚光透镜(8×),可用于空间、地面光伏系统太阳电池组件的聚光系统,并对在其聚光条件下,太阳电池的电流电压特性进行测试,结果表明,该菲涅尔线聚焦棱镜能有效提高太阳电池的单位输出功率.模具的机械加工精度和光学抛光精度低,是造成其部分聚光率损失的原因.     

新型菲涅尔线聚光太阳电池组件特性分析

以PMMA为材料,采用热压成型工艺加工线聚焦菲涅尔聚光棱镜,对在其聚光条件下不同入射角度情况下太阳电池的电流电压特性进行测试,结果表明:该菲涅尔线聚焦棱镜能有效提高太阳电池的单位输出功率,而且具有比较宽泛的集光角的特性,基本满足实际应用的要求.     

激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.     

The effect of anti-reflection coating of porous silicon on solar cells efficiency

Anti-reflection coatings of solar cells have been fabricated using different techniques. The techniques used include SiO₂ thermal oxidation, ZnO/TiO₂ sputtering deposition and porous silicon prepared by electrochemical etching. Surface morphology and structural properties of solar cells were investigated by using scanning electron microscopy and atomic forces microscopy. Optical reflectance was obtained by using optical reflectometer. I-V characterizations were studied under 80 mW/cm² illumination conditions. Porous silicon was found to be an excellent anti-reflection coating against incident light when it is compared with another anti-reflection coating and exhibited good light-trapping of a wide wavelength spectrum which produced high efficiency solar cells.     

变频控制直接膨胀式太阳能热泵的数值模拟

文中通过对变频控制直接膨胀式太阳能热泵的数值模拟,指出PV/T- SAHP系统实现变频控制从而解决太阳能热泵集热器面积与压缩机的容量不匹配的关键问题是找到系统集热/蒸发器的MSS线.为变工况下太阳能热泵系统的研究提供参考.     

Preparation of chemically deposited thin films of CdS/PbS solar cell

The present paper reports the preparation of a solar cell which has a cross-sectional scheme: ITO/CdS/PbS, containing a commercially transparent conductive ITO; chemically deposited n-type CdS (340 nm) and absorbed layer of p-type PbS (1400 nm). The structural and optical properties of the constituent films are presented. X-ray diffraction showed that all of the thin films are polycrystalline. Using scanning electron microscopy, the present study revealed that the films have uniform surface morphology over the substrate. The solar cell was characterized by determining the open circuit voltage, short-circuit current density, and J–V under 40 mW/cm² solar radiation. The efficiency of the solar cells was 1.35%, which is much higher (0.041, 0.5 and 0.1–0.4%) and slightly smaller (1.65%) than some solar cells reported in the literature.     

Near-infrared quantum cutting in Yb3+ ion doped strontium vanadate

The materials Sr_3−x(VO₄)_2:xYb were successfully synthesized by co-precipitation method varying the concentration of Yb³⁺ ions from 0 to 0.06 mol. It was characterize by powder X-ray powder diffraction (XRD) and surface morphology was studied by scanning electronic microscope (SEM). The photoluminescence (PL) properties were studied by spectrophotometers in near infra red (NIR) and ultra violet visible (UV–VIS) region. The Yb³⁺ ion doped tristrontium vanadate (Sr₃(VO₄)₂) phosphors that can convert a photon of UV region (349 nm) into photons of NIR region (978, 996 and 1026 nm). Hence this phosphor could be used as a quantum cutting (QC) luminescent convertor in front of crystalline silicon solar cell (c-Si) panels to reduce thermalization loss due to spectral mismatch of the solar cells. The theoretical value of quantum efficiency (QE) was calculated from steady time decay measurement and the maximum efficiency approached up to 144.43%. The Sr_(3−x) (VO₄)_2:xYb can be potentiality used for betterment of photovoltaic (PV) technology.