Eosin Y (EY) Photoredox‐Catalyzed Sulfonylation of Alkenes: Scope and Mechanism

Alkyl‐ and aryl vinyl sulfones were obtained by eosin Y (EY)‐mediated visible‐light photooxidation of sulfinate salts and the reaction of the resulting S‐centered radicals with alkenes. Optimized reaction conditions, the sulfinate and alkene scope, and X‐ray structural analyses of several reaction products are provided. A detailed spectroscopic study explains the reaction mechanism, which proceeds through the EY radical cation as key intermediate oxidizing the sulfinate salts.     

Photoisomerization Mechanism of Ruthenium Sulfoxide Complexes: Role of the Metal‐Centered Excited State in the Bond Rupture and Bond Construction Processes

Phototriggered intramolecular isomerization in a series of ruthenium sulfoxide complexes, [Ru(L)(tpy)(DMSO)]ⁿ⁺ (where tpy=2,2’:6’,2’’‐terpyridine; DMSO=dimethyl sulfoxide; L=2,2’‐bipyridine (bpy), n=2; N,N,N’,N’‐tetramethylethylenediamine (tmen) n=2; picolinate (pic), n=1; acetylacetonate (acac), n=1; oxalate (ox), n=0; malonate (mal), n=0), was investigated theoretically. It is observed that the metal‐centered ligand field (³MC) state plays an important role in the excited state S→O isomerization of the coordinated DMSO ligand. If the population of ³MC_S state is thermally accessible and no ³MC_O can be populated from this state, photoisomerization will be turned off because the ³MC_S excited state is expected to lead to fast radiationless decay back to the original ¹GS_S ground state or photodecomposition along the Ru²⁺?S stretching coordinate. On the contrary, if the population of ³MC_S (or ³MC_O) state is inaccessible, photoinduced S→O isomerization can proceed adiabatically on the potential energy surface of the metal‐to‐ligand charge transfer excited states (³MLCT_S→³MLCT_O). It is hoped that these results can provide valuable information for the excited state isomerization in photochromic d⁶ transition‐metal complexes, which is both experimentally and intellectually challenging as a field of study.     

Dynamical Bifurcation in Gas‐Phase XH− + CH3Y SN2 Reactions: The Role of Energy Flow and Redistribution in Avoiding the Minimum Energy Path

The gas‐phase reactions of XH^? (X=O, S) + CH₃Y (Y=F, Cl, Br) span nearly the whole range of S_N2 pathways, and show an intrinsic reaction coordinate (IRC) (minimum energy path) with a deep well owing to the CH₃XH???Y^? (or CH₃S^????HF) hydrogen‐bonded postreaction complex. MP2 quasiclassical‐type direct dynamics starting at the [HX???CH₃???Y]^? transition‐state (TS) structure reveal distinct mechanistic behaviors. Trajectories that yield the separated CH₃XH+Y^? (or CH₃S^?+HF) products directly are non‐IRC, whereas those that sample the CH₃XH???Y^? (or CH₃S^????HF) complex are IRC. The IRCIRC/non‐IRC ratios of 90:10, 40:60, 25:75, 2:98, 0:100, and 0:100 are obtained for (X, Y)=(S, F), (O, F), (S, Cl), (S, Br), (O, Cl), and (O, Br), respectively. The properties of the energy profiles after the TS cannot provide a rationalization of these results. Analysis of the energy flow in dynamics shows that the trajectories cross a dynamical bifurcation, and that the inability to follow the minimum energy path arises from long vibration periods of the X?C???Y bending mode. The partition of the available energy to the products into vibrational, rotational, and translational energies reveals that if the vibrational contribution is more than 80 %, non‐IRC behavior dominates, unless the relative fraction of the rotational and translational components is similar, in which case a richer dynamical mechanism is shown, with an IRC/non‐IRC ratio that correlates to this relative fraction.     

The formation of an oscillating system during the sputtering of sapphire single crystal with pulsed glow discharge

Sapphire (α-Al₂O₃, transparent corundum) single crystals were analyzed with pulsed direct current glow discharge mass spectrometry. Combined hollow cathode was used as a discharge cell. To obtain stable sputtering of dielectric material, a formation of initial surface conductivity via preliminary vacuum deposition of thin metallic layer was proposed. Al and Ta film of different thickness (30–200 nm) were considered for this purpose. The approach was found to provide the effective sputtering of dielectrics. The formation of an oscillating system was shown during the sputtering of sapphire samples in a tantalum combined hollow cathode cell. For oriented sapphire single crystals, periodic oscillations of ²⁷Al⁺ intensity were acquired. This phenomenon was observed only for dielectric single crystals and not for other dielectric samples, e.g. alumina ceramic or fused quartz. The linear dependence of oscillation period on the duration of discharge pulse was found. The origin of these oscillations seems to be attributed to periodic fluctuations of surface conductivity. Oscillation periods calculated for two different orientations of sapphire single crystals (001 and 012) were found to be proportional to the main period of sapphire lattice. Therefore, an assumption that the crystal internal structure of the sample might be the cause of the oscillations is discussed.     

环路跟踪卡尔曼滤波算法的性能分析

基于卡尔曼滤波的环路跟踪算法多是通过一定仿真证明算法性能,没有系统性性能评估,难以较好指导工程应用。在原有算法基础上进行了优化,并系统性地对比分析、评估了基于卡尔曼环路滤波算法性能,以期为算法工程化提供指导。首先提出对跟踪环路反馈调整量进行预测,使之更符合系统实际,减小环路跟踪误差。而后基于卫星信号模拟器输出信号和自生产信号源,充分评估基于卡尔曼滤波环路跟踪算法的收敛时间和灵敏度。仿真结果表明,相比目前工程常用的二阶FFL辅助三阶PLL算法,基于卡尔曼滤波环路跟踪算法能够缩短环路所需稳定时间约90%,并能提升跟踪灵敏度约5 d B,有效改善弱信号场景中接收机输出信息的完好性和连续性。