透明陶瓷透光性能的影响因素

 研究了影响激光透明陶瓷透光性能的主要因素,讨论了陶瓷内部气孔和杂质颗粒等散射粒子、晶界结构中晶界折射率与晶粒折射率的差异以及晶界表面粗糙度等因素对陶瓷透光性能的影响,并定量分析了激光陶瓷透过率随气孔尺寸、气孔率、晶粒相对晶界折射率以及晶界表面粗糙度的变化关系。结果表明： 陶瓷的透过率随着气孔率的减小而增大,但透过率随气孔尺寸的增大而呈现出周期性振荡,且当气孔尺寸与入射光波长可比拟时,陶瓷的透过率会明显降低;在晶界结构中,晶界的折射率与晶粒的折射率相差越小,陶瓷的透过率就越高;晶界表面粗糙度越大,透过率越低。然而,晶界折射率不同于晶粒折射率,这使得其陶瓷透过率降低的程度比对晶界表面粗糙度的影响明显得多。在陶瓷制备过程中,需要重点排除尺寸与入射波长可比拟的气孔, 以抑制晶界结构中第二相的产生。     

透明激光陶瓷散射损耗分析

 为了定量分析激光陶瓷中散射损耗对其透过率的影响,通过建立气孔尺寸分布模型,引入第二相体积比概念,并结合Mie散射、瑞利散射和全散射积分等理论,讨论了激光陶瓷中气孔、晶界第二相和表面粗糙度等引起的散射损耗对激光陶瓷透光性能的影响。研究结果表明：气孔率的大小将明显影响陶瓷透过率,且气孔尺寸分布决定了透过率包络的变化趋势;晶界和表面散射对透过率的影响主要集中在短波长处;在气孔率较低情况下,晶界第二相的存在是导致短波长处透过率急剧降低的主要因素。     

大视场光学遥感器焦平面板的研制

焦平面板作为承载TDICCD器件的部件,其强度、动静态刚度、热稳定性直接影响到遥感器的成像质量.针对目前光学遥感器大视场、宽覆盖的发展趋势,设计了一种新型的焦平面板.选用性能指标优良的高体份SiC/Al复合材料,既满足了结构设计指标的要求,同时又大大降低了产品重量.通过有限元模拟仿真分析和相关试验,验证了设计方案的可行...     

Electromechanical cracking in ferroelectrics driven by large scale domain switching

Experimental results indicate three regimes for cracking in a ferroelectric double cantilever beam (DCB) under combined electromechanical loading. In the loading, the maximum amplitude of the applied electric field reaches almost twice the coercive field of ferroelectrics. Thus, the model of small scale domain switching is not applicable any more, which is dictated only by the singular term of the crack tip field. In the DCB test, a large or global scale domain switching takes place instead, which is driven...     

Electrical and thermal properties of lead titanate glass ceramics

Glass samples with composition of (50−X)PbO-(25+X)TiO₂-25B₂O₃ (where X=0, 5, 10 and 12.5 mol%) were prepared using conventional quenching technique. The glass transition temperature, T_g and crystallization temperature T_c were determined from the DTA. These glass samples were converted to glass ceramics by following two stage heat treatment schedule. The glass ceramic samples were characterized by XRD, SEM and dielectric constant measurements. The XRD results revealed the formation of ferroelectric lead titanate (PT) as a major crystalline phase in the glass ceramics. The density increases and the CTE decreases for all glass ceramics with increase in X (mol%). This may be attributed to increase in PT phase. The SEM results which show rounded crystallites of lead titanate, also supports other results. Hysteresis loops observed at room temperature confirms the ferroelectric nature of glass ceramics. The optimized glass ceramic sample exhibits high dielectric constant which is of technical importance.     

Effect of environment and heat treatment on the optical properties of RF-sputtered SnO2 thin films

Thin films of SnO₂ were deposited by RF-magnetron sputtering on quartz substrates at room temperature in an environment of Ar and O₂. The XRD pattern shows amorphous nature of the as-deposited films. The optical properties were studied using the reflectance and transmittance spectra. The estimated optical band gap (E_g) values increase from 4.15 to 4.3 eV as the Ar gas content decreases in the process gas environment. The refractive index exhibits an oscillatory behavior that is strongly dependent on the sputtering gas environment. The Urbach energy is found to decrease with increase in band gap. The band gap is found to decrease on annealing the film. The role of oxygen defects is explored in explaining the variation of optical parameters.     

First-principles study of thiophene on β-SiC (0 0 1)-(2×1) surface

In this work, we performed density functional calculations to examine the molecular adsorption states of thiophene on β-SiC(0 0 1)-2×1 surface. A number of possible adsorption geometries are considered into two groups as the polymeric thiophene chain and the individual molecules covalently bonded onto the surface. The results show that the polymeric chain on the surface is the less stable adsorption case and individual arch like adsorption case structure is more stable than others. In all adsorption cases, the adsorbed SiC surfaces are characterized as different semiconductors.     

White up-conversion emission in Ho/Tm/Yb tri-doped glass ceramics embedding BaF2 nanocrystals

Ho³⁺/Tm³⁺/Yb³⁺ tri-doped glass ceramics with white light emitting have been developed and demonstrated. Pumped by 980 nm laser diode (LD), intensive red, green and blue up-conversions (UC) were obtained. The green emission is assigned to Ho³⁺ ion and the blue emission is assigned to Tm³⁺ ion, whereas the red emission is the combination contribution of the Ho³⁺ and Tm³⁺ ions. The RGB intensities could be adjusted by tuning the rare-earth ion concentration and pump power intensity. Thus, multicolor of the luminescence, including perfect white light with CIE-X=0.329 and CIE-Y=0.342 in the 1931 CIE chromaticity diagram can be obtained in 0.15 Ho³⁺/0.2Tm³⁺/3Yb³⁺ tri-doped glass ceramics embedding BaF₂ nanocrystals pumped by a single infrared laser diode source of 980 nm at 500 mW. The up-conversion luminescence mechanism of Yb³⁺ sensitize Ho³⁺ and Tm³⁺ ions and the energy transfer from Ho³⁺ to Tm³⁺ in oxy-fluoride silicate glass ceramics were analyzed.     

X-ray photoelectron spectroscopy of Sm-doped CaO-MgO-Al2O3-SiO2 glasses and glass ceramics

Sm³⁺ doped CaO-MgO-Al₂O₃-SiO₂ glass and glass ceramics have been prepared. The diopside crystal (CaMgSi₂O₆) was identified in the glass ceramics by X-ray diffraction analysis. X-ray photoelectron spectra of the glass and glass ceramics were measured by a monochromatised Al-Kα XPS instrument. Sm 3d core level spectra for the Sm doped samples showed that Sm ions are predominantly in the Sm (III) state in glass and glass ceramics. The O 1s core spectra could be fitted by summing the contributions from bridging oxygen (BO) and non bridging oxygen (NBO) for samarium undoped glass, BO, NBO and Si-O-Sm for the doped glass. The O 1s XPS spectrum of undoped glass ceramics was curve fitted with BO and NBO in glass phase, as well as SiOSi, SiOMg and SiOCa in diopside. In addition to the five components above mentioned, SiOSm in diopside also appeared in O 1s XPS spectra of samarium doped glass ceramics. According to the fitting results, we demonstrate that the Sm₂O₃ exist in glass network as a glass modifier. After heat treatment, nearly all the Sm³⁺ existed in diopside phase as the substitution for Ca²⁺.     

SiC晶体生长中流场的优化设计

物理气相输运法(PVT)是实验室最为常见的碳化硅(SiC)大块单晶生长方法.本文在碳化硅晶体生长模型化研究中,针对碳化硅单晶PVT生长过程中的传热传质等现象引入了对流传热中的场协同原理,利用这一原理对生长室内的流场温度场进行了优化,并对改良前后分别进行了数值模拟,研究了该原理对晶体生长的影响.实验室碳化硅单晶的生长成功...