A new high frequency dynamic mechanical analysis system: An approach to direct high frequency testing of tire tread rubber

Dynamic Mechanical Analysis (DMA) systems are measurement devices for obtaining master curves and complex modules of viscoelastic materials, such as rubbers. The conventional DMAs measurement systems in market have several limitations, which restrict their ability for operating at high frequencies. Thus, Williams, Landel and Ferry (WLF) relation is used to produce master curves and predict the material properties at high frequencies. In conventional DMAs, experiments are done in a range of temperatures, and then a master curve is made for a chosen reference temperature by shifting the measurements data to high frequencies. Therefore, the obtained results, which are not based on direct measurements, can be inaccurate. In order to overcome this problem a new simple shear high-frequency DMA (HFDMA) system is designed and built to directly measure the dynamic mechanical properties of viscoelastic material at high frequencies and the strain levels sufficient for tire manufacturers. The new HFDMA can be used to test any viscoelastic materials which have glass transmission temperature (Tg) lower than room temperature (about 23 °C) such as the Styrene-butadiene rubber (SBR). The SBR is the base material for tire tread. The designing process of this new HFDMA is presented in this paper. The rubber specimen shape is chosen by taking into account the shear elastic wave effect, bending, buckling effect and heat generation in the specimen. The repeatability test is accomplished to ensure that the results obtained from the new HFDMA are repeatable and the repeatability uncertainty is about 0.04%. The new HFDMA is validated by comparing to the direct test results of conventional DMA at 100 Hz. The direct high frequency (5 kHz) complex shear modulus and damping factor are compared with the master curve of the conventional DMA developed by the use of WLF relation for SBR. This comparison revealed that the complex shear modulus and damping factor of the SBR obtained from the HFDMA at 5 kHz and 0.05% strain amplitude are about 7% and 6.5% higher than those obtained from the conventional DMA, respectively.     

The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C₆₀) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.     

Influence of aspect ratio and arrangement direction on the shear behavior of ellipsoids

This work studies the macroscopic and microscopic behaviors of ellipsoids under triaxial tests using 3D discrete element method (DEM) simulation. To avoid the boundary effect, a novel stress servo-controlled periodic boundary condition is proposed to maintain the confining pressure of samples during testing. The shape features of ellipsoids are investigated, including the aspect ratio of elongated/oblate ellipsoids and the initial arrangement directions of ellipsoids. The macroscopic properties of ellipsoidal particle samples, such as the deviatoric stress, volumetric strain, internal friction angle, as well as dilatancy angles are explored. Elongated and oblate ellipsoids with varying aspect ratios are investigated for the occurrence of stick-slips. In addition, it is demonstrated that the initial arrangement direction has a significant impact on the coordination number and contact force chains. The corresponding anisotropy coefficients of the entire contact network are analyzed to probe the microscopic roots of macroscopic behavior.     

激光分子束外延方法生长的ZnO薄膜的发光特性

研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于381nm的近带边紫外发射峰和位于450nm的强的蓝绿带发射,根据光致发光激发光谱的特征给出了一个简单的蓝光发射模型。对比YAG脉冲激光激发和氙灯激发得到的实验光谱,我们认为不同的光谱特征和样品发光的激发机制有关,紫外峰发射需激发强度超过一定值才能观察到,而蓝带发射则在一定的激发强度下迅速饱和。     

PPLT倍频宽线宽掺镱双包层光纤放大激光

分别通过理论和实验研究了周期性极化的钽酸锂（PPLT）倍频宽线宽准连续掺镱双包层光纤放大激光.PPLT样品长为40 mm,极化周期为7.67 μm.基频光的中心波长为1064 nm,线宽约为6 nm.从基频光的光谱特性出发,利用超晶格倍频理论,解释了实验中获得的倍频温度与二次谐波功率之间的关系.在基频光的功率为2.2 W时,获得的宽线宽光纤激光倍频效率为1.8%.     

管道超结构轴向带隙特性分析及实验研究

本文提出一种新型管道超结构元胞构型,其轴向振动带隙包括局域共振型和布拉格(Bragg)散射型两种带隙,该结构在2 500 Hz内共有两阶带隙,且第二阶带隙频率范围较宽。分别应用传递矩阵法和有限元法计算了该结构的能带结构分布及有限周期结构传输特性;搭建了包含4个元胞的管道超结构实验平台进行振动测试,并与计算结果进行对比验证;最后讨论了不同参数对其带隙分布的影响规律。结果表明,所研究管道超结构在2 500 Hz内共有两阶带隙,第一阶带隙主要为局域共振型带隙,凸台和振子的几何尺寸对其影响较大,元胞尺寸对其影响较小。第二阶带隙主要为布拉格散射型带隙,带隙宽度可达923 Hz,该带隙分布随元胞长度、凸台长度和振子厚度改变而改变。合理设计结构各部分几何尺寸,可满足工程中特定频段抑振的需求。     

h-BN型超晶格等离子体光子晶体能带特性研究

六方氮化硼(h-BN)晶格结构是一种类六方对称复式超晶格结构。具有h-BN晶格构型的光子晶体以其宽光子带隙特点受到国内外学者的广泛关注。本文利用不同尺度低压气体放电管与Al₂O₃介质棒周期性排列,构建了新型h-BN型超晶格等离子体光子晶体,实现其空间结构和等离子体参数的动态调控。利用微波透射谱对比研究了h-BN型超晶格与简单三角晶格等离子体光子晶体禁带位置、宽度和数目。分析了放电电流、介质棒阵列数对不同频段光子带隙的影响,以及电磁波入射角度对电磁传输特性的影响。结果表明：等离子体的引入不仅能够形成新的光子带隙,而且可以选择性地使部分禁带位置发生移动;相对于简单三角晶格,h-BN型超晶格等离子体光子晶体呈现出更多光子带隙;Al₂O₃介质棒阵列数对等离子体光子晶体禁带位置、宽度和数目均具有重要影响。电磁波入射角度变化越大,电磁传输特性差别越显著,透射谱相关性越差。本文所设计的新型h-BN型超晶格等离子体光子晶体为制作可调谐光子晶体提供了新的思路,在微波和太赫兹波控制领域具有潜在应用价值。     

田字形地震超材料甚低频宽带隙机理

在地球中传播的地震波主要有体波和表面波,而表面波中Rayleigh波对建筑物造成的破坏最为强烈。针对Rayleigh波的振动控制,提出一种田字形超材料结构。相比于传统的地震超材料,这种超材料屏障是由外部口字形框体内部嵌套十字形柱体组成,形成4个可填充区域,其外部框体采用部分埋入的方式,具有高强度、强稳定性、填充方式灵活的特点。应用有限元法计算了田字形超材料的能带结构和传输特性,并通过分析带隙边界处模态振型可知,带隙的打开是由于柱体的局域共振。结合带隙机理可知,柱体结构中土壤填充量不同可改变柱体的质量,形成不同的谐振频率,产生甚低频带隙。为进一步拓宽带隙,设计研究了正、负梯度的质量填充方式,均可得到3.3~13.1 Hz甚低频宽带隙,在谐振频率范围内两者的隔震方式分别为Rayleigh波彩虹捕获和Rayleigh波到体波的转化。最后,采用EI-Centro地震波对填充屏障进行了时程验证,加速度最大幅值衰减超过80%,为地震超材料在减震隔震方面应用提供了新的设计思路和方法。     

体积应变对立方钛酸铅电子结构和光学性质的影响

本文利用第一性原理方法计算并分析了体积应变(-11%~11%)对立方顺电相PbTiO₃的结构、稳定性、电子结构和光学性质的影响。研究发现体积应变后PbTiO₃形成焓增大,稳定性下降,其中压应变对其稳定性的影响比拉应变大。当受到拉伸应变时,立方PbTiO₃由直接带隙半导体变为间接带隙半导体,且带隙随应变增大呈先增大后降低的趋势。在发生压应变时,从复介电函数、复折射率及吸收系数的分析结果可知,在自然光照下PbTiO₃的光吸收能力仅在个别波段有所增大,但总体呈减弱趋势,当产生拉伸应变时,介电峰、吸收峰红移,表明PbTiO₃在可见光范围内光吸收能力增强,并且当应变增大到11%时,PbTiO₃的吸收能力远高于本征立方相。     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。