Maximum-entropy principle for nonlinear hydrodynamic transport in semiconductors

We present, in a strong nonlinear context, a full-band hydrodynamic approach by using the first 13 moments of the distribution function in the framework of extended thermodynamics. Following this approach we show that: (1) the full-band effects of the band structure are described accurately up to high electric fields both in homogeneous and nonhomogeneous conditions; (2) the effectiveness of the dissipation processes can be properly investigated, in homogeneous conditions, only in a strong nonlinear context; and (3) the hyperbolicity region of the system is very large, also in the nonlinear conditions. In this way, by using a strong nonlinear closure, it is possible to describe accurately the transport phenomena in submicron devices, when very high electric fields and field gradients occur (E ≈ 220 kV/cm, E/(dE/dx) ≈ 100 Å).     

Furan-containing conjugated polymers for organic solar cells

Development of organic semiconductors is one of the most intriguing and productive topics in material science and engineering. Many efforts have been made on the synthesis of aromatic building blocks such as benzene, thiophene and pyrrole due to the facile preparation accompanied by the intrinsic environmental stability and relatively efficient properties of the resulting polymers. In the past, furan has been less explored in this field because of its high oxidation potential. Recently, furan has attracted obsession due to its weaker aromaticity, the greater solubilities of furan-containing π-conjugated polymers relative to other benzenoid systems and the accessibility of furan-based starting materials from renewable resources. This review elaborates the advancements of organic photovoltaic polymers containing furan building blocks. The uniqueness and advantages of furan-containing building blocks in semiconducting materials are also discussed.     

Thermoelectric properties of HPHT sintered In-doped Pb0.5Sn0.5Te

The thermoelectric properties of Pb_0.5Sn_0.5Te doped with In at 1.0, 2.0, and 3.0×10¹⁹/cm³ and sintered at a high pressure and high temperature (HPHT) of 4.0 GPa and 800 or 900 °C, respectively, have been studied. All samples show p-type semiconducting behavior with positive thermopower. We find that HPHT sintering of conventionally synthesized materials improves their thermoelectric properties. The highest power factor is obtained for In doping of 2.0×10¹⁹/cm³ with 13.5 μW/cm K² at 230 °C. The corresponding figure of merit is 1.43×10⁻³/K. This represents a twofold improvement in thermoelectric figure of merit, compared to the conventionally sintered materials reported in the literature. When exposed to 400 °C for 10 days, samples sintered at 900 °C exhibit more stable thermoelectric properties, while the properties of those sintered at 800 °C deteriorated. These results demonstrate that HPHT sintering is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials.     

Luminescent properties of cobalt-doped α-ZnAl2S4 spinel type single crystals

The absorption and luminescent properties of α-ZnAl₂S₄:Co spinel type crystals grown by chemical transport reactions method are investigated. The spectra are assigned to the electronic transitions of Co²⁺ ions located in tetrahedral sites. It is shown, that the revealed four radiative spectral components are caused by the ²A(²G)→⁴T₁(⁴F), ⁴T₁(⁴P)→⁴T₂(⁴F), ²E(²G)→ ⁴T₂(⁴F) and ²E(²G)→⁴T₁(⁴F) transitions.     

Solid-phase crystallization of amorphous Si films on glass and Si wafer

When amorphous silicon films deposited on glass by physical or chemical vapor deposition are annealed, they undergo crystallization by nucleation and growth. The growth rate of Si crystallites is the highest in their 〈111〉 directions along or nearly along the film surface. The directed crystallization is likely to develop the 〈110〉//ND or 〈111〉//ND oriented Si crystallites. As the annealing temperature increases, the equiaxed crystallization increases, which in turn increases the random orientation. When amorphous Si is under a stress of the order of 0.1 GPa at about 540 °C, the tensile stress increases the growth rate of Si grains, whereas the compressive stress decreases the growth rate. However, the crystal growth rate increases with the increasing hydrostatic pressure, when the pressure is of the order of GPa at 530–540 °C. These phenomena have been discussed based on the directed crystallization model advanced before, which has been further elaborated.     

Optical properties of BiSBr and BiSeBr crystals

Optical properties of BiSBr and BiSeBr crystals were investigated by the full potential linearized augmented plane wave (FP-LAPW) method with density-functional theory (DFT). The complex dielectric function and optical constants, such as optical absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, were calculated and compared in the energy range of 0–30 eV. Origin of anisotropic behavior of optical spectra was also discussed. The plasmon energy ?ω_p was estimated to be 18 eV for BiSeBr and 20 eV for BiSBr crystal.     

Synthesis of nanocrystalline and mesoporous zinc sulphide from a single precursor Zn(SOCCH3)2Lut2 complex

We report the formation of mesoporous zinc sulphide, composed by the fine network of nanoparticles, which was formed via a single precursor Zn(SOCCH₃)₂Lut₂ complex. The complex was chemically synthesized using zinc carbonate basic, 3,5-lutidine and thioacetic acid, in air. The metal precursor complex was characterized using different conventional techniques. Thermogravimetric analysis (TGA) result indicates that the decomposition of the complex starts at 100 °C and continues up to 450 °C, finally yielding ZnS. ZnS nanocrystals were characterized by powder X-ray diffraction (XRD) technique, field emission scanning electron microscopy (FESEM), N₂-sorption isotherm, UV-vis spectroscopy and photoluminescence (PL) spectroscopy. The grain diameter of nanocrystals was found to be 4-5 nm. The material followed Type-IV N₂-sorption isotherm, which is the characteristic of mesoporous materials. The band gap energy, as obtained from optical measurements was around 3.8 eV.     

The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O₂ flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In₂O₃ and monoclinic CuO. Transmittance of the films decreases with increase in O₂ flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In₂O₃ and CuO. The sheet resistance of the films decreases with increase in O₂ flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In₂O₃ and the conduction mechanism of Cu-In-O thin films is through O vacancy.     

Electron spectrum of δ-doped quantum wells by the Thomas-Fermi method at finite temperatures

The electron spectrum of δ-doped quantum wells in n-GaAs is investigated by means of the Thomas-Fermi (TF) method at finite temperatures. This method shows rapid convergence and good accuracy. Under two-dimensional (2D) doping concentrations 10¹³…2×10¹³ cm⁻², the simplest TF method (T=0 K) can be used to calculate the profiles of the potential well up to T≈200 K. The simplest TF method yields correct results for the electron concentrations and the differences of the electron energy sublevels in the quantum well up to room temperature (T∼300 K).