An I-integral method for crack-tip intensity factor variation due to domain switching in ferroelectric single-crystals

In the present study, an I-integral method is established for solving the crack-tip intensity factors of ferroelectric single-crystals. The I-integral combined with the phase field model is successfully used to investigate crack-tip intensity factor variations due to domain switching in ferroelectricity subjected to electromechanical loadings, which exhibits several advantages over previous methods based on small-scale switching. First, the shape of the switching zone around a crack tip is predicted by the time-dependent Ginzburg–Landau equation, which does not require preset energy-based switching criterion. Second, the I-integral can directly solve the crack-tip intensity factors and decouple the crack-tip intensity factors of different modes based on superimposing an auxiliary state onto an actual state. Third, the I-integral is area-independent, namely, the I-integral is not affected by the integral area size, the polarization distributions, or domain walls. This makes the I-integral applicable to large-scale domain switching. To this end, the electro-elastic field intensity factors of an impermeable crack in PbTiO₃ ferroelectric single crystals are evaluated under electrical, mechanical, and combined loading. The intensity factors obtained by the I-integral agree well with those obtained by the extrapolation technique. From numerical results, the following conclusions can be drawn with respect to fracture behavior of ferroelectrics under large-scale switching. Under displacement controlled mechanical loading, the stress intensity factors (SIFs) decrease monotonically due to the domain switching process, which means a crack tip shielding or effective switching-induced toughening occurs. If an external electric field is applied, the electric displacement intensity factor (EDIF) increases in all cases, i.e., the formed domain patterns enhance the electric crack tip loading. The energy release rate, expressed by the crack-tip J-integral, is reduced by the domain switching in all examples, which underlines the switching-induced-toughening effect. In contrast, under stress controlled load, the SIF evolves due to large-scale switching to a stable value, which is higher than the non-switching initial value, i.e., fracture is promoted in this case.     

具有四条裂纹的圆形孔口问题的应力分析

利用复变函数的方法,通过构造保角映射研究了具有四条裂纹(一对非对称共线裂纹和一对对称共线裂纹)的圆形孔口的平面弹性问题,给出了裂纹尖端应力强度因子的解析解.并由此模拟出了具有三条裂纹、对称四条裂纹、非对称共线双裂纹、对称共线双裂纹的圆形孔口,以及非对称十字裂纹,十字裂纹,T形裂纹问题.     

带双裂纹的椭圆孔口问题的应力分析

利用复变方法,通过构造新的保角映射,研究了带双裂纹椭圆孔口的平面弹性问 题,得到了I型与II型裂纹问题应力强度因子的解析解.在极限情形下, 不仅可以还原经典的Griffith裂纹的结果,而且可模拟出十字裂纹和带双裂纹的圆 形孔口问题.