Design of Coaxial Couplers for High Efficiency Helix TWT

The main objective of the paper is to make an efficient design of the input and output coaxial coupler for a helix TWTs. An approach has been developed for the efficient design and analysis of the coaxial couplers in the practical situation. Normally multi-section impedance transformer approach is used for any wide band coupler. For a space helix TWT, coupler should be wide bandwidth and small size. In this case coupler is matched with helix slow wave structure and the standard 50-ohm connectors. The simulated return loss (dB) profile for different type of couplers is obtained by using Ansoft HFSS, CST microwave studio and compares those with experimental results. The tip loss design at sever ends for the input and the output section has been also optimized.     

Design of a higher harmonic cavity for the SSRF storage ring

Higher harmonic cavity used in the third generation synchrotron light source increases the Touschek lifetime. The higher harmonic cavity of Shanghai Synchrotron Radiation Facility (SSRF) is a 1.5GHz passive superconducting cavity. Its higher order modes (HOM) are extracted by a ferrite HOM damper out of the cryostat. Multi-cell cavity is chosen concerning the voltage. The harmonic cavity dynamics, beam dynamics with passive harmonic cavity and the design of single cell cavity are included in this paper.     

Studies on high order mode of bell-shaped prototype cavities

Aluminium and copper prototype cavities were designed to study higher order modes (HOM). An automatic field mapping system was developed with LabVIEW to measure the radiofrequency (RF) characteristics, such as resonant frequency, Q-value, shunt impedance and electromagnetic field distribution of the higher-order modes in a model RF cavity. Two kinds of the bell-shaped cavities were measured using the field mapping system, their frequencies are 1.5GHz and 800~MHz respectively. The fields' distributions of the monopole modes and dipole modes, as well the R/Q values, were measured.     

射频磁控溅射制备氧化钒薄膜的研究

氧化钒（VOx）薄膜是一种广泛应用于红外热成像探测的薄膜材料,研究VOx薄膜的制备工艺、获取高电阻温度系数（TCR）的VOx薄膜具有重要意义。以高纯金属钒作靶材,采用射频磁控溅射的方法在室温下制备了VOx薄膜。主要研究了氩氧流量比以及功率等工艺参数对薄膜TCR的影响,获得了较好的工艺参数。采用万用表和X射线光电子能谱仪（XPS）分别测试了不同条件下射频磁控溅射法制备的VOx薄膜的电阻特性和薄膜成分,测试结果表明,采用所获得的较好工艺参数制备的VOx薄膜TCR值大于1.8%。     

RF-PACVD of water repellent and protective HMDSO coatings on bell metal surfaces: Correlation between discharge parameters and film properties

Hexamethyldisiloxane (HMDSO) films have been deposited on bell metal using radiofrequency plasma assisted chemical vapor deposition (RF-PACVD) technique. The protective performances of the HMDSO films and their water repellency have been investigated as a function of DC self-bias voltage on the substrates during deposition. Plasma potential measurements during film deposition process are carried out by self-compensated emissive probe. Optical emission spectroscopy (OES) analyses of the plasma during deposition reveal no significant change in the plasma composition within the DC self-bias voltage range of −40 V to −160 V that is used. Raman and X-ray photoelectron spectroscopy (XPS) studies are carried out for film chemistry analysis and indicate that the impinging ion energy on the substrates influences the physio-chemical properties of the HMDSO films. At critical ion energy of 113 qV (corresponding to DC self-bias voltage of −100 V), the deposited HMDSO film exhibits least defective Si-O-Si chemical structure and highest inorganic character and this contributes to its best corrosion resistance behavior. The hardness and elastic modulus of the films are found to be bias dependent and are 1.27 GPa and 5.36 GPa for films deposited at −100 V. The critical load for delamination is also bias dependent and is 11 mN for this film. The water repellency of the HMDSO films is observed to be dependent on the variation in surface roughness. The results of the investigations suggest that HMDSO films deposited by RF-PACVD can be used as protective coatings on bell metal surfaces.     

Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering method under different substrate temperatures. The microstructural, electrical and optical properties of AZO films were investigated in a wide temperature range from room temperature up to 350 °C by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), Hall measurement, and UV–visible meter. The nature of AZO films is polycrystalline thin films with hexagonal wurtzite structure and a preferred orientation along c-axis. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural, electrical and optical properties of the AZO films. The atomic arrangement of AZO film having an wurtzite structure was indeed identified by the HRTEM as well as the Selected Area Electron Diffraction (SAED). The defect density of AZO film was investigated by HRTEM. The film deposited at 100 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.6 × 10⁻⁴ Ω cm. The average transmission of AZO films in the visible range is all over 85%. More importantly, the low-resistance and high-transmittance AZO film was also prepared at a low temperature of 100 °C.     

脉冲调制射频功率测量中的标定及FFT分析方法研究

利用电压/电流探头和数字示波器实现了脉冲调制射频功率测量。电压/电流探头输出的电压、电流信号由数字示波器采集存储,电压、电流的幅值及相位差由FFT分析得到。在不同频率下,对电压、电流幅值及相位差进行标定,获得计算射频功率的标定参数。分析表明电压、电流相位差是影响标定系数的主要因素,FFT方法处理非稳态调幅电压、电流时存在问题,只有在零无功功率处才能获得可信的吸收功率。     

自由电子激光对束流品质的要求与改善措施

本文叙述了自由电子激光对电子束发射度、能散度和稳定性的要求，并介绍了采用谐波混频腔、光阴极微波电子枪和超导技术等改善措施中的关键技术问题。     

Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

Carbon nitride (CNx) thin films have been grown on Si 〈1 0 0〉 by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N₂ plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C⁺ ions, C atoms, C₂, N₂; and CN radicals, and N₂⁺ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the “four-probe-test method” determining sheet resistivity and correlating surface conductivity with chemical composition.     

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用Langmuir探针对射频(13.56 MHz)感应等离子体进行了诊断,给出了Ar等离子体轴向和径向参数随气压的变化。采用发射光谱测量了等离子体中氩原子的750.3nm谱线强度随气压在轴向的变化,其变化趋势与Langmuir探针测量结果的变化趋势相一致。测量了氩离子的434.8nm谱线强度随气压在轴向的变化并获得了氩离子的434.8nm谱线强度与氩原子的430.0nm谱线强度的比值在轴向三个不同位置的变化。从测得的结果可知:在放电室中上部形成了均匀稳定的高密度等离子体,在靶附近有所降低,在中部以下等离子体密度逐渐变低;在径向6~7 cm以内的区域等离子体参数变化不大,形成了均匀稳定的等离子体,等离子体参数在器壁处变化明显。