缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

C18 functionalized graphene oxide as a novel coating for solid-phase microextraction

A novel C18 functionalized graphene oxide (GO) coated solid-phase microextraction fiber was prepared by a novel protocol. Based on the strong van der Waals interaction present in GO and abundant oxygenous groups in GO sheets, a simple layer-by-layer self-assembly method was used in the preparation process and then C18 was successfully self-assembled on GO via C-O-Si bonding. Coupled with gas chromatography, extraction performance of the fiber was tested with polycyclic aromatic hydrocarbons (PAHs) as model analytes. The fiber not only exhibited excellent extraction efficiency and selectivity, but also showed many advantages including high rigidity, long service life and well stability toward organic solvent, acidic and alkali solutions, and high temperature. The relative standard deviations for single-fiber repeatability and fiber-to-fiber reproducibility were less than 7.26 and 17.25%, respectively. The detection limits to the PAHs were less than 0.08 μg L(-1) and the calibration curves were linear in a wide range for all analytes. The as-established Solid-phase microextraction GC method was also successfully used for determination of PAHs in two real water samples.     

AlN插入层对a-AlGaN的外延生长的影响

采用有机金属化学气相沉积(MOCVD)在r面蓝宝石衬底上生长a-AlGaN外延膜,研究了AlN插入层对a-AlGaN外延膜的应力和光学性质的影响。根据高分辨X射线衍射(HRXRD)技术和扫描电子显微镜(SEM)我们可以得到,AlN插入层有效地提高了a-AlGaN外延膜的晶体质量并减小了外延膜材料结构的各向异性。由拉曼光谱得到AlN插入层的引入减小了a-AlGaN外延膜的面内压应力,其原因是AlN插入层可以当作衬底有效的调制与减小a-AlGaN外延膜与r面蓝宝石衬底的晶格失配,从而使a-AlGaN的面内应力得到适当释放。对室温下的光致发光进行测量得到AlN插入层的使用使近带边发射峰(NBE)发生了红移,这可能是由于残余应力的减小引起。     

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

We discuss the role of the Al interlayer in the suppression of pinhole formations and also look at the polarity transition of the AlN layers from N-polarity to Al-polarity when this Al interlayer is present. The AlN layers were grown by molecular beam epitaxy on an AlN nucleation layer. A thin Al interlayer was deposited on the initial nucleated AlN layer after the nitridation of the Al-soaked Si (111) substrates. The AlN layer with an Al interlayer showed a relatively smooth surface with a reduced density of pinholes compared with the AlN layer grown without an Al interlayer. In addition, the AlN layer with an Al interlayer showed some stacking faults in the interface between the Si substrate and the A1N layer. We also identify the polarity change of the AlN layer after the insertion of a thin Al interlayer from N-polarity to Al-polarity by chemical etching. A simple model is constructed to explain the polarity change and the pinhole suppression due to the Al interlayer.     

Periodic cracks in a functionally graded piezoelectric layer bonded to a piezoelectric half-plane

Studied is the problem of a periodic array of cracks in a functionally graded piezoelectric strip bonded to a homogeneous piezoelectric material. The properties of the functionally graded piezoelectric strip, such as elastic modulus, piezoelectric constant and dielectric constant, are assumed in exponential forms and vary along the crack direction. The crack surface condition is assumed to be electrically impermeable or permeable. Integral transform and dislocation density functions are employed to reduce the problem to the solution of a system of singular integral equations. The effects of the periodic crack spacing, material constants and the geometry parameters on the stress intensity factor, the energy release ratio and the energy density factor are studied.     

Specific Heat of a Two-Layer Magnetic Superlattice

The specific heats of both a two-layer ferromagnetic superlattice and atwo-layer ferrimagnetic one are studied. It is found that the spin quantumnumbers, the interlayer and intralayer exchange couplings, the anisotropy,the applied magnetic field, and the temperature all affect the specificheat of these superlattices. For both the ferromagnetic and ferrimagneticsuperlattices, the specific heat decreases with increasing the spin quantumnumber, the absolute value of interlayer exchange coupling, intralayerexchange coupling, and anisotropy, while it increases with increasingtemperature at low temperatures. When an applied magnetic field is enhanced, the specific heat decreases in the two-layer ferromagnetic superlattice, while it is almost unchanged in the two-layer ferrimagnetic superlattice at low field range at low temperatures.     

具有弹性夹层的文克勒地基上双层叠合梁的解

将双层叠合梁之间的接触状况拟合为一符合 Goodman假设的弹性夹层 ,导出了Winkler弹性地基上双层叠合梁的微分方程组及其解析解。通过引入“广义夹层反应模量”计入了夹层水平和竖向反力引起的梁截面的剪切和拉压形变效应 ,它有效地提高了计算精度 ,尤其是在双层梁结构有间断的场合。     

用镀有钛过渡层的钼衬底制备无裂纹自支撑金刚石膜

为了解决金刚石膜脱膜开裂的问题,尝试了一种复合衬底,即镀有钛过渡层的钼衬底.利用直流等离子体喷射法在复合衬底上制备了不同厚度无裂纹的自支撑金刚石膜.用扫描电镜(SEM)、拉曼谱和X射线衍射表征金刚石膜的特征,并检测了其断裂强度.结果表明,用复合衬底制备的金刚石膜在950℃具有最小半高宽,在实验温度下所获得的金刚石自支撑膜的断裂强度均超过了500MPa.     

TiAl过渡层对电弧离子镀沉积TiAlN膜层的影响

利用电弧离子镀,在不锈钢和SiCP增强2024铝基复合材料基底上沉积TiAlN薄膜.结果表明:TiAlN膜层直接沉积在不锈钢基底上,膜层呈[111]择优取向;然而,TiAlN膜层沉积在不锈钢基底的TiAl过渡层上,膜层呈[220]方向择优取向;并且随着过渡层从零开始增厚,TiAlN膜层的织构系数T(111)逐渐减小,而T(200)逐渐增大,但膜层一直以[220]方向择优取向,内应力的存在可能是膜层产生[220]方向择优取向的原因.在复合材料基底TiAl过渡层上沉积,随着负脉冲偏压的增加,TiAlN膜层的择优取向由[111]向[200]转变.在不锈钢基底上,没有TiAl过渡层时,膜层表面相对光滑,大颗粒较少;有了TiAl过渡层,表面大颗粒较多;TiAl过渡层不同沉积时间对膜层表面影响不大,颗粒尺寸相差无几.没有TiAl过渡层时,膜层结合强度很差,有了TiAl过渡层,结合强度明显增加,但结合强度的大小随过渡层沉积时间(厚度)变化.