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241.
242.
以液相分散法为基础制备了MoS2纳米片悬浮液.对该悬浮液进行了吸光性能和荧光性能表征;结果显示悬浮液荧光信号明显增强;同时得到增加超声时间、降低离心转速、采用粒径较大的块状粉末和加入球磨工艺这些因素是可以提高悬浮液的吸光度的优化工艺条件.采用微区荧光测试测得了单个MoS2纳米片的荧光光谱,其主峰位置在652 nm,对应的带隙能量是1.9 e V;还对单个纳米片进行退火处理,其荧光信号在退火后有所增强.对MoS2纳米片进行了AFM和SEM表征显示大部分纳米片的平面尺寸在几百纳米,厚度约为几纳米.另外,将MoS2纳米片悬浮液与E51环氧树脂混合,制备了MoS2纳米片增强环氧树脂基复合材料.对该复合材料进行了荧光性能和拉伸性能测试.结果显示复合材料的荧光信号也明显增强;且经退火后,因为复合材料内部残余热应力的关系,该复合材料的荧光信号的峰值位置出现移动.同时,该复合材料的韧性也有提升. 相似文献
243.
Ramiro Quirós-Ovies Dr. Manuel Vázquez Sulleiro Mariano Vera-Hidalgo Javier Prieto Dr. I. Jénnifer Gómez Dr. Víctor Sebastián Prof. Jesús Santamaría Prof. Emilio M. Pérez 《Chemistry (Weinheim an der Bergstrasse, Germany)》2020,26(29):6629-6634
Most air-stable 2D materials are relatively inert, which makes their chemical modification difficult. In particular, in the case of MoS2, the semiconducting 2 H-MoS2 is much less reactive than its metallic counterpart, 1T-MoS2. As a consequence, there are hardly any reliable methods for the covalent modification of 2 H-MoS2. An ideal method for the chemical functionalization of such materials should be both mild, not requiring the introduction of a large number of defects, and versatile, allowing for the decoration with as many different functional groups as possible. Herein, a comprehensive study on the covalent functionalization of 2 H-MoS2 with maleimides is presented. The use of a base (Et3N) leads to the in situ formation of a succinimide polymer layer, covalently connected to MoS2. In contrast, in the absence of base, functionalization stops at the molecular level. Moreover, the functionalization protocol is mild (occurs at room temperature), fast (nearly complete in 1 h), and very flexible (11 different solvents and 10 different maleimides tested). In practical terms, the procedures described here allow for the chemist to manipulate 2 H-MoS2 in a very flexible way, decorating it with polymers or molecules, and with a wide range of functional groups for subsequent modification. Conceptually, the spurious formation of an organic polymer might be general to other methods of functionalization of 2D materials, where a large excess of molecular reagents is typically used. 相似文献
244.
Ke Zheng Yunlin Liu Hongxuan Li Ying Liu Shengwang Yu Bing Zhou Yanxia Wu Bin Tang 《Surface and interface analysis : SIA》2020,52(8):499-506
MoS2/a-C:H multilayer film and MoS2/a-C:H composite film exhibit excellent tribological properties in vacuum, which can be used as the potential space lubricant. The radiation-protective properties of these two films in atomic oxygen (AO) are evaluated. The influences of AO radiation on structure, morphology, and tribological properties of the films were investigated. The results show that AO radiation mainly causes oxidation and increases sp2 C content in both of the films. Furthermore, the MoS2 sublayer on the surface of the multilayer film is oxidized heavily, whereas both the MoS2 and the a-C:H matrix on the surface were oxidized in the composite film. As a result of this, the multilayer film exhibits high friction coefficient and short sliding lifetime in vacuum after AO radiation. Compared with that, the composite film exhibits lower friction and longer sliding time more than 3600 seconds in vacuum, which illustrates it has a good AO radiation protection. This indicates that MoS2/a-C:H composite film is more likely to be used as a potential space lubricant. 相似文献
245.
Huili Zhu Zifan Hong Changjie Zhou Qihui Wu Tongchang Zheng Lan Yang Shuqiong Lan Weifeng Yang 《Frontiers of Physics》2023,18(1):13301
The interfacial properties of MoS2/4H-SiC heterostructures were studied by combining first-principles calculations and X-ray photoelectron spectroscopy. Experimental (theoretical) valence band offsets (VBOs) increase from 1.49 (1.46) to 2.19 (2.36) eV with increasing MoS2 monolayer (1L) up to 4 layers (4L). A strong interlayer interaction was revealed at 1L MoS2/SiC interface. Fermi level pinning and totally surface passivation were realized for 4H-SiC (0001) surface. About 0.96e per unit cell transferring forms an electric field from SiC to MoS2. Then, 1L MoS2/SiC interface exhibits type I band alignment with the asymmetric conduction band offset (CBO) and VBO. For 2L and 4L MoS2/SiC, Fermi level was just pinning at the lower MoS2 1L. The interaction keeps weak vdW interaction between upper and lower MoS2 layers. They exhibit the type II band alignments and the enlarged CBOs and VBOs, which is attributed to weak vdW interaction and strong interlayer orbital coupling in the multilayer MoS2. High efficiency of charge separation will emerge due to the asymmetric band alignment and built-in electric field for all the MoS2/SiC interfaces. The multiple interfacial interactions provide a new modulated perspective for the next-generation electronics and optoelectronics based on the 2D/3D semiconductors heterojunctions. 相似文献
246.
通过水热法合成了一系列MoS2/GQDs复合材料,并制成碳基复合电极。利用电化学测试手段挑选出最佳电极后用于微生物电解池(MEC)阴极的产氢性能研究。实验结果显示: Na2MoO4、半胱氨酸和GQDs的最佳原料配比为375:600:1,制备出的MoS2/GQDs呈现明显的爆米花样纳米片结构,片层厚度在10 nm左右,当碳纸负载量为1.5 mg·cm-2时,MoS2/GQDs碳纸电极的析氢催化能力最佳。在MEC产氢实验中,MoS2/GQDs阴极MEC的产气量、氢气产率、库仑效率、整体氢气回收率、阴极氢气回收率、电能回收率和整体能量回收率分别为51.15±3.15 mL·cycle-1、0.401±0.032 m3H2·m3d-1、91.16±0.054%、66.64±5.39%、72.44±2.60%、217.26±7.42%和77.37±1.50%,均略高于Pt/C阴极MEC或与之媲美。另外,MoS2/GQDs具有良好的长期稳定性,且价格便宜,有利于实际应用。 相似文献
247.
248.
High‐Performance Platinum‐Free Dye‐Sensitized Solar Cells with Molybdenum Disulfide Films as Counter Electrodes
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Sajjad Hussain Dr. Shoyebmohamad F. Shaikh Dr. Dhanasekaran Vikraman Prof. Dr. Rajaram S. Mane Prof. Dr. Oh‐Shim Joo Prof. Dr. Mu Naushad Prof. Dr. Jongwan Jung 《Chemphyschem》2015,16(18):3959-3965
By using a radio‐frequency sputtering method, we synthesized large‐area, uniform, and transparent molybdenum disulfide film electrodes (1, 3, 5, and 7 min) on transparent and conducting fluorine‐doped tin oxide (FTO), as ecofriendly, cost‐effective counter electrodes (CE) for dye‐sensitized solar cells (DSSCs). These CEs were used in place of the routinely used expensive platinum CEs for the catalytic reduction of a triiodide electrolyte. The structure and morphology of the MoS2 was analyzed by using Raman spectroscopy, X‐ray diffraction, and X‐ray photoemission spectroscopy measurements and the DSSC characteristics were investigated. An unbroken film of MoS2 was identified on the FTO crystallites from field‐emission scanning electron microscopy. Cyclic voltammetry, electrochemical impedance spectroscopy, and Tafel curve measurements reveal the promise of MoS2 as a CE with a low charge‐transfer resistance, high electrocatalytic activity, and fast reaction kinetics for the reduction of triiodide to iodide. Finally, an optimized transparent MoS2 CE, obtained after 5 min synthesis time, showed a high power‐conversion efficiency of 6.0 %, which comparable to the performance obtained with a Pt CE (6.6 %) when used in TiO2‐based DSCCs, thus signifying the importance of sputtering time on DSSC performance. 相似文献
249.
Single‐Step Exfoliation and Covalent Functionalization of MoS2 Nanosheets by an Organosulfur Reaction
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Ricardo H. Gonçalves Rodrigo Fiel Mario R. S. Soares Prof. Dr. Wido H. Schreiner Prof. Dr. Caio M. P. Silva Prof. Dr. Edson R. Leite 《Chemistry (Weinheim an der Bergstrasse, Germany)》2015,21(44):15583-15588
A simple approach to exfoliate and functionalize MoS2 in a single‐step is described, which combines the dispersion of MoS2 in polybutadiene solution and ultrasonication processes. The great advantage of this process is that a colloidal stability of MoS2 in nonpolar solvent is achieved by chemically bonding polybutadiene on the perimeter edge sites of MoS2 sheets. In addition, elastomeric nanocomposite has been prepared with singular mechanical properties using functionalized MoS2 as nanofiller in a polybutadiene matrix with a subsequent vulcanization reaction. 相似文献
250.
MoS_2-Au共溅膜的结构与性能之研究 总被引:1,自引:0,他引:1
作者利用扫描电子显微镜(SEM)、X-射线衍射仪(XRD),俄歇电子能谱仪(AES)和X—射线光电子能谱仪(XPS)等对MoS_2-Au共溅膜的形貌和结构进行了观察与分析,并就这种膜的厚度对耐磨寿命的影响及其抗湿性与MoS_2溅射膜的作了比较,认为共溅膜的柱状聚集体结构是其具有良好性能的原因。溅射时氩气压强对MoS_2-Au膜结构和性能影响的研究结果表明,不同氩气压强下得到的MoS_2之结晶度不同,因而共溅膜的摩擦学性能也不相同。作者还就膜与底材的结合强度同耐磨寿命的关系,以及底材表面缺陷对膜结构的影响进行了讨论。 相似文献