MoS_2纳米片及其增强环氧树脂基复合材料的制备与性能研究

以液相分散法为基础制备了MoS2纳米片悬浮液.对该悬浮液进行了吸光性能和荧光性能表征;结果显示悬浮液荧光信号明显增强;同时得到增加超声时间、降低离心转速、采用粒径较大的块状粉末和加入球磨工艺这些因素是可以提高悬浮液的吸光度的优化工艺条件.采用微区荧光测试测得了单个MoS2纳米片的荧光光谱,其主峰位置在652 nm,对应的带隙能量是1.9 e V;还对单个纳米片进行退火处理,其荧光信号在退火后有所增强.对MoS2纳米片进行了AFM和SEM表征显示大部分纳米片的平面尺寸在几百纳米,厚度约为几纳米.另外,将MoS2纳米片悬浮液与E51环氧树脂混合,制备了MoS2纳米片增强环氧树脂基复合材料.对该复合材料进行了荧光性能和拉伸性能测试.结果显示复合材料的荧光信号也明显增强;且经退火后,因为复合材料内部残余热应力的关系,该复合材料的荧光信号的峰值位置出现移动.同时,该复合材料的韧性也有提升.     

Controlled Covalent Functionalization of 2 H-MoS2 with Molecular or Polymeric Adlayers

Most air-stable 2D materials are relatively inert, which makes their chemical modification difficult. In particular, in the case of MoS₂, the semiconducting 2 H-MoS₂ is much less reactive than its metallic counterpart, 1T-MoS₂. As a consequence, there are hardly any reliable methods for the covalent modification of 2 H-MoS₂. An ideal method for the chemical functionalization of such materials should be both mild, not requiring the introduction of a large number of defects, and versatile, allowing for the decoration with as many different functional groups as possible. Herein, a comprehensive study on the covalent functionalization of 2 H-MoS₂ with maleimides is presented. The use of a base (Et₃N) leads to the in situ formation of a succinimide polymer layer, covalently connected to MoS₂. In contrast, in the absence of base, functionalization stops at the molecular level. Moreover, the functionalization protocol is mild (occurs at room temperature), fast (nearly complete in 1 h), and very flexible (11 different solvents and 10 different maleimides tested). In practical terms, the procedures described here allow for the chemist to manipulate 2 H-MoS₂ in a very flexible way, decorating it with polymers or molecules, and with a wide range of functional groups for subsequent modification. Conceptually, the spurious formation of an organic polymer might be general to other methods of functionalization of 2D materials, where a large excess of molecular reagents is typically used.     

The antioxygen radiation properties of the nanocomposite film consisted of hydrogenated amorphous carbon (a-C:H) and MoS2

MoS₂/a-C:H multilayer film and MoS₂/a-C:H composite film exhibit excellent tribological properties in vacuum, which can be used as the potential space lubricant. The radiation-protective properties of these two films in atomic oxygen (AO) are evaluated. The influences of AO radiation on structure, morphology, and tribological properties of the films were investigated. The results show that AO radiation mainly causes oxidation and increases sp² C content in both of the films. Furthermore, the MoS₂ sublayer on the surface of the multilayer film is oxidized heavily, whereas both the MoS₂ and the a-C:H matrix on the surface were oxidized in the composite film. As a result of this, the multilayer film exhibits high friction coefficient and short sliding lifetime in vacuum after AO radiation. Compared with that, the composite film exhibits lower friction and longer sliding time more than 3600 seconds in vacuum, which illustrates it has a good AO radiation protection. This indicates that MoS₂/a-C:H composite film is more likely to be used as a potential space lubricant.     

Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

The interfacial properties of MoS₂/4H-SiC heterostructures were studied by combining first-principles calculations and X-ray photoelectron spectroscopy. Experimental (theoretical) valence band offsets (VBOs) increase from 1.49 (1.46) to 2.19 (2.36) eV with increasing MoS₂ monolayer (1L) up to 4 layers (4L). A strong interlayer interaction was revealed at 1L MoS₂/SiC interface. Fermi level pinning and totally surface passivation were realized for 4H-SiC (0001) surface. About 0.96e per unit cell transferring forms an electric field from SiC to MoS₂. Then, 1L MoS₂/SiC interface exhibits type I band alignment with the asymmetric conduction band offset (CBO) and VBO. For 2L and 4L MoS₂/SiC, Fermi level was just pinning at the lower MoS₂ 1L. The interaction keeps weak vdW interaction between upper and lower MoS₂ layers. They exhibit the type II band alignments and the enlarged CBOs and VBOs, which is attributed to weak vdW interaction and strong interlayer orbital coupling in the multilayer MoS₂. High efficiency of charge separation will emerge due to the asymmetric band alignment and built-in electric field for all the MoS₂/SiC interfaces. The multiple interfacial interactions provide a new modulated perspective for the next-generation electronics and optoelectronics based on the 2D/3D semiconductors heterojunctions.     

MoS2/GQDs催化剂的制备及微生物电解池的产氢性能研究

通过水热法合成了一系列MoS₂/GQDs复合材料,并制成碳基复合电极。利用电化学测试手段挑选出最佳电极后用于微生物电解池（MEC）阴极的产氢性能研究。实验结果显示： Na₂MoO₄、半胱氨酸和GQDs的最佳原料配比为375:600:1,制备出的MoS₂/GQDs呈现明显的爆米花样纳米片结构,片层厚度在10 nm左右,当碳纸负载量为1.5 mg·cm^-2时,MoS₂/GQDs碳纸电极的析氢催化能力最佳。在MEC产氢实验中,MoS₂/GQDs阴极MEC的产气量、氢气产率、库仑效率、整体氢气回收率、阴极氢气回收率、电能回收率和整体能量回收率分别为51.15±3.15 mL·cycle^-1、0.401±0.032 m³H₂·m³d^-1、91.16±0.054%、66.64±5.39%、72.44±2.60%、217.26±7.42%和77.37±1.50%,均略高于Pt/C阴极MEC或与之媲美。另外,MoS₂/GQDs具有良好的长期稳定性,且价格便宜,有利于实际应用。     

基于MoS2/氮掺杂石墨烯纳米复合材料灵敏电化学传感器检测镉(II)

基于S-Cd和N-Cd的亲和作用,利用一锅法制备了MoS2-掺氮石墨烯(NG)新型纳米复合材料。采用方波溶出伏安法实现了Cd²⁺的灵敏测定。在最优实验条件下,Cd²⁺的溶出峰电流与Cd²⁺的浓度在0.01~20μmol/L范围内呈线性关系(R²=0.996),检出限为2.50 nmol/L。该传感器可用于监测实际样品中Cd²⁺。     

High‐Performance Platinum‐Free Dye‐Sensitized Solar Cells with Molybdenum Disulfide Films as Counter Electrodes

By using a radio‐frequency sputtering method, we synthesized large‐area, uniform, and transparent molybdenum disulfide film electrodes (1, 3, 5, and 7 min) on transparent and conducting fluorine‐doped tin oxide (FTO), as ecofriendly, cost‐effective counter electrodes (CE) for dye‐sensitized solar cells (DSSCs). These CEs were used in place of the routinely used expensive platinum CEs for the catalytic reduction of a triiodide electrolyte. The structure and morphology of the MoS₂ was analyzed by using Raman spectroscopy, X‐ray diffraction, and X‐ray photoemission spectroscopy measurements and the DSSC characteristics were investigated. An unbroken film of MoS₂ was identified on the FTO crystallites from field‐emission scanning electron microscopy. Cyclic voltammetry, electrochemical impedance spectroscopy, and Tafel curve measurements reveal the promise of MoS₂ as a CE with a low charge‐transfer resistance, high electrocatalytic activity, and fast reaction kinetics for the reduction of triiodide to iodide. Finally, an optimized transparent MoS₂ CE, obtained after 5 min synthesis time, showed a high power‐conversion efficiency of 6.0 %, which comparable to the performance obtained with a Pt CE (6.6 %) when used in TiO₂‐based DSCCs, thus signifying the importance of sputtering time on DSSC performance.     

Single‐Step Exfoliation and Covalent Functionalization of MoS2 Nanosheets by an Organosulfur Reaction

A simple approach to exfoliate and functionalize MoS₂ in a single‐step is described, which combines the dispersion of MoS₂ in polybutadiene solution and ultrasonication processes. The great advantage of this process is that a colloidal stability of MoS₂ in nonpolar solvent is achieved by chemically bonding polybutadiene on the perimeter edge sites of MoS₂ sheets. In addition, elastomeric nanocomposite has been prepared with singular mechanical properties using functionalized MoS₂ as nanofiller in a polybutadiene matrix with a subsequent vulcanization reaction.     

MoS_2-Au共溅膜的结构与性能之研究

作者利用扫描电子显微镜(SEM)、X-射线衍射仪(XRD),俄歇电子能谱仪(AES)和X—射线光电子能谱仪(XPS)等对MoS_2-Au共溅膜的形貌和结构进行了观察与分析,并就这种膜的厚度对耐磨寿命的影响及其抗湿性与MoS_2溅射膜的作了比较,认为共溅膜的柱状聚集体结构是其具有良好性能的原因。溅射时氩气压强对MoS_2-Au膜结构和性能影响的研究结果表明,不同氩气压强下得到的MoS_2之结晶度不同,因而共溅膜的摩擦学性能也不相同。作者还就膜与底材的结合强度同耐磨寿命的关系,以及底材表面缺陷对膜结构的影响进行了讨论。