High‐Performance Sodium‐Ion Batteries and Sodium‐Ion Pseudocapacitors Based on MoS2/Graphene Composites

Sodium‐ion energy storage, including sodium‐ion batteries (NIBs) and electrochemical capacitive storage (NICs), is considered as a promising alternative to lithium‐ion energy storage. It is an intriguing prospect, especially for large‐scale applications, owing to its low cost and abundance. MoS₂ sodiation/desodiation with Na ions is based on the conversion reaction, which is not only able to deliver higher capacity than the intercalation reaction, but can also be applied in capacitive storage owing to its typically sloping charge/discharge curves. Here, NIBs and NICs based on a graphene composite (MoS₂/G) were constructed. The enlarged d‐spacing, a contribution of the graphene matrix, and the unique properties of the MoS₂/G substantially optimize Na storage behavior, by accommodating large volume changes and facilitating fast ion diffusion. MoS₂/G exhibits a stable capacity of approximately 350 mAh g^?1 over 200 cycles at 0.25 C in half cells, and delivers a capacitance of 50 F g^?1 over 2000 cycles at 1.5 C in pseudocapacitors with a wide voltage window of 0.1–2.5 V.     

Covalent Assembly of MoS2 Nanosheets with SnS Nanodots as Linkages for Lithium/Sodium-Ion Batteries

Weak van der Waals interactions between interlayers of two-dimensional layered materials result in disabled across-interlayer electron transfer and poor layered structural stability, seriously deteriorating their performance in energy applications. Herein, we propose a novel covalent assembly strategy for MoS₂ nanosheets to realize unique MoS₂/SnS hollow superassemblies (HSs) by using SnS nanodots as covalent linkages. The covalent assembly based on all-inorganic and carbon-free concept enables effective across-interlayer electron transfer, facilitated ion diffusion kinetics, and outstanding mechanical stability, which are evidenced by experimental characterization, DFT calculations, and mechanical simulations. Consequently, the MoS₂/SnS HSs exhibit superb rate performance and long cycling stability in lithium-ion batteries, representing the best comprehensive performance in carbon-free MoS₂-based anodes to date. Moreover, the MoS₂/SnS HSs also show excellent sodium storage performance in sodium-ion batteries.     

Structure of MoS2-based catalysts for hydrodesulfurization prepared via exfoliation

The structure distortions of the bend type are shown to be a reason of the lower coordination numbers for the MoS₂ based catalysts for hydrodesulfurization.     

How to find an optimum cluster size through topological site properties: MoSxmodel clusters

Computational investigations in catalysis frequently use model clusters to represent realistically the catalyst and its reaction sites. Detailed knowledge of the molecular charge, thus electronic density, of a cluster would then allow physical and chemical insights of properties and can provide a procedure to establish their optimum size for catalyst studies. For this purpose, an approach is suggested to study model clusters based on the distributed multipole analysis (DMA) of molecular charge properties. After full density functional theory (DFT) geometry optimization of each cluster, DMA computed from the converged DFT one‐electron density matrix allowed the partition of the corresponding cluster charge distribution into monopole, dipole, and quadrupole moments on the atomic sites. The procedure was applied to MoS₂ model clusters Mo₁₀S₁₈, Mo₁₂S₂₆, Mo₁₆S₃₂, Mo₂₃S₄₈, and Mo₂₇S₅₄. This analysis provided detailed features of the charge distribution of each cluster, focused on the 101 0 (Mo or metallic edge) and 1 010 (sulfur edge) active planes. Properties of the Mo₂₇S₅₄ cluster, including the formation of HDS active surfaces, were extensively discussed. The effect of cluster size on the site charge distribution properties of both planes was evaluated. The results showed that the Mo₁₆S₃₂ cluster can adequately model both active planes of real size Mo₂₇S₅₄. These results can guide future computational studies of MoS₂ catalytic processes. Furthermore, this approach is of general applicability. © 2011 Wiley Periodicals, Inc. J Comput Chem, 2011     

基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结

MoS₂是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS₂是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS₂的方法,并通过引入WO₃粉末生长出了二硫化钼与二硫化钨的横向异质结(WS₂-MoS₂).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.     

Enhanced photoluminescence of monolayer MoS2 on stepped gold structure

Different MoS₂/Au heterostructures can play an important role in tuning the photoluminescence (PL) and optoelectrical properties of monolayer MoS₂. Previous studies of PL of MoS₂/Au heterostructures were mainly limited to the PL enhancement by using different Au nanostructures and PL quenching of monolayer MoS₂ on flat Au surfaces. Here, we demonstrate the enhanced excitonic PL emissions of monolayer MoS₂/Au heterostructures on Si/SiO₂ substrates. By transferring the continuous monolayer MoS₂ onto a stepped Au structure consisting of 60-nm and 100-nm Au films, the MoS₂/Au-60 and MoS₂/Au-100 heterostructures exhibit enhanced PL emissions, each with a blue-shifted PL peak in comparison with the MoS₂/SiO₂. Furthermore, the PL intensity of MoS₂/Au-60 is about twice larger than that of MoS₂/Au-100. The different enhanced excitonic PL emissions in MoS₂/Au heterostructures can be attributed to the different charge transfer effects modified by the stepped Au structure. This work may provide an insight into the excitonic PL and charge transfer effect of MoS₂ on Au film and yield novel phenomena in MoS₂/Au heterostructures for further study of PL tuning and optoelectrical properties.     

Novel mixed–solvothermal synthesis of MoS2 nanosheets with controllable morphologies

MoS₂ nanosheets with controllable morphologies were successfully synthesized via a novel mixed–solvothermal approach based on interfusing organic solvent in the solution. The morphology of the MoS₂ nanosheets was lamellar–like using the mixed water/ethanol/N–Methyl pyrrolidone solvents, whereas that prepared with the mixed water/ethano/ethylene glycol solvents changes to fullerene–like. Because of the structure‐directing ability of organic molecules, the mixed solvents were proposed to be responsible for the formation of such different morphologies. The average size of MoS₂ nanosheets was approximately 90 nm, and the thickness was about 10–20 nm. The results indicated that the crystalline phase and morphology were largely influenced by calcination and reaction system.     

二维辉钼材料及器件研究进展

经过几十年的发展, 集成电路的特征尺寸将在10–15年内达到其物理极限, 替代材料的研究迫在眉睫. 石墨烯曾被寄予厚望, 但由于其缺乏带隙限制了在数字电路领域的应用. 近年来, 单层及多层辉钼材料由于具有优异的半导体性能, 有可能超过石墨烯成为硅的替代者而引起了微纳电子领域的广泛关注. 本文对近二年国际上辉钼半导体器件研制、辉钼半导体材料的性能 表征及制备方法研究等方面的进展进行了综述, 并对大面积单层材料的研制提出了值得关注的方向. 关键词： 2')" href="#">MoS₂ 辉钼材料 纳米材料 集成电路     

La,Ce,Nd掺杂对单层MoS_2电子结构的影响

为了研究稀土掺杂对单层MoS2电子结构的影响,文章基于密度泛函理论框架下的第一性原理,采用平面波赝势方法分别计算了本征及La,Ce,Nd掺杂单层MoS2的晶格参数、能带结构、态密度和差分电荷密度.计算发现,稀土掺杂所引起的晶格畸变与杂质原子的共价半径大小有关,La杂质附近的键长变化最大,Nd杂质附近的键长变化最小.能带结构分析表明,La掺杂可以在MoS2的禁带中引入3个能级,Ce掺杂可以形成6个新能级,Nd掺杂可以形成4个能级,并对杂质能级属性进行了初步分析.差分电荷密度分布显示,稀土掺杂可以使单层MoS2中的电子分布发生改变,尤其是f电子的存在会使差分电荷密度呈现出反差极大的物理图象.     

Te掺杂单层MoS2的电子结构与光电性质

采用基于密度泛函理论的第一性原理计算,研究了Te掺杂对单层MoS₂能带结构、电子态密度和光电性质的影响。结果表明,本征单层MoS₂属于直接带隙半导体材料,其禁带宽度为1.64 eV。本征单层MoS₂的价带顶主要由S-3p态电子和Mo-4d态电子构成,而其导带底则主要由Mo-4d态电子和S-3p态电子共同决定;Te掺杂单层MoS₂为间接带隙半导体材料,其禁带宽度为1.47 eV。同时通过Te掺杂,使单层MoS₂的静态介电常数增大,禁带宽度变窄,吸收光谱产生红移,研究结果为单层MoS₂在光电器件方面的应用提供了理论基础。