High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response

Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.     

Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation

Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS₂/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.     

Au的金属颗粒对二硫化钼发光增强

二硫化钼(MoS₂)是一种层状的二维过渡金属硫族化合物材料,从块体到单层,禁带由间接带隙变为直接带隙,由于通常机械剥落的单层MoS₂是n型掺杂的,使得其发光效率仍然很低. 在本文中,采用匀胶机旋涂的方法将共振吸收峰在514 nm附近的纳米金颗粒尽可能均匀的铺在单层、双层以及多层的MoS₂样品表面,发现单层和双层样品的光致发光谱(PL谱)分别增强了约30倍和2倍同时伴随着峰位的蓝移,而多层样品的发光强度也略有增强. 拉曼特性揭示了纳米金颗粒对单层和双层MoS₂样品产生了明显的p型掺杂,从而增强了发光;同时纳米金颗粒的表面等离子激元效应对激发光的天线作用也是增强MoS₂的光致发光的一个因素. 关键词： 二硫化钼 光致发光 p型掺杂 Au纳米颗粒     

DV-Xα方法与电子光谱解析

本文介绍了第一原理量子化学DV Xα方法在电子光谱的理论计算方面的应用。在三个例子中分别详细讨论了过渡金属原子簇的紫外 可见吸收谱V/UV、X 射线光电子能谱XPS、和XANES的计算 ,应用于MoS4原子簇结构、Cu2 O/Cu表面与 2 氨基嘧啶相互作用模型、和MoS2 导带底部结构分析。根据在不同光谱分析的特点 ,采用相应的计算方案。电子光谱的解析除了在解释光谱现象外 ,能够进一步帮助了解分子或原子簇的结构。     

单层MoS_2表面吸附Ag_6团簇电子结构的第一性原理计算

本文运用第一性原理研究了单层MoS_2在S位吸附Ag_6团簇的稳定性、能带结构和态密度.结果表明,Ag_6团簇在S位单点位吸附的稳定性强于双点位吸附、三点位吸附;其中吸附体系禁带中产生了2条杂质能级,原因在于Ag原子与S形成共价键下的施主能级与受主能级;Ag_6团簇在单层MoS_2的吸附导致态密度峰值在费米能级处发生劈裂,说明Ag_6团簇的吸附会增强单层MoS_2的光电特性;单层MoS_2的能带结构可以通过表面吸附Ag_6团簇以及金属团簇进行调控;在实际的生产应用中依据不同的金属团簇吸附于单层MoS_2表面得到需要的的半导体器件.     

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

The transfer characteristics (I_D–V_G) of multilayers MoS₂ transistors with a SiO₂/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (T_ann from 150 °C to 200 °C) under a positive bias ramp (V_G from 0 V to +20 V). Larger T_ann resulted in a reduced hysteresis of the I_D–V_G curves (from ～11 V in the as‐prepared sample to ～2.5 V after T_ann at 200 °C). The field effect mobility (～30 cm² V^–1 s^–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS₂ contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ～9 × 10¹¹ eV^–1cm^–2in the as‐prepared device to ～2 × 10¹¹ eV^–1cm^–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.

Schematic representation of a back‐gated multilayer MoS₂ field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V.     

一种简单的化学气相沉积法制备大尺寸单层二硫化钼

最近单层二硫化钼以其直接带隙的性质及在电子器件、催化、光电等领域中的潜在应用而备受关注.化学气相沉积法能够制备出高质量、大尺寸且性能优良的单层二硫化钼,但其制备工艺比较复杂.本文采用简化的化学气相沉积法在蓝宝石衬底上制备出了大尺寸的单晶二硫化钼.清洗衬底时,只需要简单的清洁,不需要用丙酮、食人鱼溶液(H_2SO_4/H_2O_2=3:1)等处理,这样既减少了操作步骤,又避免了潜在的危险.升温时直接从室温加热到生长的温度,不必分段升温,并且采用常压化学气相沉积法,不需要抽真空等过程,使得实验可以快捷方便地进行.光学显微镜、拉曼光谱和光致发光谱的结果表明,生长的二硫化钼为规则的三角形单层,边长为50μm左右,远大于机械剥离的样品.     

Controlled Formation of TiO2/MoS2 Core–Shell Heterostructures with Enhanced Visible‐Light Photocatalytic Activities

Most recently, much attention has been devoted to photocatalytic materials that may help to solve the global energy crisis and may provide environmental protection. Herein, novel cocatalysts based on few layered MoS₂ and TiO₂ nanomaterials have been designed by growing MoS₂ nanosheets on the surface of TiO₂ nanospheres through a facile hydrothermal method. The method allows the formation of TiO₂/MoS₂ core–shell heterostructures of uniform morphologies and stable structure and provides a good control over shell thickness. The mechanism that forms these heterostructures is discussed in detail. In addition, as cocatalyst, MoS₂ nanosheets can enlarge the light harvesting window to include visible light and improve the photocatalytic ability of TiO₂. Using Rhodamine B as the model, the resultant heterostructure is demonstrated to possess excellent and stable photocatalytic activity in the degradation of organic pollutants under visible light illumination. The TiO₂/MoS₂ heterostructures possess this catalytic activity due to their large surface area and their excellent interface for separating holes and electrons. Therefore, this novel heterostructure nanomaterials possess potential applications in water treatment, degradation of dye pollutants, and environmental cleaning.     

Structure of van der Waals bound hybrids of organic semiconductors and transition metal dichalcogenides: the case of acene films on MoS2

Transition metal dichalcogenides (TMDC) are important representatives in the emerging field of two‐dimensional materials. At present their combination with molecular films is discussed as it enables the realization of van der Waals bound organic/inorganic hybrids which are of interest in future device architectures. Here, we discuss the potential use of molybdenum disulfide (MoS₂) as supporting substrate for the growth of well‐defined, crystalline organic adlayers. By this means, hybrid systems between the TMDC surface and organic compounds can be prepared, allowing for the profound investigation of mutual optical and electronic coupling mechanisms. As model system, we choose pentacene and perfluoropentacene as prototypical organic semiconductors and analyze their film formation on MoS₂(001) surfaces. In both cases, we observe smooth, crystalline film growth in lying molecular configuration, hence enabling the preparation of well‐defined hybrid systems. By contrast, on defective MoS₂ surfaces both materials adopt an upright molecular orientation and exhibit distinctly different film morphologies. This emphasizes the importance of highly ordered TMDC surfaces with low defect density for the fabrication of well‐defined hybrid systems.     

Nano‐sensor Based on MoS2 Nanosheet mixed with Au quantum dot: Role of Layer Number and Temperature

The performance of nano‐sensor based on MoS₂ nanosheet mixed with Au particle is tested based electrochemical test involving cyclic voltammogram and impedance spectroscopy, where the Fe^III(CN)₆^3?/Fe^II(CN)₆^4? and dopamine (DA) are chosen as research object to verify the role of layer number of MoS₂ nanosheet and the temperature. The electrochemical test shows the Au nanoparticle would improve the electron exchange reaction occurring on the electrode. In the solution of Fe^III(CN)₆^3?/Fe^II(CN)₆^4?, the electrode reaction follows , where increasing the layer number of MoS₂ nanosheet would restrict the reaction. In the DA system, the reaction of occurs on the electrode and increasing the layer number of MoS₂ nanosheet would facilitate the reaction. The difference as mentioned above is assigned to the energy level shift originated from variance of layer number of MoS₂ nanosheet and the changing of reaction mechanism. In addition, temperature would mainly facilitate the kinetics of electron exchange reaction, which is assigned to the diffusion acceleration of DA molecule. Simultaneously, the desorption process of reactant in the electrolyte would enhance. The role of layer number of MoS₂ nanosheet and the temperature is clarified with the thermodynamic and kinetic properties of electron exchange reaction based on MoS₂ nanosheet, which would improve the understanding of nano‐sensor based on MoS₂ nanosheet.