Fracture of a rectangular piezoelectromagnetic body

The singular stress, electric fields and magnetic fields in a rectangular piezoelectromagnetic body containing a center Griffith crack under longitudinal shear are obtained. Fourier transforms and Fourier sine series are used to reduce the mixed boundary value problems of the crack, which is assumed to be impermeable, to dual integral equations. The solution of the dual integral equations is then expressed in terms of Fredholm integral equations of the second kind. Expressions for stresses, electric displacements and magnetic inductions in the vicinity of the crack tip are derived. Also obtained are the field intensity factors and the energy release rates. Numerical results obtained show that the geometry of the rectangular body have significant influence on the field intensity factors and the energy release rates.     

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×10⁹ cm^-2 to 5.10×10⁸ cm^-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.     

Periodic cracks in a functionally graded piezoelectric layer bonded to a piezoelectric half-plane

Studied is the problem of a periodic array of cracks in a functionally graded piezoelectric strip bonded to a homogeneous piezoelectric material. The properties of the functionally graded piezoelectric strip, such as elastic modulus, piezoelectric constant and dielectric constant, are assumed in exponential forms and vary along the crack direction. The crack surface condition is assumed to be electrically impermeable or permeable. Integral transform and dislocation density functions are employed to reduce the problem to the solution of a system of singular integral equations. The effects of the periodic crack spacing, material constants and the geometry parameters on the stress intensity factor, the energy release ratio and the energy density factor are studied.     

C18 functionalized graphene oxide as a novel coating for solid-phase microextraction

A novel C18 functionalized graphene oxide (GO) coated solid-phase microextraction fiber was prepared by a novel protocol. Based on the strong van der Waals interaction present in GO and abundant oxygenous groups in GO sheets, a simple layer-by-layer self-assembly method was used in the preparation process and then C18 was successfully self-assembled on GO via C-O-Si bonding. Coupled with gas chromatography, extraction performance of the fiber was tested with polycyclic aromatic hydrocarbons (PAHs) as model analytes. The fiber not only exhibited excellent extraction efficiency and selectivity, but also showed many advantages including high rigidity, long service life and well stability toward organic solvent, acidic and alkali solutions, and high temperature. The relative standard deviations for single-fiber repeatability and fiber-to-fiber reproducibility were less than 7.26 and 17.25%, respectively. The detection limits to the PAHs were less than 0.08 μg L(-1) and the calibration curves were linear in a wide range for all analytes. The as-established Solid-phase microextraction GC method was also successfully used for determination of PAHs in two real water samples.     

Analysis of dislocation nucleation from a crystal surface based on the Peierls-Nabarro dislocation model

Dislocation nucleation from a stressed crystal surface is analyzed based on the Peierls-Nabarro dislocation model. The variational boundary integral approach is used to obtain the profiles of the embryonic dislocations in various three-dimensional nucleation configurations. The stress-dependent activation energies required to activate dislocations from their stable to unstable saddle point configurations are determined. Compared to previous analyses of this type of problem based on continuum elastic dislocation theory, the present analysis eliminates the uncertain core cutoff parameter by allowing for the existence of an extended dislocation core as the embryonic dislocation evolves. Moreover, atomic information can be incorporated to reveal the dependence of the nucleation process on the profile of the atomic interlayer potential as compared to continuum elastic dislocation theory in which only elastic constants and Burgers vector are relevant. Finally, the presented methodology can also be readily used to study dislocation nucleation from the surface heterogeneities such as cracks, steps, and quantum structures of electronic devices.     

Microwave-assisted one-pot three-component polymerization of alkynes,aldehydes and amines toward amino-functionalized optoelectronic polymers

We present a microwave-assisted one-pot polymerization with three-components of alkynes, aldehydes and amines for the synthesis of new amino-functionalized optoelectronic polymers. The polymerization of diynes(1a-1c), dialdehydes(2a and 2b) and dibenzylamine catalyzed by InCl_3 was carried out smoothly within 1h under microwave radiation, yielding four soluble polymers with high molecular weights. The resulting polymers P1 and P2 could be easily dissolved in alcohol and thus utilized as the cathode interlayer for polymer solar cells(PSCs). Compared with the control device, the PSCs with P1 and P2 as the cathode interlayer and PTB7-Th:PC_(71)BM as the photoactive layer exhibited significantly higher power conversion efficiencies(PCEs) of 9.49% and 9.16%, respectively. These results suggest that this polycoupling reaction is an efficient approach to construct three-component polymers for the practical applications.     

Degradation of the Giant Magnetoresistance in Fe/Cr Multilayers Due to Ar-Ion Beam Mixing

The influence of 200 keV Ar-ion irradiation on the interlayer coupling in the Fe/Cr multilayer system exhibiting the giant magnetoresistance effect (GMR) is studied by conversion electron Mössbauer spectroscopy (CEMS), VSM hysteresis loops, magnetoresistivity and electric resistivity measurements and supplemented by the small-angle X-ray diffraction (SAXRD). The increase of Ar ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step-sites detected by CEMS as a result of which the GMR gradually decreases and vanishes at doses exceeding 1×10¹⁴ Ar/cm². A degradation of GMR with increasing Ar-ion dose is related to the formation of pinholes between Fe layers and the decrease of the antiferromagnetically coupled fraction.

     

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.