高功率脉冲激光对阶跃折射率多模光纤损伤机理

 理论分析和模拟仿真研究了激光点火系统中光纤端面损伤、光纤初始输入段损伤和光纤内部损伤机理。结果显示：端面损伤主要是由光纤端面的杂质和缺陷引起；光纤初始输入段损伤是由光束的初次反射造成光纤局部激光能量密度增大引起的；光纤内部体损伤主要由于激光自聚焦效应引起损伤和光纤受到的意外应力产生微小碎片，吸收激光能量，引起光纤局部损伤。给出了激光点火系统中提高光纤损伤阈值的一般方法，主要包括光纤端面处理、设计合理的激光注入耦合装置。     

第四讲 超强激光脉冲与等离子体相互作用中高能离子的产生

近几年来，由于高功率激光技术的不断发展，利用超强激光脉冲与等离子体相互作用产生高能离子束的研究得到了极大推动．实验和理论模拟均发现，在超强激光脉冲与等离子体相互作用过程中，可以产生高亮度、小尺寸、方向性好的高能质子束和高能重离子束．这种基于超强激光的高能离子源在先进离子束成像技术、惯性约束聚变混合“快点火”、新型台面离子加速器以及医疗等方面都有很诱人的应用前景．文章主要介绍了超强激光与固体靶相互作用中高能离子束（尤其是质子束）的加速机制、高能离子束特性、常用测量方法及其潜在应用，并对最新的研究进展进行了简单介绍．     

Direct alpha spectrometry for characterising hot particle properties

Non-destructive analysis methods, especially direct alpha spectrometry but also gamma ray spectrometry and scanning electron microscopy were applied to a nuclear bomb particle from the Thule accident. The use of high-resolution direct alpha spectrometry with the aid of Monte Carlo simulations was demonstrated here in order to determine the properties of this particle. In general, the information that can be obtained through direct alpha spectrometry depends on the information available a priori. For example, known elemental composition makes the assessment of particle dimensions possible even if scanning electron microscopy images are unavailable. Although direct alpha spectrometry may be applied for particle characterisation, further developments in spectrum analysis tools are necessary.     

高频ECR离子源的最新进展

As they are first optimized for their ion losses,ECRISs are always under a fundamental compromise: having high losses and strong confinement at the same time.To help ECR ion source developers in the design or improvement of existing machines,general comments are presented in a review article being soon published. In this 160 pages contribution,fundamental aspects of ECRISs are presented,with a discussion of electron temperature and confinement and ion confinement.Then,as microwaves play a key role in these machines, a chapter presents major guidelines for microwave launching and coupling to ECR plasma.Moreover,once ECR plasma is created,understanding this plasma is important in ion sourcery;and a section is dedicated to plasma diagnostics with an emphasis on the determination of electron and ion density and temperature by vacuum ultraviolet(VUV)spectroscopy.Another chapter deals with the role of magnetic confinement and presents updated scaling laws.Next chapter presents different types of ECRISs designed according to the main parameters previously described.Finally,some industrial applications of ECRISs and ECR plasmas in general are presented like ion implantation and photon lithography.Some hints taken from this review article are presented in the following article.     

Escape factors in spherically symmetric plasmas

In this paper we present explicit formulas for the escape factors of strong spectral lines in spherical-symmetric plasmas. The plasma does not necessarily have a homogeneous density. The calculations include two new elements: the first incorporates an accurate calculation of the angle-averaged areal density of ions from any internal point to the edge of the sphere. The second is the use of a saddle point method to carry out the integration over the line profile. Approximate expressions for the asymptotic behavior of the escape factor are given for Gaussian, Lorentzian and Holtsmarkian line shapes.     

Hot embossing of PTFE: Towards superhydrophobic surfaces

Three types of reusable stamps with features in the form of 2D arrays of pits having lateral dimensions in the range of 2-80 μm and heights of 1.5-15 μm were successfully employed for the hot embossing of PTFE at temperatures up to 50 °C above the glass transition temperature of PTFE amorphous phase. Due to the softening of PTFE at the temperatures used in this study, we were able to decrease imprint pressure significantly when comparing with the imprint conditions reported by other authors. Impact of the imprint temperature, pressure and time on the fidelity of pattern transfer as well as on water repellency was tested. The best results of embossing were achieved by applying pressure of 10 kg/cm² for 2 min at 170 °C. In this case, flattening of a natural PTFE roughness and pretty accurate deep replicas of the stamp patterns were observable on the whole imprinted area. Improvement in water repellency was largest for the samples imprinted by Ni stamp patterned with a 2D array of 2 μm square pits spaced by the same dimension and having a depth of 1.5 μm. Cassie-Baxter wetting regime was observed for the deepest imprints with water contact angles up to the superhydrophobic limit.     

Surface texturing of polytetrafluoroethylene by hot embossing

In this study, hot embossing by reusable Ni mold with features in the form of rectangular diffraction gratings of 4 μm period was successfully employed for surface texturing of polytetrafluoroethylene (PTFE) film above the glass transition temperature of PTFE amorphous phase with the aim to enhance surface hydrophobicity. Imprint pressure was set to 0.5 MPa and it was at least tenfold lower than reported by other authors using cold stamping. Embossed gratings were clearly seen on the surface of all imprinted samples even after the annealing at 140 °C and aging for 1 month at room temperature. The best results were achieved when imprint temperature was 150 °C. Measurements of the water contact angle on imprinted PTFE surfaces have showed that increase of the average contact angle for the current test setup was 8°. Using imprint stamp with the more favorable features may lead to somewhat higher hydrophobicity.     

Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon

We have studied the dependence of hot electron scattering rate on temperature in n-GaAs/AlAs types I and II multiple quantum wells. For a sample with well width 37 Å, which is on the borderline between types I and II band alignment, the increase of the temperature in the range 6–80 K leads to the strong decrease of the hot electron scattering rate. We explain this result by ionization of donors and transfer of cold electrons from the Γ-valley of GaAs to the X-valley of AlAs.     

An electromagnetic wave propagation in a non-uniform plasma controlled by EIT

We investigate the conditions in which the propagation of an electromagnetic wave is changed from transparency to cutoff in a non-uniform plasma. The allowed frequency range of the driving wave is obtained for the case that the probe frequency is above the plasma frequency. The effect of the power of the driving field on the range is analyzed. Received 23 May 2001