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61.
《Physics letters. A》2020,384(31):126790
The molecular dynamics method is used to study the formation of the Al/graphene nanocomposite in the structural grains of different size under the action of internal stresses. The behavior of graphene sheets inside an individual structural grain as well as in the process of two Al grains containing graphene are joined is investigated. The motion of graphene films, starting from the middle of the aluminum matrix, ends with their location at the crystallite boundaries. Graphene moves in the Al matrix along closely packed planes. In this case, graphene sheets acquire curvature. An intergrowth of graphene sheets is also observed. A contact between two Al-C nanocrystallites through a graphene interlayer is created. The self-diffusion coefficients of atoms and the partial potential energies increased with decreasing nanocrystallite size. The angular distribution of the nearest geometric neighbors and the distribution of distances to the nearest neighbors are determined using the construction of Voronoi polyhedra. 相似文献
62.
Theoretical analysis of the velocity field, stress field and vortex sheet of generalized second order fluid with fractional anomalous diffusion 总被引:1,自引:0,他引:1
The velocity field of generalized second order fluid with fractional anomalous diiusion caused by a plate moving impulsively
in its own plane is investigated and the anomalous diffusion problems of the stress field and vortex sheet caused by this
process are studied. Many previous and classical results can be considered as particular cases of this paper, such as the
solutions of the fractional diffusion equations obtained by Wyss; the classical Rayleigh’s time-space similarity solution;
the relationship between stress field and velocity field obtained by Bagley and co-worker and Podlubny’s results on the fractional
motion equation of a plate. In addition, a lot of significant results also are obtained. For example, the necessary condition
for causing the vortex sheet is that the time fractional diffusion index β must be greater than that of generalized second
order fluid α; the establiihment of the vorticity distribution function depends on the time history of the velocity profile
at a given point, and the time history can be described by the fractional calculus. 相似文献
63.
设计了一种适用于带状电子束高功率微波源的宽通带收集极,在有效吸收束-波相互作用后的带状电子束的同时,保证了带状电子束高功率微波源的工作模式矩形波导TM11模式高效率地通过。研究结果表明:在13~27 GHz范围内,功率传输效率大于95%,这一宽通带特性使得该类型的收集极与带状电子束高功率微波源能够更好配合,显著提高了微波源的模拟优化和实验调试效率;TM11模式微波的传输效率对收集极厚度和长度等参数不敏感;该类型收集极结构具有良好的散热能力,在不加外部水冷装置的条件下,仅靠空气自然对流冷却和辐射冷却,可以承受电流3 kA、电压300 kV、脉冲宽度30 ns及重复频率50 Hz带状电子束的连续冲击。 相似文献
64.
《Current Applied Physics》2014,14(9):1176-1180
We demonstrated the improved performance of near UV (365 nm) InGaN/AlGaN-based LEDs using highly reflective Al-based p-type reflectors with graphene sheets as a diffusion barrier. The use of graphene sheets did not degrade the reflectance of ITO/Al contacts, viz. ∼81% at 365 nm. The ITO/graphene/Al contacts annealed at 300 °C exhibited better ohmic behavior with a specific contact resistance of 1.5 × 10−3 Ωcm2 than the ITO/Al contact (with 9.5 × 10−3 Ωcm2). Near UV LEDs fabricated with the ITO/graphene/Al contact annealed at 300 °C showed a 7.2% higher light output (at 0.1 W) than LEDs with the ITO/Al reflector annealed at 300 °C. The SIMS results exhibited that, unlike the ITO/graphene/Al, the ITO/Al contacts undergo a significant indiffusion of Al atoms toward the GaN after annealing. Furthermore, both Ga and Mg atoms were also more extensively outdiffused in the ITO/Al contacts after annealing. On the basis of the SIMS and electrical results, the possible explanations for the annealing-induced degradation of the ITO/Al contacts are described and discussed. 相似文献
65.
《Photonics and Nanostructures》2014,12(5):473-481
Electrodynamic properties of the graphene–magnetic semiconductor–graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene–semi-infinte magnetic semiconductor and graphene–magnetic semiconductor–graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene–magnetic semiconductor–graphene sandwich-structure by an external magnetic field has been shown. 相似文献
66.
提 要设 是定义在[0,1]上的随机过程X(t)的n个等距独立观察值,其中, 服从公共连续分布F;,服从公共连续分布 F*,F与F*不同;其中,是过程 X(t)的变点.用CUSUM及Brownian Sheet方法给出了检测变点τ位置的一个程序,并证明了所得结果是强相合的;同时也讨论了τ的假设检验和区间估计. 相似文献
67.
The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 μB, 2 μB, 1 μB and 0.99 μB magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices. 相似文献
68.
We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At , when the switching states are based on the chemical potential, and , the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology. 相似文献
69.
Numerical simulation on the operational characteristics of the pulsed inductive acceleration 总被引:2,自引:0,他引:2
To analyse the ionization and acceleration properties of an inductive plasma excited by a pulsed current flowing through the planar coil, the extended GLM formulations of the MHD (EGLM‐MHD) model, combined with the high‐temperature thermodynamic and transport model, is employed to simulate the characteristics of the flow. The two‐dimensional axisymmetric calculation captures the generation, growth, and acceleration of the current sheet, and the process is completed in the first half period. The sheet is mainly comprised of lower ionization level ions in the front and higher level ions at the back, and the density is one order higher than that of the residual plasma on the coil surface. As the abscissa value of the sheet is larger than the decoupling distance, a reversed flow emerges, generating a backward impulse, and the negative velocity can be more than 15 km/s at peak intensity B0 = 0.5 T. In the second 1/4 period, the magnetic field and current density distribute non‐linearly on the surface and regularly in the sheet, caused by the reversing of the changing rate of the magnetic field and the particles' radial diffusion. The results at different intensities show that, for the same coil size, the time at which the maximum velocity Vmax appears is advanced as the intensity increases, and Vmax can be greater than 20 km/s above 0.5 T. 相似文献
70.
近年来,石墨烯中电子的自旋相关输运引起了越来越多的关注.本论文应用转移矩阵的方法讨论了石墨烯中具有单个界面或者两个界面的结构中,受到自旋-轨道耦合作用和电势的共同影响下自旋相关的输运性质.对于单个界面结构,由于自旋-轨道耦合作用导致能级产生劈裂,在固定的入射能量下,电子在自旋-轨道耦合区域产生两种传播模式.在自旋-轨道耦合区域加了电势后,透射几率和模式临界角都会受到较大的影响.对于两个界面结构,粒子的透射几率不仅与入射角有关,还与自旋-轨道耦合区域的宽度和自旋进动长度有关,而电势对同自旋方向的传输几率以及自旋反转的几率都有影响,适当地选取系统的参数和电势的大小,可以控制出射的电子自旋方向,实验上可以用来设计自旋反转器或者或者自旋控制器. 相似文献