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51.
热线法测定气体导热系数实验的探讨与改进   总被引:4,自引:1,他引:3  
在准静态低气压下测量气体的热传导系数时,理论上在低压强范围内应得到Q^-1低-p^-1线性关系图象,但实验数据所绘出的图象出现明显的非线性.本文着重分析出现非线性的原因,并提出实验改进的方法。  相似文献   
52.
This paper describes a new capacitive structure of pressure sensor to increase simultaneously the sensitivity and the linearity of the transducer. This structure contains two capacitors which change in response to pressure, but in opposite senses. To increase even more the sensitivity of each capacitor, the pressure sensitive diaphragm carries a central boss. The optimal position and the length of the boss are also calculated. To cite this article: A. Ettouhami et al., C. R. Mecanique 332 (2004).  相似文献   
53.
Summary The potential of liquid chromatography-mass spectrometry (LC-MS) has been studied for the simultaneous determination of sixteen carbamate and organophosphorus pesticides in honeybees using a traditional sample preparation protocol based on acetone extraction and dichloromethane partitioning. The performances of both atmospheric pressure chemical ionization (APCI) and electrospray (ES) interfaces were compared. APCI offered better sensitivity and specificity for a higher range of pesticides. Limits of quantification were from 0.01 to 0.17 mg kg–1, at which recoveries obtained were between 64 and 93%, except for pirimicarb that was at 13%, with relative standard deviations ranging from 7 to 20%. Fenitrothion, fenoxycarb, methiocarb and phoxim were found in bees from Valencian Community beehives at concentrations between 0.03 and 3.75 mg kg–1.  相似文献   
54.
 采用同步辐射X光源和能散法,对CsBr粉末样品进行高压原位X光衍射实验。由金刚石对顶压砧高压装置(DAC)产生高压,用已知状态方程的Pt粉末作内标,由Pt的衍射数据确定样品压力,最高压力达64.4 GPa。实验结果表明:室温常压下原始CsBr样品是具有简单立方结构的晶体,其晶格常数α=0.428 5 nm。高压下CsBr的结构有所变化,在51.3~58.4 GPa的压力范围内,(110)线和(211)线发生劈裂,从而形成了四方相。  相似文献   
55.
 本文用超声相比较方法测定了高Tc超导体La1.85Sr0.15CuO4,La2CuO4和YBa2Cu3O7的纵波和横波声速,进而导出了它们的纵向模量、切变模量、杨氏模量、泊松比、德拜温度及定体比热。在La1.85Sr0.15CuO4样品上,还进行了压力实验,发现所有弹性模量都是随压强增加而增加。定体比热cV和泊松比σ在高压下则略有下降。德拜温度是随压强增加而增加的。  相似文献   
56.
Recent X-ray diffraction studies on α-quartz (SiO2) by Kingmaet al [1], have shown the occurrence of a reversible, crystalline-to-crystalline, phase transition just prior to amorphization at ≈ 21 GPa. This precursor transition has also been confirmed by our recent molecular dynamics simulation study [2]. In order to investigate the possibility of a similar behaviour in other isostructural compounds, which also undergo pressure induced amorphization, α-GeO2 and α-AlPO4 (berlinite form) were studied using energy dispersive X-ray diffraction. In either of these materials, no such phase transition is detected prior to amorphization. The onset of amorphization and its reversal is found to be time dependent in GeO2.  相似文献   
57.
A new flow electrical conductance instrument was constructed and tested on dilute NaCl solutions up to 458 K, and on more concentrated solutions (maximum 0.436 mol⋅kg−1) at 373 K. The results of the new instrument agreed with those of previous authors within the estimated experimental errors. The model of Bernard et al. (J. Phys. Chem. 96, 3833–3840 (1992), MSA) was found to represent the high-temperature results without introducing an ion-pairing equilibrium constant. The Fuoss–Hsia conductance equation as given by Fernandez-Prini was found to represent the dilute concentrations with Λ° (NaCl) as the only adjustable parameter. It was found that Λ° (NaCl) could be expressed as a function of solvent viscosity and density by using three parameters found by regression of literature results between 278.15 and 523 K. This equation along with the FHFP theory permits the equivalent conductivity of dilute sodium chloride solutions to be calculated within the accuracy of the existing experimental measurements.  相似文献   
58.
Epitaxial Ti0.97Co0.03O2:Sb0.01(TCO:Sb) films were deposited on R-Al2O3 (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10−6 Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×1022/cm3 at 300 K. On the other hand, films deposited at 4×10−4 Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×1021/cm3. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.  相似文献   
59.
The solubility and diffusion coefficient of carbon dioxide in intermediate‐moisture starch–water mixtures were determined both experimentally and theoretically at elevated pressures up to 16 MPa at 50 °C. A high‐pressure decay sorption system was assembled to measure the equilibrium CO2 mass uptake by the starch–water system. The experimentally measured solubilities accounted for the estimated swollen volume by Sanchez–Lacombe equation of state (S‐L EOS) were found to increase almost linearly with pressure, yielding 4.0 g CO2/g starch–water system at 16 MPa. Moreover, CO2 solubilities above 5 MPa displayed a solubility increase, which was not contributed by the water fraction in the starch–water mixture. The solubilities, however, showed no dependence on the degree of gelatinization (DG) of starch. The diffusion coefficient of CO2 was found to increase with concentration of dissolved CO2, which is pressure‐dependent, and decrease with increasing DG in the range of 50–100%. A free‐volume‐based diffusion model proposed by Areerat was employed to predict the CO2 diffusivity in terms of pressure, temperature, and the concentration of dissolved CO2. S‐L EOS was once more used to determine the specific free volume of the mixture system. The predicted diffusion coefficients showed to correlate well with the measured values for all starch–water mixtures. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 607–621, 2006  相似文献   
60.
Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO2 layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO2, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.  相似文献   
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