High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO₂ gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO₂ gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO₂ layer. With a 2 μm gate length, the saturated I_ds and maximum transconductance (G_m) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.     

Effect of annealing on structural and electrical properties of the Li–Mn–O thin films, prepared by high frequency RF magnetron sputtering

Li–Mn–O thin film cathode materials are prepared by high frequency (27.12 MHz) RF magnetron sputtering. The high RF frequency gives higher deposition rates without compromising on the quality of the films. This investigation focuses on the effects of post-annealing on the micro-structural, morphological and electrical properties of Li–Mn–O films. It is observed that with the increase of annealing temperature the crystallinity as well as the electrical conductivity of the films increases. The films annealed at 600–700 °C are found to have high structural perfection and good electrical properties.     

Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O₂ flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In₂O₃ and monoclinic CuO. Transmittance of the films decreases with increase in O₂ flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In₂O₃ and CuO. The sheet resistance of the films decreases with increase in O₂ flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In₂O₃ and the conduction mechanism of Cu-In-O thin films is through O vacancy.     

Characterization of the hole transport and electrical properties in poly(9,9-dioctylfluorene)

A systematic study of the hole transport and electrical properties in blue-emitting polymers as poly(9,9-dioctylfluorene) (PFO) has been performed. We show that the temperature dependent and thickness dependent current density versus voltage characteristics of PFO hole-only devices can be accurately described using our recently introduced improved mobility model based on both the Arrhenius temperature dependence and non-Arrhenius temperature dependence. Within the improved model, the mobility depends on three important physical quantities: temperature, carrier density, and electric field. For the polymer studied, we find the width of the density of states σ=0.115 eV and the lattice constant a=1.2 nm. Furthermore, we show that the boundary carrier density has an important effect on the current density versus voltage characteristics. Too large or too small values of the boundary carrier density lead to incorrect current density versus voltage characteristics. The numerically calculated carrier density is a decreasing function of distance from the interface. The numerically calculated electric field is an increasing function of distance. Both the maximum of carrier density and minimum of electric field appear near the interface.     

Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films

Zinc sulfide thin films were prepared on glass substrates at room temperature using a chemical bath deposition method. The obtained films were annealed at temperatures ranging from 100 to 500 °C in steps of 100 °C for 1 h. The films were characterized by X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray analysis (EDX), optical absorption spectra, and electrical measurements. X-ray diffraction analysis indicates that the deposited films have an amorphous structure, but after being annealed at 500 °C, they change to slightly polycrystalline. The optical constants such as the refractive index (n_r), the extinction coefficient (k), and the real (ε₁) and imaginary (ε₂) parts of the dielectric constant are calculated depending on the annealing temperature. Aside from the ohmic characteristics of the I-V curve, a nonlinear I-V curve owing to the Schottky contact is also found, and the barrier heights (?_bn) for Au/n-ZnS and In/n-ZnS heterojunctions are calculated. The conductivity type was identified by the hot-probe technique.     

High-temperature impedance and modulus spectroscopy characterization of La/Mn modified PbTiO3 nanoceramics

Nanocrystalline samples of Pb_1−yLa_y(Ti_1−xMn_x)_(1−y/4)O₃ (PLMT) (y=0.06, x=0, 0.04, 0.07 and 0.10) were prepared by mechanical activation process (i.e., ball milling) followed by some annealing. The formation of single phase tetragonal crystal structure is confirmed by high-resolution X-ray diffraction study and by High resolution transmission electron micrographs (HRTEM), nano-scale compounds. The electrical behavior (i.e., impedance (Z) and electrical modulus (M)) of PLMT ceramics was studied by impedance spectroscopy technique in high temperature range. This study was carried out by means of the simultaneous analysis of the complex impedance (Z^?) and electrical modulus (M^*) functions in a wide frequency range (1 kHz-1 MHz). Impedance analysis has shown the grain and grain boundary contributions by an equivalent circuit model. Modulus analysis has provided vast information on charge transport processes. The simultaneous representation of the imaginary part of impedance and electric modulus (Z″, M″) vs. frequency revealed the localization of relaxation. The activation energy obtained from relaxation data may be attributed to oxygen ion vacancies.     

Effect of CuO addition on the optical and electrical properties of sodium zinc borophosphate glasses

Sodium borophosphate glasses doped with copper ions having general composition 20Na₂O-20ZnO-25B₂O₃-(35-x) P₂O₅-x CuO (x=1-8 mol %) were prepared using conventional melt-quench method and characterized by density, UV-visible optical absorption, photoluminescence and conductivity measurements. E_optical values for different glass samples are found to decrease systematically from 3.5 to 2.5 eV with increase in CuO content in the glass. Network modifying action of CuO with the glass network has been confirmed from the UV-visible optical absorption studies. Presence of Copper in the form of Cu⁺ species has been confirmed from photoluminescence measurements. The electrical conductivity (σ) increases with increase in copper oxide content in the glass and temperature dependence of electrical conductivity confirmed the semiconducting nature of the samples.     

Effect of sulfur substitutions on optical, electrical and structural properties of Ge(SxSe1−x)2 system

Glasses in the system Ge-Se-S were prepared with different Se/S ratios in order to investigate the compositional dependence of selected physical properties. We report the results of a systematic study examining the UV-vis transmission, dc electrical conductivity and X-ray diffraction of the system Ge(S_xSe_1−x)₂ with x=0, 0.1, 0.4 and 1.0 where replacement of S by Se was made. The changes in the optical energy gap, E_g, (from 1.95 to 2.43 eV) and band tail width, E_e, (from 103 to 243 meV) behave contrarily to the change in refractive index, n, (from 2.3 to 2) with the progressive replacement of S by Se. This behavior was discussed and interpreted with the changes in cohesive energy. The analysis of defects in the prepared films was carried out by the examination of activation energies obtained from dc electrical conductivity. The analysis of the X-ray diffraction pattern revealed a remarkable reduction in the intensity of the first and second diffraction peaks with the progressive replacement of S content, which confirms a change in the intermediate range order structure: reorganization of the structural properties.     

Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atoms

On the basis of the mean value of electrical breakdown time delay and the standard deviation of electrical breakdown time delay σ dependence on the afterglow period τ, the mechanisms which dominantly influence to breakdown initiation in nitrogen were separated. It was shown that the positive ions formed in mutual collision of long‐lived metastable molecules have a dominant role in breakdown initiation for τ values up to 70 ms. The metastable molecules were derived from previous breakdown and discharge. In this case σ ≪ t_d and the total time delay t_d is approximately equal to formative time t_f which decreases in value with the increase of overvoltage. When positive ions have a dominant role in the breakdown initiation the Gaussian distribution describes data of t_d ≈ t_f very well. For τ > 1 s, N (⁴S) atoms formed in previous breakdown and discharge, have a dominant role in the breakdown initiation. Then, σ ≈ and Laue's distribution, which is valid for statistical time delay t_s, describes t_d data very well (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analysis of electrical tree propagation in XLPE power cable insulation

Electrical treeing is one of the major breakdown mechanisms for solid dielectrics subjected to high electrical stress. In this paper, the characteristics of electrical tree growth in XLPE samples have been investigated. XLPE samples are obtained from a commercial XLPE power cable, in which electrical trees have been grown from pin to plane in the frequency range of 4000-10,000 Hz, voltage range of 4-10 kV, and the distances between electrodes of 1 and 2 mm. Images of trees and their growing processes were taken by a CCD camera. The fractal dimensions of electric trees were obtained by using a simple box-counting technique. The results show that the tree growth rate and fractal dimension was bigger when the frequency or voltage was higher, or the distance between electrodes was smaller. Contrary to our expectation, it has been found that when the distance between electrodes changed from 1 to 2 mm, the required voltage of the similar electrical trees decreased only 1or 2 kV. In order to evaluate the difficulties of electrical tree propagation in different conditions, a simple energy threshold analysis method has been proposed. The threshold energy, which presents the minimum energy that a charge carrier in the well at the top of the tree should have to make the tree grow, has been computed considering the length of electrical tree, the fractal dimension, and the growth time. The computed results indicate that when one of the three parameters of voltage, frequency, and local electric field increase, the trends of energy threshold can be split into 3 regions.