Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals

Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746–40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were grown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom.     

双氟取代苯和联苯类液晶化合物的量子化学研究

运用AM1和PM3两种SCF-MO方法,通过能量梯度全优化计算,给出了对一系列环上双氟取代苯、联苯液晶化合物的稳定几何构型、电子结构和分子基本性质(生成热、偶极矩、前沿分子轨道能级等)。联系有机结构理论进行了分析和讨论。初步阐明了其分子结构与介电各向异性之间的关系,为设计和开发新型液晶分子研究提供了有较大价值的线索。     

近化学计量比Ce∶Mn∶LiNbO3晶体光折变性能研究

在LiNbO3中掺进0.015mass%MnCO3和 0.1mass%CeO2,以Czchralski法生长Li/Nb比为1.38的近化学计量比Ce∶Mn∶LiNbO3(Ce∶Mn∶SLN)晶体和Li/Nb比为0.946的同成分Ce∶Mn∶LiNbO3(Ce∶Mn∶CLN)晶体.测试了晶体的红外光谱和紫外可见吸收光谱,讨论了Ce∶Mn∶SLN晶体OH－吸收峰和吸收边移动机理.利用二波耦合光路测试了晶体的指数增益系数,Ce∶Mn∶SLN晶体指数增益系数Γ达到27 cm2－.同时,研究了Ce∶Mn∶SLN指数增益系数提高的机理.     

Study on typical behavior of transient nature (I-t) and hysterisis nature of I–V characteristics of dye doped solid state thin film photoelectrochemical cell

In this present investigation, we describe the steady state current voltage (I–V) characteristic of Crystal violet dye dispersed solid state photoelectrochemical cell (PEC). Typical behavior of dark current-voltage characteristic by increasing and decreasing external bias voltage has a similar form like hysterisis in nature. Although we have already observed this hysterisis nature in case of both forward and reverse bias condition, yet it is clear that the reverse hysterisis curve is more prominent than forward hysterisis. In this paper, we are getting double values of current (I) for a single value voltage, which is also helpful to understand the charge transport process through disordered materials. As the bias increases, the distribution of traps depth, which is exponential in nature, changes toward order state (resulting increase in disordered parameter α) This means that as α increases, it tends to reach the most order state of material. When external bias voltage is at 3.5 V, the value of disorder parameter becomes 1, and when bias voltage is beyond 3.5 V, the diffusion comes enhanced in nature.     

Optical properties of Dy ions in sodium gadolinium tungstates crystal

Dy³⁺-doped NaGd(WO₄)₂ crystal with sizes of about Φ20×40 mm² was grown by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra, and fluorescence decay curve of Dy³⁺-doped NaGd(WO₄)₂ have been recorded at room temperature. Based on the Judd-Ofelt (J-O) theory, the intensity parameters from the measured line strengths were evaluated. The J-O parameters were used to predict radiative transition probabilities, radiative lifetimes and branching ratios for various excited levels of Dy³⁺-doped NaGd(WO₄)₂ crystal. The luminescent quantum efficiency of the ⁴F_9/2 level was determined to be approximately 63% for this material. The emission cross-section of the ⁴F_9/2→⁶H_13/2 transition was estimated by using the Füchtbauer-Ladengurg method.     

钽的层裂实验数值模拟

 采用连续介质力学基唯象模型模拟分析了钽的平板撞击层裂行为。该模型包括了材料的非线性弹性（状态方程）、率相关塑性和孔洞的形核及生长等多种效应,并且采用一种对角隐式Runge-Kutta方法来求解本构率方程组,提高了热粘塑性本构关系计算的稳定性及精度。将数值模拟结果和相关实验数据进行了对比分析,结果表明,对于样品中的拉应力峰值明显高于材料层裂强度的实验（中、高速平板撞击实验）,理论模型具有较好的预估能力,但对于临界层裂问题（低速平板撞击实验）,该模型对材料损伤与失效过程的描述可能不够准确,需要进一步改进。     

Influence of oxygen pressure of ZnO/glass substrate produced by pulsed filtered cathodic vacuum arc deposition

The effects of oxygen pressure on the structural and optical properties of high quality transparent conductive ZnO thin films were studied in detail. ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition system under various oxygen pressures on glass substrate at room temperature. With increasing oxygen pressure, the structure and optical properties of films change. The structural and optical properties of the ZnO thin films were investigated using X-ray diffraction, transmittance spectrometry, refractive index, oscillator parameters, energy band gap and Urbach tail. The films show c-axis oriented (0 0 2) hexagonal wurtize crystal structure. It has been found that the grain size of ZnO thin films increases from 16.9 to 22.6 nm with the increase of oxygen pressure from 3.8×10⁻⁴ to 6.9×10⁻⁴ Torr and the crystallinity is enhanced. Average transmittance is about 90% in the visible region of the ZnO thin films. From optical transmittance spectra of ZnO films, the absorption edge shifts towards the taller wavelength with an increase in oxygen pressure. The energy band gap decreases from 3.31 to 3.20 eV with an increase in oxygen pressure. The packing density investigation shows in ZnO films high packing densities (above 0.78) can be obtained.     

Electrical characterization of strontium tartrate single crystals

The a.c. and d.c. conductivity of SrC₄H₄O₆·3H₂O are measured and are found to lie between usual conductivities of semiconductor and insulator. Temperature dependence of d.c. conductivity shows intrinsic conduction, which is confirmed by the slope of versus data. Due to application of thermal energy, noticeable conductivity peaks imply liberation of water molecules during dehydration and the formation of strontium oxalate. The conductivity plot has a nature similar to the intrinsic-to-extrinsic transition found in normal semiconductors. There occurs Efros hopping conduction in our samples.     

Optical and electric properties of Nb-doped anatase TiO2 single crystal

Nb-doped anatase TiO₂ single crystal has been grown by chemical vapour transport method. Raman spectra shows that the obtained crystal with Nb of 0.08 wt% has typical anatase structure. An absorption band was observed at around 2.2 eV, which seems to be due to the d-d transition in the conduction band. The electron paramagnetic resonance and electric resistivity measurements show that the doped niobium makes quite shallow donor level whose orbital is d_xy-like centered at the titanium position of anatase.     

Charge density study under high pressure

The experimental and analytical method of the high-pressure powder experiment at BL10XU, SPring-8, is described. There is no doubt that BL10XU must be one of the most appropriate beam lines for high pressure X-ray diffraction experiment taking advantage of third generation synchrotron source. As an example of the advanced charge density study under high pressure, the structural change of Cs₂Au₂Br₆ by applying pressure is studied by Rietveld/MEM analysis. It reveals that the structural change of Cs₂Au₂Br₆ by applying pressure occurs basically at electron level, such as valence state change and chemical bonding, which may be called the electronic phase transition.