On the degradation of ZnS:Cu,Al,Au phosphor powder: The effects of temperature

Abstract

The effects of temperature are discussed when the ZnS:Cu,Al,Au (P22G) phosphor powder is bombarded by a 2 keV electron beam with a current density of 88 mA/cm² at an oxygen pressure of 2 × 10^?6 Torr at temperatures between 25 and 300°C. The rate of surface reaction decreases at higher temperatures due to the reduction in the mean stay time of the O₂ on the surface which is vital for the reactions according to an electron stimulated surface chemical reaction model. A direct correlation between the temperature and the initial cathodoluminescence (CL) brightness which depicts thermal quenching of the CL was observed.     

Carbon-assisted morphological manipulation of CdS nanostructures and their cathodoluminescence properties

CdS nanostructures with different morphologies and sizes were successfully fabricated through a facile and effective carbon-assisted thermal evaporation method. Through simply changing the positions of silicon substrates, the temperatures and the effects of carbon in different zones were modified, and thus the morphologies of CdS nanostructures were varied from multipods to nanobrushes to nanocups. These nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectrometry (EDS), X-ray powder diffraction (XRD) and Raman spectroscopy. Cathodoluminescence (CL) measurement shows that the as-grown CdS nanostructures display different luminescent properties. CdS multipods and nanocups show mainly green emission centered at 496 nm. However, nanobrushes exhibit predominant red emission band peaking at 711 nm. These interesting results show that carbon not only affected the growth process but also influenced the properties of CdS nanostructures.     

Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals

Strained AlN layers grown by MOVPE on sapphire and nominally unstrained AlN single crystals were studied employing photoluminescence, cathodoluminescence, and reflectance spectroscopy in the near-band edge range. The data allow one to determine fundamental optical parameters such as the band edge energy with its crystal field splitting and strain dependence which are still under discussion. Reflection measurements performed on crystal facets with different orientations and subjected to varying selection rules serve to assign the observed transitions to valence band states with specific symmetries.Near-band edge excitonic luminescence at around 6 eV was recorded as a function of temperature (). Fits to the data using standard models from the literature yield the temperature dependence E_g(T) of the band gap.     

Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films

We study the electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ film grown by pulsed laser deposition through Hall effect and cathodoluminescence which consist of ultraviolet luminescence (UV), blue luminescence (BL) and green luminescence (GL) bands. The Hall effect measurements indicate that the carrier concentration increases from 7.16×10¹¹ to 6.35×10¹² cm⁻³ with increasing a nominal Zn content from 3 to 7 at%. The UV band at 272 nm is not attributed to Zn dopants and ascribed as radiative electron transition from conduction band to a self-trapped hole while the BL band is attributable to defect level related to Zn dopant. The BL band has two emission peaks at 415 and 455 nm, which are ascribed to the radiative electron transition from oxygen vacancy (V_O) to valence band and recombination of a donor–acceptor pair (DAP) between V_O donor and Zn on Ga site (Zn_Ga) acceptor, respectively. The GL band is attributed to the phonon replicas’ emission of the DAP. The acceptor level of Zn_Ga is estimated to be 0.26 eV above the valence band maximum. The transmittance and absorption spectra prove that the Zn-doped β-Ga₂O₃ film is a dominantly direct bandgap material. The results of Hall and cathodoluminescence measurements imply that the Zn dopant in β-Ga₂O₃ film will form an acceptor Zn_Ga to produce p-type conductivity.     

Strong Visible and Near-Infrared Cathodoluminescence in Alkali Feldspar

In this study, cathodoluminescence (CL) spectroscopy at direct current and alternating current under the sample temperature condition of 40–293 K using different modulation frequencies is presented for alkali feldspar from the Dartmoor granite (UK). These feldspars contain strain-controlled lamellar crypto- and microperthites that are cross-cut by strain-free deuteric microperthites. The CL spectra of the alkali feldspar at room and low temperature confirm that the observed emission peaked at ～460 nm could be associated with Al-O^?-Al or Ti impurity centers, yellow emission ～560 nm could be associated with the presence of the centers such as radiation-induced defect centers, and ～756 nm emission could be associated with the Fe³⁺ impurity center on T₁ and T₂ sites. The consequence of their association is to produce different luminescence properties such as intensity, peak wavelength, and band shape.     

D3→FJ emission of Tb doped sol–gel silica

Amorphous silica samples doped with 0.1 and 1 mol% of terbium (Tb) were synthesized by the sol–gel method. In addition to the green light associated with ⁵D₄→⁷F_J transitions of Tb³⁺, the sample containing 0.1 mol% also emitted blue light as a result of ⁵D₃→⁷F_J transitions during photoluminescence (PL) measurements. As a result of concentration quenching this blue emission was not observed for the samples doped with the higher concentration (1 mol%). However the blue ⁵D₃ →⁷F_J emission was observed in the 1 mol% doped samples during cathodoluminescence (CL) measurements. Since a rough calculation indicated that the excitation rate in the CL system where the blue emission is observed may be similar to a laser PL system under conditions where the blue emission is not observed, the difference is attributed to the nature of the excitation sources. It is suggested that during the CL excitation incident electrons can reduce non-luminescent Tb⁴⁺ ions in the silica, substituting for Si⁴⁺ ions, to the excited (Tb³⁺)? state and that these are responsible for the blue emission, which does not occur during PL excitation.     

Concentration effect of Tm on cathodoluminescence properties of SiO2:Tm and SiO2:Ho,Tm systems

Cathodoluminescence (CL) properties of SiO₂ powders activated with thulium (Tm³⁺) and holmium (Ho³⁺) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm³⁺ co-doped with Ho³⁺ were studied. The 460 nm peak was monitored and the influence of the beam energy and concentration of Tm³⁺ ions on the emission properties of this peak was also monitored. The peculiar behavior whereby the 460 nm emission peak decreases and the increase in the 705 and 865 nm peaks with the increase in the concentration of Tm³⁺ ions is reported. The relationship between the accelerating beam voltage and the CL intensity of the blue emission peak (460 nm peak) is established. Morphology, particle size and optical properties were characterized with Scanning electron microscopy (SEM), UV/VIS Lambda 750 S spectrometer and Auger electron spectroscopy (AES) equipped with Ocean Optics S2000, respectively.     

Sensitizing effects of ZnO quantum dots on red-emitting Pr-doped SiO2 phosphor

In this study, red cathodoluminescence (CL) (λ_emission=614 nm) was observed from Pr³⁺ ions in a glassy (amorphous) SiO₂ host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO₂:Pr³⁺ suggesting that the ZnO QDs transferred excitation energy to Pr³⁺ ions. That is, ZnO QDs acted to sensitize the Pr³⁺ emission. The sol–gel method was used to prepare ZnO–SiO₂:Pr³⁺ phosphors with different molar ratios of Zn to Si. The effects of the ZnO QDs concentration and the possible mechanisms of energy transfer from ZnO to Pr³⁺ are discussed. In addition, the electronic states and the chemical composition of the ZnO–SiO₂:Pr³⁺ phosphors were analyzed using X-ray photoelectron spectroscopy (XPS).     

Spatially resolved piezo-spectroscopic characterizations for the validation of theoretical models of notch-root stress fields in ceramic materials

The main aim of this work is a precise experimental assessment of the local stress fields developed at the notch-root in a ruby crystal, selected as a paradigm brittle material, by means of photo- and electron-stimulated luminescence techniques. Our approach takes advantage of the piezo-spectroscopic (PS) effect, which consists of a spectral shift of the luminescence emitted by the material due to lattice strain. Highly spatially resolved stress maps were extensively collected at the notch-root and spectral shifts monitored for the chromophoric (R-lines) fluorescence observed in a single-crystalline ruby sample. Experimental data were analyzed and compared to the theoretical solutions of notch-root stress fields given by Filippi and by Creager-Paris. Due to its inherent simplifications, the Creager–Paris solution was found leading to underestimation of the maximum stress value piled up in the material, while the Filippi’s solution represented a more suitable approximation for the stress field developed at the notch-root.     

Minimum of oscillator strength of excitons in ultra-narrow GaAs/AlGaAs quantum wells:: Theory and experiment

A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed. A crossover from strong (separate localization of electron and hole levels) to weak confinement (with localization of excitonic center of mass) is predicted to occur for decreasing thickness, and is characterized by a minimum of the oscillator strength per unit area. Cathodoluminescence measurements performed on a series of GaAs/Al_0.35Ga_0.65As QWs with thicknesses from one to eight monolayers show a minimum of the oscillator strength, in agreement with theory, and indicate that the crossover from strong to weak confinement occurs at a thickness of about three monolayers for this composition.