Design of high T g Zr-based metallic glasses using atomistic simulation and experiment

In this paper, we systematically investigate local atomic structures of Zr_100?x Al _x (0???x???72) alloys using molecular dynamics simulations. Radial distribution functions of Zr-Al configurations at 300 K indicate that Zr-Al metallic glasses form only when the Al atomic concentration is larger than 32%. Voronoi polyhedral analysis shows that Zr₄₀Al₆₀ has the highest fraction of ?0,0,12,0? icosahedra around Al atoms, which are characteristic of amorphous microstructures. Variations of thermal expansion coefficient and heat capacity of Zr_100?x Al _x (40???x???72) metallic glasses as a function of temperature from 1100 to 800?K reveal that Zr₄₀Al₆₀ has the highest transition temperature of 1008?K. To confirm the simulation results, Zr-Al metallic glasses were fabricated using co-sputtering deposition; differential scanning calorimetry testing suggests the highest crystallisation-onset temperature of above 920?K is within Zr_100?x Al _x where 43?<?x?<?61. The experimental finding is in a good agreement with the simulation predictions.     

Thermal stability and UV–Vis-NIR spectroscopy of a new erbium-doped fluorotellurite glass

A new transparent bulk glass from the system 76TeO₂?·?10ZnO?·?9.0PbO?·?1.0PbF₂?·?3.0Na₂O doped with Er³⁺ (TZPPN doped with Er³⁺) has been prepared using the conventional melt-quenching method. Results of differential thermal analysis (DTA) measurements indicate good thermal stability of this glass. The refractive indices at different wavelengths, the optical energy gap, the Sellmeier gap energy and the dispersion energy have been estimated. The Judd–Ofelt parameters, Ω _t (t?=?2,?4,?6) of Er³⁺ were evaluated from optical absorption spectra. Electric dipole, magnetic dipole type transition probabilities, spectroscopic quality factors, branching ratio and radiative lifetimes of several excited states of Er³⁺ have been predicted using intensity Judd–Ofelt parameters. The spectroscopic properties indicate that TZPPN glass doped with Er³⁺ is a promising candidate for laser applications and may be suitable for upconversion fibre optical devices.     

Temperature derivatives of the bulk modulus of ZrB2 calculated by using the pressure derivative of the bulk modulus

The temperature dependence of the bulk modulus of ZrB₂ above room temperature was calculated by using the equations by Garai and Laugier (J. Appl. Phys. 101 (2007) p.023514) and Lawson and Ledbetter (Philos Mag. 91 (2011) p.1425). The present calculations involve the accurate data for pressure derivative of the bulk modulus for the Anderson–Grüneisen parameter in addition to the other experimental parameters involved. It is interesting to note that the cited equations derived by different thermodynamic approaches give almost equivalent values for the temperature dependencies of the bulk modulus of ZrB₂. The present results for the temperature derivatives of the bulk modulus of ZrB₂ vary from ?0.016?GPa/K at 300–400?K to ?0.022?GPa/K at 1500–1600?K, being in good agreements with the corresponding experimental values.     

Thermal Resistance Measurement across a Wick Structure Using a Novel Thermosyphon Test Chamber

A novel system is developed for measuring the thermal resistance across thin layers of sintered copper wicks of varying porosity. Wicks to be tested are integrated into a passive vertical thermosyphon system, and the resistance is measured for a series of input power levels. The wicks are sintered to a thermally conducting pedestal above a pool of deionized water and heated from below. The apparent thermal resistance across the wick (from the pedestal/wick interface to the vapor space) under the evaporative operating conditions encountered in heat pipes is measured using thermocouples. The apparent thermal resistance across the wick is measured to be as low as 0.01°C/W, corresponding to an evaporative heat transfer coefficient of greater than 128,000 W/m²K.     

Two-Phase Closed-Loop Thermosyphon for Electronic Cooling

This study experimentally investigated the thermal performance of a two-phase closed-loop thermosyphon with a thermal resistance model for electronic cooling. The evaporator, rising tube, condenser, and falling tube, which are the four main devices, formed a closed-loop system with water as the working fluid. The experimental parameters were the evaporator surface type, fill ratio of working fluid, and input heating power. The results indicated that the evaporator and condenser thermal resistance decrease with increasing input heating power. The condenser thermal resistance clearly increased with increasing fill ratio. A groove-type evaporator surface with 0.2 mm height and 1 mm width had the best performance, decreasing the evaporator thermal resistance about 15.5% compared to a smooth surface. Correlations for evaporator and condenser thermal resistance were also developed, and their precisions, when compared with the experimental data, were about 9.6 and 11.6%, respectively. Because of the intermittent boiling mechanism at 47% fill ratio with input heating power from 60 to 80 W, the temperature showed obvious oscillations with the smooth evaporator surface.     

Application of a Factorial Design Method to Determine the Accuracy of a Solution to an Inverse Heat Conduction Problem

A numerical/experimental inverse procedure was employed to estimate the temperature-dependent thermal conductivity of a solid body in which 1D heat conduction in a top heated cylindrical sample is assumed. The emphasis is focused on the issue of sensitivity of results to selected assumptions made in inverse calculations. It has been found that the accuracy of heat capacity evaluation brings the largest contribution to final errors (up to 74%). Density accounts for one-fourth to one-third of the total error of determination. The failure to ensure unidirectional heat conduction in a sample during an experiment is important only at elevated temperatures.     

Decomposition model for phonon thermal conductivity of a monatomic lattice

An analytical treatment of decomposition of the phonon thermal conductivity of a crystal with a monatomic unit cell is developed on the basis of a two-stage decay of the heat current autocorrelation function observed in molecular dynamics simulations. It is demonstrated that the contributions from the acoustic short- and long-range phonon modes to the total phonon thermal conductivity can be presented in the form of simple kinetic formulas, consisting of products of the heat capacity and the average relaxation time of the considered phonon modes as well as the square of the average phonon velocity. On the basis of molecular dynamics calculations of the heat current autocorrelation function, this treatment allows for a self-consistent numerical evaluation of the aforementioned variables. In addition, the presented analysis allows, within the Debye approximation, for the identification of the temperature range where classical molecular dynamics simulations can be employed for the prediction of phonon thermal transport properties. As a case example, Cu is considered.     

Structure of precipitates and orientation relationships in Al,Ge, Mo-doped higher manganese silicide crystals

Abstract

The structure of Al, Ge, Mo-doped Higher Manganese Silicide (HMS) crystals with the general formulas Mn(Si_0.99Ge_0.01)_1.75, Mn(Si_0.995Ge_0.005)_1.75 and (Mn_0.98Mo_0.02)[(Si_0.98Ge_0.02)_1.75]_0.99Al_0.01 was investigated by scanning and transmission electron microscopy, electron diffraction and X-ray energy dispersive spectrometry in a wide scale range from a few mm to several Å. Several secondary phases were identified in the Mn₄Si₇ matrix: Ge_1?xSi_x (0.1 < x < 0.9) solid solution precipitates with Ge concentration ranging from 5 at. % up to 93 at.%, MoSi₂ platelets, MnSi and Mn₅Si₃ precipitates. Their morphology, structure and crystallographic relationships with the HMS matrix were determined. Mostly local strains in the matrix and precipitates due to lattice misfits at interfaces derived from crystallographic relationships were found two orders of magnitude higher than deformation induced by thermal expansion mismatch. Only a few exceptions of specific relationships were found when the lattice misfit and thermal mismatch have close values. The largest misfit of about 22% was observed between MnSi and Mn₄Si₇ what led to big and numerous cracks in crystals. Therefore, doping can improve the material performance (1) by preventing the formation of MnSi precipitates with metallic properties and (2) by reduction of cracking and crack propagation because of larger MnSi /Mn₄Si₇ lattice misfit compared to Ge_1?xSi_x /Mn₄Si₇ or MoSi₂/Mn₄Si₇ misfits.     

The influence of SiCp oxidized on the interface layer and thermal conductivity of SiCp/Al composites

In this work, oxidation of silicon carbide particles (SiCp) at elevated temperature and its influence on the interface layer and thermal conductivity of SiCp/ZL101 composites prepared using pressure infiltration process were investigated respectively. It is found that initial temperature for the oxidation of SiCp is about 850?°C, and that the oxidation increment of SiCp and the thickness of SiO₂ layer increase with the increase in pre-oxidation temperature and time, when the oxidized temperature exceeds 1100?°C, or the duration time exceeds 2?h at 1100?°C, a small amount of ablation will take place on the SiCp, as well as the oxidized layer has some loss. The formation of SiO₂ layer can provide certain interface reactions with interface layers (3.1–6.36?μm), and the higher the thickness of SiO₂ layer, the thicker the interface layer in SiCp/Al composites. However, the thickness of SiO₂ layer is more than 5.9?μm, which is not benefit for the formation of interface layer. With the increase in the thickness of interface layer, thermal conductivity declines, but is not linear.