Electron Probe Microanalysis of HfO2 Thin Films on Conductive and Insulating Substrates

Quantitative electron probe microanalysis of highly insulating materials is a complicated problem, partially solved by coating samples with grounded thin conductive layers or using novel scanning electron microscopy (SEM) techniques, such as low-voltage and/or variable pressure SEM. In this work, some problems of quantitative X-ray microanalysis of thin HfO₂ films, in particular the possibility to determine mass thickness correlated to the density of the layer material, are discussed. For comparison, Al₂O₃, Ta₂O₅ and TiO₂ films grown onto both semiconductive Si and insulating quartz substrates were also analysed. All the films studied were synthesized by atomic layer deposition method.     

固支圆板安定性的实验研究

本文利用机动法求解固支圆板在循环集中力作用下的安定问题,得到了安定载荷的理论解;利用激光全息的实验方法研究固支圆板的塑性累积现象,测得了安定载荷的上下限,并对实验结果进行了分析研究.     

Sol Processing of Conjugated Carbon Nitride Powders for Thin‐Film Fabrication

The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO₃, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse‐coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin‐film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo‐electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes.     

Facile Preparation of Hydrophobic Colloidal MFI and CHA Crystals and Oriented Ultrathin Films

We report novel routes for synthesis of defect‐free, hydrophobic and monodispersed 10 nm (5 unit cells) thick MFI crystals and 100 nm CHA crystals. The crystals are obtained in high yield and display very high 1‐butanol adsorption from aqueous solution. These crystals are assembled in monolayers for the growth of ultrathin and uniformly oriented films with thicknesses of 36 nm and 330 nm, respectively, using a synthesis gel in the form of a powder. This method is very simple and may open up for industrial preparation of materials with improved performances.     

Sol-Gel Preparation and Photoelectrochemical Properties of Fe2TiO5 Thin Films

Polycrystalline Fe₂TiO₅ films were prepared on nesa silica glass substrates by the sol-gel method, and their photoanodic properties were measured in a three-electrode wet cell with an aqueous buffer solution of pH = 7. Gel films were crystallized into Fe₂TiO₅ when fired at 500°C. The photoanodic current significantly increased when the films were fired at 700°C, and then decreased with increasing firing temperature. Thicker films obtained by repeating the gel film deposition and firing showed smaller photocurrent, and the 50 nm thick film prepared via non-repetitive deposition exhibited the maximum photocurrent. Although the photoresponse was extended to wavelengths near 500 nm, the maximum quantum yield was as low as 0.12 at a wavelength of 340 nm.     

Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Experimental results on the epitaxy of Si and Ge on Si(0 0 1) and Si(1 1 1) surfaces, which are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed. Techniques for simultaneous epitaxial growth and STM measurements at high temperature are described. The ability to access the evolution of the growth morphology during growth down to the atomic level enables the study of the influence of surface reconstruction on the growth. The relatively complete characterization of the growth process facilitates comparison to theoretical models and allows the identification of fundamental growth processes. For instance, the observed transition between different growth modes can be explained by specific growth processes included in a model. The influence of strain on the growth morphology is reviewed for the case of heteroepitaxial growth of Ge on Si. With the method of combining STM imaging and epitaxial growth, the transition from two-dimensional to three-dimensional growth as well as the evolution of size and shape of three-dimensional islands can be studied.     

Y3+掺杂BST/ZrO2复合薄膜的制备及介电性能研究

运用溶胶-凝胶法在Si/SiO2/Ti/Pt基底上制备了掺杂不同量的Y3+的单层Ba0.65Sr0.35TiO3 (BST)薄膜和并联结构的BST/ZrO2复合薄膜.研究发现:当BST溶胶中掺入了适量的Y3+后,制备的单层BST的表面形貌得到改善,介电性能提高;掺杂的Y3+为1mol;时单层BST薄膜介电性能最佳,介电常数为400.53;介电损耗为0.0125.BST/ZrO2复合薄膜的电容值相对于单层BST薄膜得到明显提高,当烧结温度为750℃时,BST/ZrO2复合薄膜综合介电性能最佳,介电常数790.12;介电损耗达到0.051.     

微波器件微放电阈值计算的蒙特卡罗方法研究

为了精准快速地计算微波器件中微放电效应的阈值,在传统蒙特卡罗方法的基础上,提出了三种不同的蒙特卡罗方法,分别对二次电子的初始能量、出射角度和初始相位等参数进行随机,结合四阶龙格-库塔法和Furman模型计算电子的运动轨迹和单次碰撞产生的二次电子发射系数,然后应用不同的方法计算有效二次电子发射系数作为微放电效应的判据.以平板传输线TEM模式为研究对象,采用四种不同的蒙特卡罗方法计算微放电阈值,并与统计模型结果进行对比.结果表明单电子-多碰撞蒙特卡罗方法误差最小,而且稳定性最好.     

Dynamic anisotropy and heterogeneity of polystyrene thin films as studied by inelastic neutron scattering

We studied the dynamic anisotropy and heterogeniety of polystyrene thin films in glassy state with inelastic neutorn scattering. Adjusting the scattering vector to the directions parallel and perpendicular to the film surface, we observed the elastic scattering intensities as a function of temperature. It was found for the 200 A film that the elastic intesity decreased with increasing temperature more rapidly in the perpendicular direction than in the pararell direction, showing the higher mobility in the perpendicular direction. However, such dynamical anisotropy was not observed in the 1000 A film. The decrease in the mobility was observed with the film thickness in both the directions. These results were explained in terms of an interface hard layer. We also evelauated the dynamical heterogeniety from the non-Gaussian parameter A0, which increased with decreasing the film thickness, showing the increase in the dynamical heterogeneity. Assuming a simple bi-layer model consisting of the interface hard layer and the bulk-like layer, we analyzed the thickness dependence of the non-Gaussian parameter A0 and the mean square displacement (u2) to find that the hard layer has a thickness of approximately 130 A and a mean square displacement of approximately 0.018 A2 at 230 K.     

Dependence of substrate temperature of Zn0.8Co0.2O films deposited by pulsed DC magnetron sputtering

We have investigated the microstructure, electrical and magnetic properties of the ZnCoO thin films, which were prepared by the asymmetrical bipolar-pulsed DC magnetron sputtering as a function of substrate temperature. The structural properties of ZnCoO films were characterized with a high resolution XRD. The XRD patterns of the ZnCoO films showed a strong (0 0 2) preferential orientation. The average crystallite size was 23–35 nm, which was estimated from full width at half maximum of XRD results. The electrical resistivity of the films were measured by the van der Pauw method through Hall measurement and showed below 10⁻¹ Ω cm above 300 °C. The magnetic properties of the ZnCoO films were analyzed by the alternating gradient magnetometer at room temperature. All of the films were exhibited the ferromagnetic nature. The high conductivity and room temperature ferromagnetism of the ZnCoO films above 300 °C suggested that the possibility for the application to diluted magnetic semiconductors.