HL-2A装置硅化对杂质线辐射的影响

在2004年的实验中，首次在HL-2A偏滤器装置上进行了硅化器壁处理，在这种硅化器壁的条件下，对轻重杂质的线辐射进行了研究，并与无硅化条件下的杂质特性作了比较。在实验中，通过观测杂质的辐射特性研究了硅化对杂质的吸附作用和硅化效果的维持。并通过调整硅化后的辉光放电清洗，研究了硅化对氢再循环的影响。     

理想的胰岛素晶体

在自然界或实验室内 ,“理想化”总是一个难以实现的概念 .但最近美国休斯顿大学的P .Vekilov教授及其同事们发现 ,他们常常可以将胰岛素晶体生长成理想的晶体形式 .他们让胰岛素蛋白质在一个已有的胰岛素晶体的螺旋位错缺陷处进行生长 ,蛋白质将绕着这个缺陷发生晶化并形成一个理想晶状胰岛素 .这是因为螺旋位错常常使晶层间产生一个微小的角度偏差 .对于大多数的晶体来说 ,晶层间的相互作用能促进晶体生长时界面间的配置 ,并导致晶层阶跃发生束缚和形成一个有条纹的晶体 .除此之外 ,在溶液中输入被溶解物质也能引起晶层阶跃的约束 .胰岛…     

Nano-tribological study on a super-hydrophobic film formed on rough aluminium substrates

A novel super-hydrophobic stearic acid (STA) film with a water contact angle of 166^o was prepared by chemical adsorption on aluminum wafer coated with polyethyleneimine (PEI) film. The micro-tribological behavior of the super-hydrophobic STA monolayer was compared with that of the polished and PEI-coated Al surfaces. The effect of relative humidity on the adhesion and friction was investigated as well. It was found that the STA monolayer showed decreased friction, while the adhesive force was greatly decreased by increasing the surface roughness of the Al wafer to reduce the contact area between the atomic force microscope (AFM) tip and the sample surface to be tested. Thus the friction and adhesion of the Al wafer was effectively decreased by generating the STA monolayer, which indicated that it could be feasible and rational to prepare a surface with good adhesion resistance and lubricity by properly controlling the surface morphology and the chemical composition. Both the adhesion and friction decreased as the relative humidity was lowered from 65% to 10%, though the decrease extent became insignificant for the STA monolayer. The project supported by the National Natural Science Foundation of China (50375151, 50323007, 10225209) and the Chinese Academy of Sciences (KJCX-SW-L2)     

高压增氧T′相R_2CuO_(4+δ)(R=Nd～Tm)低温磁性研究

T′相R2CuO4稀土铜氧化合物由于尺度效应而产生弱铁磁性行为已经被人们关注,报导了通过高温高氧压(6GPa,1000℃)合成稀土T′相R2CuO4(R=Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er和Tm)化合物的结构和磁学性能。磁化率曲线显示,在低温下所有的高压增氧R2CuO4样品都出现新的低温弱铁磁性反常行为,转变温度在28K附近。新的低温弱铁磁性行为是由于CuO2面上微量氧空穴的掺入,使处于反铁磁有序CuO2面形成局域化的铁磁性团簇造成。实验证明新发现的低温弱铁磁性行为与尺度效应产生弱铁磁性行为属于完全不同的物理机制。结果还预示T′相R2CuO4稀土铜氧化合物很难通过空穴掺杂而实现超导。     

光纤光栅选频掺Yb3+双包层光纤激光器

利用相位掩模法 ,在D形内包层掺Yb3 双包层光纤一端直接写制出Bragg光栅 ,用作双包层光纤激光器的输出腔镜 .试验得到了线宽为 0 196nm ,波长为 10 5 8 2nm ,最高输出功率为 5 70mW的稳定激光输出 ,解决了激光器中模式竞争造成的输出不稳定现象 .从速率方程出发 ,对激光器的输出功率与抽运功率、光栅反射率的关系以及最佳光纤长度进行了理论分析 ,结果与实验符合很好     

走近纳米科技

 纳米科技于20世纪70年代兴起,进入21世纪越来越被大家耳熟。纳米科技在促进科技进步,提高社会文明程度,改善人类生存质量,更新对物质世界的认知及观念上扮演了举足轻重的角色。纳米是长度单位。一纳米为一米的十亿分之一,如果你的拇指指甲盖宽14毫米,这个比例就相当于拇指指甲盖宽度与地球直径间的比例。纳米科技所接触、研究、开发的是100纳米～0.1纳米范围内物质的性质和应用。一个分子或一个原子大小的数量级大致在10纳米。因此,纳米科技也可以说是在分子水平上观察、分析、研究物质的物理、化学性质并加以开发利用。     

Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal

LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti： LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively： The peaks at 716nm and 798nm may stem from the VLi^＋ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4＋-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.     

Nanoporous Structure in Low-Dielectric Films with Positronium Annihilation Lifetime Spectroscopy

We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributions, and interconnectivity, by using depth profiled positronium annihilation lifetime spectroscopy (PALS). It is found that PALS has good sensitivity to probe both interconnected and closed pores in the range from 0.3nm to 3Onto, even in the film buried beneath a diffusion barrier. A series of low dielectric constant films of organosilicon-silsequioxane with different weight percentages of porogen have been comparatively investigated. The PALS technique can be used to distinguish the open porosity from the closed one, to determine the pore size, and to detect the percolation threshold with the increasing porosity that represents the transition from closed pores to interconnected pores.Furthermore, the pore percolation length can be derived.