FeCuNbSiB非晶粉体/IIR复合薄膜的拉伸及压缩应力阻抗效应

以FeCuNbSiB非晶粉体/IIR复合薄膜材料为研究对象,分别研究了该材料在固定测试频率为1KHz下的拉伸和压缩应力阻抗效应。其中压缩速度为0.01mm/s,压缩最大应力为1MPa;拉伸速度为0.05mm/s,拉伸最大应力为2.4MPa。同时,将2种测试过程在每隔50s时间,计算一个等效的拟合点,并将这些等效拟合点进行曲线拟合,获得相应的拟合曲线。接着我们又对拉伸应力阻抗及压缩应力阻抗等效拟合曲线经行求导处理,得出相应的能够表征应力阻抗的敏感性的函数Z’(σ)。试验结果表明:拉伸过程阻抗随着应力增大而降低,压缩过程阻抗随着应力增大而增大。由于该复合薄膜的基体是丁基橡胶,适合于微小应力敏感的测试。而压缩应力阻抗方面,其耐压强度相对耐拉强度大很多,论文中只讨论了压应力范围为0~1MPa的压应力阻抗效应。在微应力条件下,压应力阻抗敏感性能不及拉伸应力阻抗。而在大应力下其应力敏感特性较好。     

Micromachined Uncooled IR Bolometer Linear Array Using VO2 Thin Films

Mixed vanadium oxide thin films, as VO₂ for the main composition are materials for uncooled microbolometer due to their high temperature coefficient of resistance (TCR) at room temperature. This paper describes the design and fabrication of 8-element linear array IR uncooled microbolometers using the films and micromachining technology. The characteristics of the array is investigated in the spectral region of 8–12 m. The fabricated detectors exhibit responsivity of up to 10 KV/W, typical detectivity of 1.89×10⁸ cmHz^1/2/W, and thermal time constant of 11 ms, at 296 K and at a frequency of 30 Hz. Furthermore, The uncorrected response uniformity of the linear array bolometers is less than 20%.     

ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY

Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 10¹³ bits/cm² with a writing time per bit of ～1μs. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1nm in our case, corresponding to 10¹⁴ bits/cm². We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices.     

Optical transmittance spectroscopy of concentric-shell fullerenes layers produced by carbon ion implantation

Concentric-shell fullerenes, also called carbon onions, produced by carbon ion implantation into silver thin films, and subsequently deposited on a silica substrate, were studied by optical transmission spectroscopy in the wavelength range 0.2 - 1.2 μm. In this interval, the strongest absorption is due to the π-plasmon of sp²-like carbon. The position of the plasmon absorption band clearly evolved from 265 nm at low fluence to 230 nm at high implantation fluences. A simulation of the optical spectra based on dielectric models of the concentric-shell fullerenes layer allowed us to identify the first peak as due to disordered graphite and the latter to the carbon onions. The concentration of residual graphite and the filling fraction of the carbon onions produced at high fluences could be estimated by fitting the optical spectra with computed transmittance curves. Received 13 July 2000     

掺Bi钇铁石榴石薄膜光波导的线性双折射及消除方法

分析了光的线性双折射对磁光波导ＴＥ－ＴＭ模式转换，法拉第旋转，波导光隔离器隔离比及插入损耗的影响。研究了掺Ｂｉ钇铁石榴石薄膜光波导中的形状线性双折射，应力感生线性双折射及生长感生线性双折射的来源，特性和消除方法。     

类金刚石薄膜红外光学常数的计算机拟合

报道了一种对类金刚石薄膜红外透射率曲线最小二乘法拟合的方法，确定类金刚石薄膜的红外光学常数－折射率、吸收系数以及薄膜厚度及表面粗糙度。介绍了相应的数学模型，并给出了对类金刚石薄膜样品的实验测及拟合结果。     

垂直加热管外自由降膜流的破断特性

在较宽液膜雷诺数和进口温度范围内对垂直加热管外自由降膜流破断特性进行了实验研究。应用热物理学相似分析的方法整理实验数据，给出新的破断准则数综合关系式，并与１９９３年发表的另一些作者的结果作了比较。实验参数的变化范围如下：ｔｉｎ＝２０～９０℃，最大液膜雷诺数Ｒｅ为１．２１×１０４，最大热流密度达１．３９×１０５ｗ／ｍ２。     

Optical Phase Conjugation in Polyesters with Cyanoazobenzene Units in the Side Chain

Efficient optical phase-conjugate (PC) signals in four kinds of novel polyester films containing cyanoazobenzene units in the side chain are reported. One of them can efficiently generate only the photoinduced anisotropy (PA) component of PC signal, while the other three films can simultaneously generate two types of PC signals, PA and holographic components. These polymers have good potential not only as a phase conjugator but also as a polarization-sensitive hologram-recording material.Presented at the International Commission for Optics Topical Meeting, Kyoto, 1994     

Thin film substrates from the Raman spectroscopy point of view

We have investigated ten standard single crystal substrates of complex oxides on the account of their applicability in the Raman spectroscopy‐based thin film research. In this study, we suggest a spectra normalization procedure that utilizes a comparison of the substrate's Raman spectra to those of well‐established Raman reference materials. We demonstrate that MgO, LaGaO₃, (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.7 (LSAT), DyScO₃, YAlO₃, and LaAlO₃ can be of potential use for Raman‐based thin film research. At the same time TiO₂ (rutile), NdGaO₃, SrLaAlO₄, and SrTiO₃ single crystals exhibit multiple phonon modes accompanied by strong Raman background that substantially hinder Raman‐based thin film experiments. Copyright © 2014 John Wiley & Sons, Ltd.     

Activation energy of water vapor and oxygen transmission through TiNxOy/PET gas barrier films

Titanium oxynitride (TiN_xO_y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density was the varied parameter. Experimental results show that the deposited TiN_xO_y films with a thickness of about 55 nm have similar contents of TiN, TiN_xO_y and TiO₂ bonds, although they are deposited at different power densities. The TiN_xO_y films deposited at a lower power density have fewer internal defects and grain boundaries and possess higher activation energy and a lower rate of water vapor and oxygen transmission through TiN_xO_y/PET films.