High-Pressure Single-Crystal Neutron Scattering Study of Magnetic and Fe Vacancy Orders in （T1,Rb）：Fe4Se5 Superconductor

The recently discovered metal-intercalated iron selenide superconductors A2Fe4Se5 （A=K, Cs, T1- K, Rb, T1-Rb） （245） compounds, with Tc ～30K, have attracted much interest A high transition- temperature （TN ≈ 470-560K） and large magnetic moment （3.3μB/Fe） block antiferromagnetic （AFM） order exists in the superconducting samples. Mag- netic order-parameter experiences an anomaly when Tc is approached. The superconductors crystal- lize with a highly ordered √5 × √5 superstructure, in which the Fel site of the I4/m structure is only a few percents occupied and the Fe2 site is fully occupied. The non-superconducting samples at low-T also crystallize in the I4/m structure, while both Fe sites are fractionally occupied, since the numbers of the Fe vacancies in the samples and the vacant sites in the √5 × √5 pattern are mismatched. The partially ordered √5× √5 vacancy order becomes one of three competing phases for temperature below room temperature up to ～ 500K, namely, these sam- ples are phase-separated and in the miscibility gap 1lacier the n,mhi~nt condition.     

Anode and Cathode Spots in High-Voltage Nanosecond-Pulse Discharge Initiated by Runaway Electrons in Air

We report the experimental results with nanosecond-pulse discharges formed in the air gap between a fiat electrode and a sharp electrode. The appearance of anode and cathode spots on the electrodes is studied experimentally. It is considered that bright spots on the fiat cathode with positive polarity of the sharp electrode are formed due to the explosive electron emission on the cathode and the dynamic displacement current in the gap. It is also shown that with negative polarity of the sharp electrode, bright spots on the flat anode are formed after changing the polarity of the flat electrode due to the discharge oscillatory mode. Under these conditions, the explosive electron emission firstly forms on the sharp cathode. With negative polarity of the sharp electrode of the subnanosecond-pulse pulser, the runaway electron beam current is measured behind the anode foil with a time resolution of no more than 100ps.     

间隙对金属锡爆轰加载过程的影响

采用高能炸药透过钢板对锡样品开展爆轰加载实验,并通过数值模拟对实验结果进行验证,分析不同间隙对爆轰加载过程的影响。研究结果表明:亚毫米级别的样品间隙能对实验结果会产生显著影响;一方面锡样品与钢层间的间隙将导致冲击波在间隙表面发生强反射,反射稀疏波在钢层与炸药界面再次反射形成较强的后续压缩冲击波,进而导致锡样品的加载压力显著升高,另一方面,金属层间与炸药间的间隙将导致加载压力降低;相较于金属层间与炸药间的间隙,锡样品与钢层间的间隙对加载影响更严重,并且随着间隙尺寸变化,两种情况中间隙影响的变化趋势也有所差异。     

开式向心涡轮背部间隙流动特性的研究

对开式向心涡轮背部间隙流动特性进行计算分析,计算结果和实验符合较好。分析结果表明:背部间隙泄漏流量远小于叶顶间隙泄漏流量,但两者损失大小相当,可见背部间隙与叶顶间隙虽然在形式上相似,但流动特性及损失机理有所不同;背部机匣刮削效应增强了展向二次流强度,在吸力面附近出现较大的高熵区,同时背部间隙泄漏流在展向二次流的带动下源源不断向叶顶方向运动,与主流形成较强的掺混;相比之下,叶顶机匣刮削流和展向二次流相互抵消,叶顶间隙泄漏流被展向二次流限制在叶顶壁角附近,掺混损失相对较小。     

控制间隙元素含量对于钛合金低温力学性能的影响

本研究了新型超低间隙钛合金ＴＡ７－Ｄ（Ｔｉ－５ＡＬ－２．５Ｓｎ）在低温（１２Ｋ、２０Ｋ、７７Ｋ）及室温条件下的拉伸性能。实验结果表明，降低合金中间隙元素的含量，在基本不影响材料强度的前提下，有效地提高了材料的低温韧性。通过组织结构分析，较好地解释了ＴＡ７－Ｄ钛合金低温力学性能提高的原因。     

Anticrossing Gap between Pairs of the Subbands in AlxGa1-xN/GaN Double Quantum Wells

Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have been investigated by solving the Schroedinger and Poisson equations self-consistently. It is found that the anticrossing gaps are not influenced by the polarization-induced electric field in the DQWs. The anticrossing gaps decrease with increasing the width and the Al composition of the central barrier of the DQWs, as well as with the increasing well width of the DQWs. According to the results of the calculation, the anticrossing gaps can reach 150 meV in AlxGa1-xN/GaN DQWs. There is significant coupling between the two wells of the DQWs when the width of the central barrier of the DQWs is narrower than 2nm.     

“冷核聚变”的载体—间隙相

本文介绍了“冷核聚变”的载体──间隙相的一系列特殊的性质，包括间隙相中间隙的大小、金属－氢相图（主要是ｐｄ－Ｈ和Ｔｉ－Ｈ）、间隙相的结构、氢在金属中的扩散和金属－氢合金中间隙相的形核过程．这些知识有助于对“冷核聚变”的可能性进行探讨．     

双丝耦合强度对Z箍缩电磁辐射的影响

利用X射线二极管、光电倍增管和B-dot探针测量了峰值220 kA,0~100%上升时间100 ns的脉冲电流驱动平行双丝产生的电磁辐射。实验结果表明,不同波段的电磁辐射具有不同的辐射机制,热辐射是产生X射线的主要机制,可见光辐射来自热辐射和特征线辐射,微波辐射由非热电磁辐射机制产生。调节丝间距可改变双丝的耦合强度,当丝间距大于临界值时双丝解耦合,电磁辐射不依赖于丝间距;当丝间隙减小至低于临界值时,双丝耦合增强。增大双丝耦合强度不利于热辐射(X射线和可见光),而有利于非热电磁辐射(微波)。对于单丝电流约100 kA、上升时间100 ns的驱动条件,双丝解耦合的临界间距约为10 mm,双丝耦合强度对Z箍缩在不同频段的电磁辐射有影响。丝阵由多根金属丝组成,其最小的相互作用单元可分解为双丝相互作用。     

基于深度强化学习的近壁圆柱绕流控制

基于深度强化学习方法（deep reinforcement learning,DRL）,采用一对施加在圆柱表面的质量流量为零的射流,对Re=200,400,间隙比G/D=0.5,0.7,1.0,1.5,2.0的近壁圆柱进行主动流动控制研究。通过DRL方法获得不同参数下的射流控制策略与相应控制效果,并讨论了不同射流位置（90°,270°）、（90°,320°）、（90°,360°）对控制效果的影响。研究发现Reynolds数、间隙比和射流位置都对控制效果有重要的影响。射流位置为（90°,270°）时通过DRL控制可以有效降低阻力系数及其波动,控制后的圆柱尾迹被拉长且圆柱前后压差降低。射流位置为（90°,320°）和（90°,360°）的控制效果相似,都能使平均阻力系数有所降低,但控制位置的不对称性导致控制后的阻力系数波动较大。Reynolds数和间隙比的增大会增加控制射流的质量流量水平,在相同条件下,使用（90°,270°）的射流位置可以用相同的质量流量得到更好的控制效果。