二维材料范德华间隙的利用

Since their discovery, two-dimensional (2D) materials have attracted significant research attention owing to their excellent and controllable physical and chemical properties. These materials have emerged rapidly as important material system owing to their unique properties such as electricity, optics, quantum properties, and catalytic properties. 2D materials are mostly bonded by strong ionic or covalent bonds within the layers, and the layers are stacked together by van der Waals forces, thereby making it possible to peel off 2D materials with few or single layers. The weak interaction between the layers of 2D materials also enables the use of van der Waals gaps for regulating the electronic structure of the system and further optimizing the material properties. The introduction of guest atoms can significantly change the interlayer spacing of the original material and coupling strength between the layers. Also, interaction between the guest and host atom also has the potential to change the electronic structure of the original material, thereby affecting the material properties. For example, the electron structure of a host can be modified by interlayer guest atoms, and characteristics such as carrier concentration, optical transmittance, conductivity, and band gap can be tuned. Organic cations intercalated between the layers of 2D materials can produce stable superlattices, which have great potential for developing new electronic and optoelectronic devices. This method enables the modulation of the electrical, magnetic, and optical properties of the original materials, thereby establishing a family of 2D materials with widely adjustable electrical and optical properties. It is also possible to introduce some new properties to the 2D materials, such as magnetic properties and catalytic properties, by the intercalation of guest atoms. Interlayer storage, represented by lithium-ion batteries, is also an important application of 2D van der Waals gap utilization in energy storage, which has also attracted significant research attention. Herein, we review the studies conducted in recent years from the following aspects: (1) changing the layer spacing to change the interlayer coupling; (2) introducing the interaction between guest and host atoms to change the physico-chemical properties of raw materials; (3) introducing the guest substances to obtain new properties; and (4) interlayer energy storage. We systematically describe various interlayer optimization methods of 2D van der Waals gaps and their effects on the physical and chemical properties of synthetic materials, and suggest the direction of further development and utilization of 2D van der Waals gaps.     

晶粒取向和物相组成的电子背散射衍射测定

介绍了用扫描电镜中电子背散射衍射（ＥＢＳＤ）附件所进行的初步研究工作．这些工作表明,２Ｈ马氏体的基面由母相的一个｛２２０｝Ｐ面转变而来,一个自协作马氏体片群内的Ａ、Ｂ、Ｃ、Ｄ４个变体由母相的不同的｛１１０｝Ｐ面转变而来．用ＥＢＳＤ技术可测出它们之间的取向关系．ＥＢＳＤ技术所提供的结构信息与Ｘ射线能谱分析提供的化学成分信息相结合使微区物相鉴定的结果更为可靠．发现Ａｌ６２．５Ｃｕ２５Ｆｅ１２．５合金的铸态主要由λ－Ａｌ１３Ｆｅ４、二十面体准晶和β相３者组成．无间隙钢７５０℃再结晶后有两类晶粒,其中平坦晶粒具有有利于冷加工性的γ纤维显微织构．     

用场分析法求解速调管输出回路特性参数

 为解决速调管输出回路特性参数计算时遇到的困难,结合场分析的手段和3维电磁场模拟计算软件ISFEL3D后处理部分,提出了场分析法。理论分析表明,场分析法可用于计算单注单间隙、多注单间隙、单注多间隙和多注多间隙等各种速调管输出回路的谐振频率、间隙阻抗实部和外观品质因数等特性参数。通过对单注单间隙速调管输出回路的举例计算表明,场分析法的计算结果与反射相位法和等效间隙阻抗法的计算结果吻合较好,初步证实了该方法的可操作性和理论推导的正确性。     

叶轮顶部间隙对向心透平总体性能影响的研究

对微型燃机向心透平叶轮顶部间隙流动在级环境下进行了全三维粘性数值模拟．研究结果表明:顶部间隙小于 2％时,间隙每增加1％,级效率降低1．5％,而级通流能力有所降低;径向与轴向间隙变化对级性能影响有很大差别, 径向间隙增加对级效率降低的影响是轴向间隙增加的8．3倍,径向间隙增加使通流能力增强的程度是轴向间隙增加使通流能力减弱的4．2倍。此外,将间隙流场与文献报道试验结果进行了比较,差别主要在工作轮顶部区域。     

几种参数对磁流变抛光的影响

以所建立的磁流变抛光的数学模型为基础 ,通过实验研究了抛光时间、运动盘的速度、工件与运动盘形成的间隙大小、磁场强度等参数对磁流变抛光的影响。具体做法是改变磁流变抛光的一种参数 ,而使其余的参数保持不变 ,得出该参数与磁流变抛光去除函数关系的曲线图 ,进而揭示了工件的材料去除函数随该参数的变化规律。     

时空混沌系统的主动-间隙耦合同步

提出了离散系统中的主动-间隙耦合同步方法.该方法由同步相和自治相组成.在同步相,同步方案使得混沌系统趋于同步,而在自治相,两系统间的误差将迅速放大,导致失同步.但只要同步相足够大,最终可实现系统的准确同步.还从理论上讨论了同步条件,并利用该方法实现了耦合映象格子时空混沌系统中的混沌同步,给出了同步条件以及同步相与耦合强度的关系. 关键词：     

P掺杂6H-SiC的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波法,计算未掺杂与P替换Si、C以及P间隙掺杂6H-SiC的电子结构与光学性质。结果显示未掺杂的6H-SiC是带隙为2.052 eV的间接带隙半导体,P替换Si、C掺杂以及P间隙掺杂6H-SiC带隙均减小,分别为1.787 eV、1.446 eV和0.075 eV,其中P间隙掺杂带隙减小幅度最大。P替换掺杂6H-SiC使得费米能级向导带移动并插入导带中,呈n型半导体。P间隙掺杂价带中的一条能级跨入费米能级,因此在禁带中出现一条P 3p杂质能级,P间隙掺杂6H-SiC转为p型半导体。替换与间隙掺杂使得6H-SiC的介电函数实部增大,介电函数虚部、吸收光谱、反射光谱与光电导率红移,其中P间隙掺杂效果最佳。通过P掺杂材料的电导率增强,对红外波段的利用率明显提高,为6H-SiC在红外光电性能方面的应用提供有效的理论依据。     

间隙原子对ZnNb2O6光电特性影响的第一性原理研究

基于密度泛函理论第一性原理,研究Zn、Nb、O间隙原子对ZnNb2 O6体系光电特性的影响.分析显示:间隙原子对体系晶格畸变的影响与间隙原子几何尺寸有关.缺陷结构中,由于间隙原子电负性存在差异,也是产生晶格畸变的因素.光电特性分析显示:含有Zn、Nb间隙原子的体系表现为n型简并半导体.且Nbi表现出较强的介电效应,主要...     

民机操纵面极限环振荡特性试验研究

操纵面的极限环振荡是一种重要的气动弹性不稳定型态,其被诱发的速度可能远低于飞机的颤振稳定性包线速度.民用飞机设计中的质量平衡和非质量平衡操纵面,在服役过程中都曾出现过由于间隙导致的气动弹性稳定性降低以及结构损伤的情况.本文构建了带副翼操纵面的三维柔性机翼模型,开展了低速颤振风洞测试,试验中在副翼偏转自由度上引入可调大小...     

La10-x(SiO4)6O3-1.5x的合成及其导电性能的研究

利用溶胶-凝胶法在800 ℃合成了硅酸盐氧基磷灰石La10-x(SiO4)6O3-1.5x(x=0,0.17,0.33,0.50和0.67),经XRD表征所得产品为磷灰石相.以电化学阻抗谱研究了硅酸盐氧基磷灰石的导电性能,体系的电导率随着间隙氧和阳离子空位数量的增多而加大,La9.33(SiO4)6O2的电导率较La9.5(SiO4)6O2.25大,是由于前者有较多的阳离子空位所致,700 ℃时La10(SiO4)6O3的电导率为7.98×10-3 S·cm-1,比La9.33(SiO4)6O2的电导率提高了5倍.氧分压从105～1 Pa变化时电导率保持不变,证明硅酸盐氧基磷灰石在较宽的氧分压范围内为O2-导电.