ZI纵向计数数据模型的影响分析

基于EM算法和Laplace逼近, 本文给出了研究ZI (即含0较多的)纵向计数数据模型的影响分析方法. 为了识别含0较多的分组计数数据中的强影响点, 本文将ZI纵向数据模型中取值为0的数据赋予一定的权重; 而把随机效应看作缺失数据; 在此基础上引入EM算法, 从而应用完全数据对数似然函数的条件期望以及相应的$Q$距离函数进行影响分析; 并进一步应用Laplace逼近方法简化EM算法中的积分计算. 在此基础上, 基于数据删除模型和局部影响分析方法导出了适用于ZI纵向计数数据模型的诊断统计量. 本文也通过实际计数数据的例子验证了诊断统计量的有效性.     

Effect of Molecular Weight on Liquid Crystal Photoalignment by Photosensitive Polyester Containing Thrifluoromethyl Moieties

We investigate the liquid-crystal （LC） alignment direction on photoalignment films formed from photosensitive polyester containing thrifluoromethyl moieties （PPDA） with various molecular weights by crossed polarized optical microscopy. It is found that LC alignment behaviour changes with molecular weight of PPDA. The LC alignment on PPDA irradiated films with the highest molecular weight is homogeneous, while those with low and intermediate molecular weights are homeotropic. However, surface morphologies show weak dependence on molecular weight. The surfaces are smooth and there is no clear morphological anisotropy on these aligned films observed by an atomic force microscope. The surface energies of the irradiated films are also measured by using an indirect contact-angle method where both surface energy and its polar component, increase with increasing molecular weight. Different polar surface energies can be considered as a main reason for different alignment characteristics.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

Construction of 2Ⅲ^[m-（m-k）] Designs with the Maximum Number of Clear Two-factor Interactions

It is useful to know the maximum number of clear two-factor interactions in a_Ⅲ~(m-(m-k))design.This paper provides a method to construct a 2_Ⅲ~(m-(m-k))design with the maximum number of clear two-factorinteractions.And it is proved that the resulting designs have more clear two-factor interactions than thoseconstructed by Tang et al.Moreover,the designs constructed are shown to have concise grid representations.     

Average Property of Isospin Effects Induced by Neutron-Halo Nuclei

We study the average property of the isospin effects of reaction mechanism induced by neutron-halo nuclei within the isospin-dependent quantum molecular dynamics model. We find that the extended neutron density distribution for the neutron-halo projectile brings an important isospin effect into the reaction mechanism, which induces the decrease of nuclear stopping R; however, it induces the obvious increases of the neutron-proton ratio of nucleon emissions （n/p）nucl for all of the beam energies in this work, compared to the same mass stable colliding system.     

聚偏氟乙烯辐射效应的研究——II.晶区辐射损伤点的研究

研究了聚偏氟乙烯 (PVDF)晶体结构与辐射效应的关系 .利用不同的热处理条件 ,获得了 7种不同规整性、不同结晶度的样品 ;通过对其辐射效应的研究 ,探讨了材料结晶区和晶区内不同部位的辐射效应以及这些不同的结构对材料辐射效应的影响 .使用示差扫描量热分析 (DSC)测量样品零熵产生相变温度、结晶度等随吸收剂量的改变 ,以及不同退火条件样品的辐射效应 .讨论了PVDF样品晶体辐射损伤与样品结构的关系 .利用电子自旋共振谱仪 (ESR)测量不同辐照后样品残余自由基的浓度及这些残余自由基加热条件下的不同命运 .结合DSC分析及X射线衍射分析得到晶体辐射损伤是从晶体表面折叠圈区和晶体茎杆内部缺陷区同时开始的结论     

基团共轭效应研究Ⅱ：^13C核磁共振的化学位移与取代基的共轭效应强度

引言在定量和定性研究有机化合物的结构与性质的关系中,最广泛使用的是Hammett等所提出的σ_m、σ_p等取代基常数以及基团的诱导(场)效应和共轭效应常数。在建立基团的共轭效应常数方面,人们做了大量的工作,但多数工作是基于对基团的Hammett常数σ的人为分解上,建立的模型和分解方式(系数因子)不同,则得到不同的结果。另一方面纯理论计算工作大多引入较多参数,使计算复杂和使用不便。作者曾在建立表征诱导效应大小的     

单个波长到多个波长的变换实验

报道一种波长变换的新方法.采用此方法不需要任何泵浦光便能够直接将信号光变换成在特定谱宽内的任意多个任意波长的变换光,这对于将来的波分复用光网络提供了较大的方便.此波长变换的原理是利用色散位移光纤的非线性效应产生超连续光谱(SC)信号,由于这种SC信号携带有变换光信号,对这种连续谱进行滤波便能够得到所需要的任意频率的变换信号.此变换方式具有变换频带宽,偏振不敏感的优点。     

测试温度对nc-Si∶H膜光致发光特性的影响

利用常规等离子体化学气相沉积（ＰＥＣＶＤ）工艺制备了ｎｃ－Ｓｉ∶Ｈ膜，并对其光致发光（ＰＬ）特性从１０～２５０Ｋ温度范围内进行了变温测量．实验结果指出，随着测试温度升高，ＰＬ峰值能量发生了５４ｍｅＶ的红移，ＰＬ强度在Ｔ＞８０Ｋ后呈指数下降趋势．ＰＬ峰值能量的红移起因于带隙的收缩，而ＰＬ强度的减弱则是由于非辐射复合起了主导作用．     

超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展，其中包括扭快光电材料的特性、高速光电器件的基本原理，着重介绍了若干主要的用快光电测量技术．