InGaAs/GaAs应变量子阱的发光特性研究

利用低压金属有机化学气相沉积技术(LP-MOCVD)生长InGaAs/GaAs单量子阱(SQW),通过改变生长速率、优化生长温度和V/III比改善了量子阱样品的室温光致发光(PL)特性。测试结果表明,当生长温度为600℃、生长速率为1.15μm/h时,生长的量子阱PL谱较好,增加V/III比能够提高量子阱的发光强度。实验分析了在不同的In气相比条件下,生长速率对量子阱质量的影响,利用模型解释了高In气相比时,随着生长速率增加PL谱蓝移现象消失的原因。     

新发现接通了基因组调控的一条逻辑链

生物学一条被勘察了无数次的信号通路可能还藏有不为人知的功能:防止蛋白生产线出现瓶颈效应。大肠杆菌需摄入含碳丰富的养分才能生长,并按照固定的顺序选择碳源。例如,当葡萄糖充足时,它就会停止合成用来运输和分解其他碳源(如乳糖或麦芽糖)的酶。20世纪40年代,剑桥大学生化学家Helen Epps和Ernest Gale观察到此现象,并将它命名为葡萄糖效应。现在知道其他糖类也能触发类似的响应,它们被统称为分解代谢抑制效应。     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

化学链燃烧中Fe氧化过程产物层生长特性

利用TGA、SEM研究了化学链燃烧中Fe氧化反应过程产物层的生长机理,以及产物层形貌对化学反应动力学的影响。考虑了不同的反应条件,包括氧化时间、反应温度、O_2浓度的影响。实验结果表明,氧化产物呈三维岛状生长,反应初期产物岛较小但密度较大,随着反应的进行,产物岛不断长大,但密度先减小后增加;温度及O_2浓度对产物层生长均有影响。产物岛的成核与生长改变了产物层的表观形貌,减小了表观反应速率。     

分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究

应用深能级瞬态谱(DLTS)技术详细研究分子束外延生长的Pseudomorphic—high electron mobility transistor(P-HEMT)结构中深能级行为。样品的DLTS表明,在P-HEMT结构的n-AlGaAs层里存在着较大浓度(10¹⁵-10¹⁷cm^-3和俘获截面(10^-16cm²)的高温电子陷阱。它们直接影响着器件性能。高温电子陷阱的产生可能与AlGaAs层里的氧     

基于多元通讯集中控制器的LED植物促生长智能照明控制系统

LED可以高效地释放特定波长的光线,促进植物光合作用;然而市场上较多采用的植物生长灯缺乏系统化的控制,订制成本高,可靠性和灵活性低;为了解决这些问题,开发了一套LED植物促生长智能照明控制系统;该系统采用集中分布式的架构,拓展了可控制的地域范围和优化了系统的响应能力;特别是系统采用了多元通讯模式,巧妙地融合了多种数据传输方式,其中包括多种远程通讯和局域网络通讯,极大地提高了控制系统的灵活性和可靠性;在该模式下,控制设备中嵌入了可配置的优先级列表,集中控制器实时检测并动态地选择高优先级且连接状态良好的通讯方式;在局域无线组网通讯中,提出了一套具有自愈和自维护功能的系统组网策略,极大地提高了下行网络的稳定程度;最后搭建了实验平台,测试了相关功能,试验结果良好;该控制系统具有高可靠性和高灵活性的特点,适应多种农业现场状况,拥有良好的市场潜力。     

Chiral Symmetry Breaking During Growing Process of NaClO3 Crystal under Direct-Current Electric Field

We investigate the influence of dc electric field on chiral symmetry breaking during the growing process of NaClO3 crystal. Nucleation and growth of NaClO3 are completed from an aqueous solution by a fast cooling temperature technology. A pair of polarization microscopes are used to identify a distribution of chiral crystals. Experimental results indicate that the dc electric field has an effect on distribution of chirality, but the direction of the dc electric field is not sensitive to the chiral autocatalysis and selectivity, i.e. the nature convection driving by the gravity does not play an important role on a thin layer of NaClO3 solution. The experimental phenomena may be elucidated by the ECSN mechanism.     

通过边界积分方程方法研究在不均一有裂纹的统一体中的波衍射(英文)

pacc:0200,8100,4210h Wavediffractionininhomogeneouscracked continuawithadepth-dependentshearmodulus andunderconditionsofplanestrainisstudied herein.Arestrictedtypeofinhomogeneityiscon sidered,wherePoisson sratioisfixedatone-quarter,whilebothshearmodulusan…     

ZnO/A1lN/Si(111)薄膜的外延生长和性能研究

用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜.引入低温AlN缓冲层以阻止衬底氧化、缓解热失配和晶格失配.薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及AlN(000l)的衍射峰.ZnO/AlN/Si(111)薄膜C方向晶格常量为0.5195 nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460"和1105";干涉显微镜观察其表面有微裂纹,裂纹密度为20 cm-1;3 μm×3μm范围的原子力显微镜均方根粗糙度为1.5 nm激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h.低温10 K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线.所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.