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A Thermodynamic Cavitation Model for Cavitating Flow Simulation in a Wide Range of Water Temperatures 下载免费PDF全文
A thermodynamic cavitation model is developed to simulate the cavitating water flow in a wide temperature range. The thermal effect on bubble growth during cavitation is introduced in the developed model by considering both pressure difference and heat transfer between the vapor and liquid phase. The cavitating turbulent flow over a NACA0015 hydrofoil has been simulated at various temperatures from room temperature to 150°C by using the present cavitation model, which has been validated by the experimental data. It is seen that the thermodynamic effects of cavitation, vapor depression and temperature depression are much more predominant in high temperature water compared with those in room temperature water. These results indicate that the proposed thermodynamic cavitation model is reasonably applicable to the cavitating water flow in a wide temperature range. 相似文献
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High-Quality Large-Sized Single Crystals of Pb-Doped Bi2Sr2CuO6+δ High-To Superconductors Grown with Traveling Solvent Floating Zone Method 下载免费PDF全文
High quality Pb-doped Bi2Sr2Cu06+δ (Pb-Bi2201) single crystals are grown by the traveling solvent floating zone technique, with dimensions as large as - 50 min× - 5.0 min ×- 2 mm. The Pb-Bi2201 single crystals with different doping levels are obtained by the annealing process which covers a wide doping range of the overdoped region. We describe in detail the growth and annealing procedures and the characterization and physical property measurements of the Pb-Bi2201 crystals. The availability of these crystals provides a good opportunity to experimentally investigate high-To cuprate superconductors, particularly in the overdoped region. 相似文献
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采用固相反应银作催化剂成功合成出棒状结构的稀土硼酸盐Tb(BO2)3发光材料. 利用X射线衍射和区域电子衍射研究了产物的结构特性,在700 oC煅烧时,Tb(BO2)3纳米棒具有良好晶形. 透射电镜分析表明,Tb(BO2)3纳米棒直径为100~200 nm,厚度为30~50 nm,长约3 μm. 基于Ag纳米颗粒附在Tb(BO2)3纳米棒的顶端和中部的事实,探讨了Tb(BO2)3纳米棒的生长机理. 荧光光谱研究表明,在369 nm紫外光激发下,Tb(BO2)3能发出Tb3+的特征绿色荧光,发射主峰位于546 nm,归属于5D4→7F5跃迁. 同时,也探讨了煅烧温度对产物的结构、形貌以及发光性质的影响. 相似文献
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Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films 下载免费PDF全文
Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemicaJ vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000℃ and the carbonized time of 5 min. Under these optimized carbonization conditions, thick epitaxial films of about 15 μm with good crystalline quality and low residual strain can be obtained. 相似文献
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