热压电变分原理

热释电介的许多传感器及机敏结构或中的关键材料，本文系统地讨论了在基础理论和数值计算中极具重要地位的各类变分原理，包括准静态变分原理、动态变分原理和关于固有频率的变分原理。最后建立了关于静态压电要板的变分原理，并由此导出了各向异性压电板的控制方程及边界条件。     

压电材料平面应力状态的直线裂纹问题一般解

研究了含直线裂纹系的压电材料平面应力问题单个裂纹和双裂纹问题的封闭解答表明，在裂纹尖端，应力、电场强度和电位移有１／２阶的奇异性并与前人结果比较了产生电场奇异性的物理因素     

压电介质二维边界积分方程中的基本解

由于压电介质的变形－电场耦合效应及压电响应的各向异性，使解析求解压电介质问题的工作变量十分复杂，若采用边界元数值方法求解，必须具备积分方程中的基本解，本文根据电磁场方程及连续介质力学的耦合性质论层出了二维无限域中分别在单位力及单位电荷载作用下的位移场，电势场、应力场和电位移场的解，从而确立了边界积分方程中所必需的八个基本解。     

塑封硅器件中介电薄膜的温湿效应分析(英文)

随着铜互连以及low-k电介质在超大规模集成电路中地广泛使用,low-k电介质的机械完整性及其对互连可靠性变得更加重要。影响介电膜的机械完整性和互连可靠性的因素包括介电膜的工艺制程,芯片与封装材料的相互影响,以及环境温度和湿度的影响。本文研究集中于了解环境温度和湿度对塑封硅器件中介电薄膜的可靠性影响。采用快速温度和湿度实验条件,对塑封硅器件中介电薄膜受水分和温度损伤的敏感性进行了分析。运用商业有限元(FEA)分析软件,对水分在塑封材料和硅器件中的扩散过程进行了建模及仔细分析。并对硅器件周边密封圈的防水分扩散效力进行了研究。通过这一系列实验与分析,对塑封硅器件中介电薄膜的温湿效应有了完整地了解,并提出和建立了相关的物理模型和经验公式。运用这物理模型和经验公式可对在各种使用环境温度和湿度条件下,塑封硅器件中介电薄膜的可靠性进行评估及分析。     

计算电介质电场的一种方法

通过电介质和磁介质的类比，以较简捷的方法得出了文〔１〕曾得出的以“流”的观点计算电场的方法。     

关于电介质的物理图象及其应用的讨论

给出一种新的电介持物理图象，并阐明电介质三种物理图象的意义以及它们的区别与联系。     

Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials

Electron plasma induced by a focused femtosecond pulse （130 fs, 800 nm） in dielectric materials （Soda Lime glass, K9 glass, and SiO2 crystal） is investigated by pump-probe shadow imaging technology. The relaxation of the electron plasma in the conduction band is discussed. In SiO2 crystals, a fast self-trapping process with a trapping time of 150fs is observed, which is similar to that in fused silica. However, in Soda Lime glass and K9 glass, no self-trapping occurs, and two decay processes are found： one is the energy relaxation process of conduction electrons within several picoseconds, another is an electron-hole recombination process with a timescale of lOOps. The electron collision time T in the conduction band is also measured to be in the order of 1 fs in all of these materials.     

电场中电介质排列序的力学机制——电场线可以借助头发屑排列显示的实验原因

在中学物理实验教学中,为说明电场线形状,常采用在蓖麻油中放置头发屑(电介质),接上高压电(约20 kV)后,观察到高压接线柱周围的发屑呈电场线状排列序,这种电场线状排列序产生的物理原因何在?笔者通过的研究探索提供一点力学机制方面的解释.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.