ZrB2-SiC-Csf超高温陶瓷复合材料碳纤维损伤抑制研究

采用放电等离子烧结和热压烧结制备了短切碳纤维(Csf)增韧ZrB2-SiC超高温陶瓷复合材料(ZrB2-SiC-Csf),研究了制备工艺对ZrB2-SiC-Csf复合材料微结构演变、力学性能和抗热冲击性能的影响.结果表明:烧结温度是导致碳纤维结构损伤的主要因素,降低烧结温度能有效抑制碳纤维的结构损伤.采用纳米ZrB2粉体在1450 ℃低温热压烧结制备的ZrB2-SiC-Csf复合材料在断裂过程中表现出纤维拔出、纤维侨联和裂纹偏转增韧机制,其临界热冲击温差高达741 ℃,表现出良好的力学性能和优异的抗热冲击性能.从热力学的角度阐明了ZrB2-SiC-Csf复合材料中碳纤维结构损伤的机理,并揭示了该类材料的烧结温度应低于1500 ℃.     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.     

THEORY OF DIELECTRIC ELASTOMERS

In response to a stimulus, a soft material deforms, and the deformation provides a function. We call such a material a soft active material （SAM）. This review focuses on one class of soft active materials： dielectric elastomers. When a membrane of a dielectric elastomer is subject to a voltage through its thickness, the membrane reduces thickness and expands area, possibly straining over 100%. The dielectric elastomers are being developed as transducers for broad applications, including soft robots, adaptive optics, Braille displays, and electric generators. This paper reviews the theory of dielectric elastomers, developed within continuum mechanics and thermodynamics, and motivated by molecular pictures and empirical observations. The theory couples large deformation and electric potential, and describes nonlinear and nonequilibrium behavior, such as electromechanical instability and viscoelasticity. The theory enables the finite element method to simulate transducers of realistic configurations, predicts the efficiency of electromechanical energy conversion, and suggests alternative routes to achieve giant voltage-induced deformation. It is hoped that the theory will aid in the creation of materials and devices.     

Study of a narrowband reflection filter with multi-channels

Reflection filters have various applications in optical communication and other systems.In this letter,we propose a narrowband high-reflection filter composed of dielectric and metallic layers,in which an optimized filter combined with an admittance-matching layer with broad stop band is achieved.The structure can be expressed as Sub ｜ （HL）13H2L（HL）313Cr0.84H ｜ air,with full-width at half-maximum （FWHM） bandwidth of 2.5 nm.Based on this structure,reflection filters with multi-peaks are presented,and the law of distribution of peak positions is drawn.     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

Mach-Zehnder Interferometer Based on Coupled Dielectric Pillars

We propose a Mach-Zehnder interferometer （MZI） based on coupled dielectric pillars. It is composed of single-row pillar coupled waveguide modulating arms and three-row pillar waveguide 3 dB couplers. The slow light property and transmission loss of the single-row pillar modulating arm are optimized by the plane wave expansion method. A short 3dB coupler is designed based on the modes transformation in three-row pillar waveguide. Finite difference time domain simulations prove the validity of this MZI and show that it has low insertion loss of 1.1 dB and high extinction ratio of 〉 12 dB.     

Mechanism of Striation in Dielectric Barrier Discharge

The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision （PIC-MCC） model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

也论电位移矢量D仅与自由电荷分布有关的条件

电位移矢量是一辅助矢量，它的引入为计算一些介质问题提供了方便．但由于普物中的静电场介质问题，绝大多数为均匀介质问题，这就使学生常常产生“电位移矢量仅与自由电荷分布有关”的误解．文献［１］对此问题作了说明，但其推导和结论都有些不足．本文试图给出Ｄ仅与电荷分布有关的一般条件式，并对各种电介质进行分析，最后对有关问题做出简略说明．