生长温度对碳纳米管阴极场发射性能的影响

碳纳米管(Carbon Nanotubes,CNTs)场发射平面显示器(Field Emission Display,FED)与其他显示器比较显示了其独特优点,被认为是未来理想的平面显示器之一。碳纳米管阴极作为器件的核心部分,其性能的好坏直接影响显示器的性能。针对30~60英寸(76.2~152.4cm)大屏幕显示器所用的厚膜工艺,即采用丝网印刷法制备了碳纳米管阴极阵列,研究了化学气相沉积法在不同温度下生长的CNTs的场发射电流-电压特性,找到了适合FED用碳纳米管的最佳生长温度。结果表明生长温度越高(750℃),CNTs场发射性能越好。并用荧光粉阳极测试这些CNTs的场发射发光显示效果,验证了上述结论。     

QGP热力学势中的屏蔽和阻尼效应

采用含有Debye屏蔽和阻尼效应的胶子谱函数, 在实时温度QCD理论的框架下计算了夸克胶子等离子体中有效二圈热力学势, 得到了依赖于胶子屏蔽和阻尼作为物理参数的解析结果. 数值计算表明, 我们的结果与格点QCD理论计算的最新结果在温度T≥2T_c时相符.     

Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.     

连续激光诱导Zn/InP掺杂过程中温度分布的解析计算

在实验的基础上，分析表面蒸发Zn的InP样品在连续激光诱导下掺杂Zn过程.在一维热传导问题的第三类边界条件下，给出激光辐照有限厚双层材料Zn/InP温度分布的一种直观简洁的解析形式. 关键词： 激光诱导掺杂 Zn/InP 温度分布     

Soliton Solution of SU（3） Gauge Fields at Finite Temperature

Starting from a soliton model of SU（3） gauge fields, we investigate the behaviour of the model at finite temperature. it is found that colour confinement at zero temperature can be melted away under high temperatures.     

有限温度下的K介子凝聚

我们把Brown等讨论在零温时K介子凝聚的工作推广到有限温度.结果表明温度对于原子核的临界密度影响不大,新物质相有可能在重离子反应中形成.     

温度对PSⅡCP4 7/D1/D2/Cytb559复合物荧光光谱特性的影响

采用激励光源为514.5 nm的分幅扫描单光子计数荧光光谱装置对经20℃、42℃和48℃不同温度处理后的反应中心复合物CP47/D₁/D₂/Cyt b559的荧光光谱特性进行了研究.经解析,获得不同温度处理后,CP47/D₁/D₂/Cyt b559复合物最大峰值未发生变化,均在682 nm,说明Chla670的能量都由Chla682接收,但损耗愈来愈小,在48℃时,损耗程度最小,而其荧光百分比未发生多大变化.振动副带～700 nm和～740 nm的中心波长都发生蓝移,在不同温度下分别为:20℃ 703 nm,749 nm;42℃ 697 nm,744 nm;48℃ 694 nm,740 nm.因此可以推测温度的升高,影响了CP47/D₁/D₂/Cyt b559色素蛋白的二级结构以及色素分子的空间位置,使最大峰值处的荧光强度逐渐降低,振动副带逐渐蓝移.42℃的温度已造成影响,48℃影响较大.     

高温超导体Josephson阵列在磁场中的微波响应与磁通涡旋激发

本文从分析相变电阻率 ρP 和磁通蠕动电阻率 ρF 出发 ,指出当T小于某一温度T0 时 ,ρF>ρP,而当T >T0 时 ,ρF 远小于 ρP,并进一步分析了 ρF 与 ρP 随温度的变化率分布图 ,得出磁通蠕动电阻率 ρF 随温度的变化率分布图跟微波响应曲线具有相似的分布特征 ,结果表明 :高温超导体的非平衡微波响应机制可能与磁通涡旋的激发有关 .     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.