混合稀土EuBaCuO体系的高温超导电性研究

本报道了采用三种不同含量的混合稀土Ｅｕ２Ｏ３（Ｅｕ２Ｏ３的含量分别为７０％，７９．９８％，９０％）为原料，利用固态反应法制备混合稀土Ｅｕ－Ｂａ－Ｃｕ－Ｏ体系超导体样品的工艺；给出了高温超导电性测量和Ｘ射线粉末衍射及扫描电镜分析结果。     

用原子位形几率波理论研究插层化合物MxTX2中M离子的有序结构

本文就插层化合物M_xTX₂中占据八面体间隙的M离子建立了离子-空位格气模型.用原子位形几率波理论研究了M离子的有序结构,得到了3种最稳定的有序结构,并定量地分析了相互作用参数对有序结构形成的决定作用.最后对已有实验结果进行了分析和讨论.     

Theoretical Design of High-spin Organic Molecules with —^＊N—S— as a Spin-containing Fragment and Heterocycle as End Groups

IntroductionDesigns and syntheses of organic molecules withvery high-spin ground states have been a topic of greatinterest[1—8].One of the rational approaches to desig-ning high-spin molecules,which has been proposedand studied by several groups[9,10],in…     

Equation of State of Dense Liquid Nitrogen in the Region of the Dissociative Phase Transition

We have measured the equation of state for liquid nitrogen compressed dynamically to a pressure of 10-60 GPa by employing a two-stage light-gas gun.The data show a continuous phase transition above the shock pressure of 33GPa,as indicated previously by shock wave experiments.A theoretical model has been derived to examine the experimental data by inducing a molecular dissociative fraction.According to theoretical and experimental date the phase transition was thought to be a molecular dissociative phase transition.     

聚芳香杂环甲烯的三阶非线性光学效应与时间分辨光克尔效应

合成了一系列聚芳香杂环甲烯,包括聚吡咯甲烯和聚噻吩甲烯.采用四波混频法研究材料的共振三阶非线性光学效应(λ＝532nm),其共振二阶超分子极化率γ三阶非线性光学系数分别达到10^-30esu和10^-8esu.选择具有良好溶解性、成膜性的聚吡咯对二甲氨基苯甲烯(PPDMAB),采用飞秒时间分辨光克尔效应方法研究材料的非共振三阶非线性光学效应(λ=790nm).实验表明,翠绿亚胺碱溶液的光克尔信号仅表现一超快响应的成分,归功于π电子云扭转产生的非共振激发.PPDMAB的非共振二阶超分子极化率γ三阶非线性光学系数分别达到γ=5.78×10^-32esu和χ⁽³⁾=1.26×10^-10esu.     

Multiple—Scattering of Near—Edge x—ray Absorption Fine Structure of Sulphur—Passivated InP（100） Surface

We use the multiple-scattering cluster method to calculated the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface.The physical origins of the resonances in the NEXAFS have been unveiled.It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms.The studies show that two S-S dimers with the bond lengths of 2.05A and 3.05A coexist in the surface,meanwhile the bridge and antibridge site adsorption of single S could not be ruled out.We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant discorder.