古生物群遗迹化石的三维数字化测量

对古生物化石进行数字化建档,为古生物化石的长久保存、研究和复原提供了一个切实可行的办法。阐述了非接触式激光扫描仪的测量原理,并利用其对罗平古生物化石群中分布在120m2范围内的古生物足迹化石进行了数字化测量,采用大视场WIDE和小视场TELE镜头交替使用的方法获取全场和单一足迹化石三维点云数据,再利用三维数据处理PolyWorks软件将两个镜头的三维数据进行对应的嵌入融合,最终测量结果既能全面记录足迹整体分布,真实反映古生物爬行运动轨迹,又能精细反映足迹局部特征。结果表明提出的对大面积野外待测对象的测量方法,为化石野外测量、三维数字化、数字存储提供了可行方案。     

无人机健康诊断知识库建立研究

针对无人机健康诊断系统的设计,研究了健康诊断专家知识库的建立方法。介绍了基于规则的专家知识库的含义及其对无人机设计的要求,阐述了故障树与故障模式判据表的形成方法。故障树分析基于故障因果逻辑,逐层找出故障事件的原因,保证专家知识逻辑上的完备性。故障模式判据表将抽象的专家知识具体化为多个能够在工程上应用的要素。提出了一种故障树分析与故障判据规则相结合的建立健康诊断专家知识库的方法。从某型大气数据系统的组成及原理出发,以大气数据系统真空速失效为顶事件,构造了故障树和故障模式判据表。结果表明,结合故障树和故障模式判据表格构造的专家知识库清晰、简洁,具有很高的工程实用价值,能够应用于无人机健康诊断系统的设计。     

有机铁磁界面自旋极化接触构型效应

基于第一性原理,研究了三种不同的接触构型垂直吸附在镍表面的苯双硫分子的界面自旋极化.结果表明界面自旋极化强烈依赖于接触构型,接触构型的变化可使自旋极化由正值变为负值.通过分析投影态密度,发现界面处镍原子的3d轨道与硫原子的sp³杂化轨道发生了轨道杂化.模拟机械可控断裂结实验中的界面吸附构型,根据计算的界面自旋极化,利用Julliere模型得到磁电阻约为27%,与实验测量结果较为符合.     

双分散颗粒体系在临界堵塞态的结构特征

堵塞行为是颗粒体系中一种常见的现象,其力学性质与堆积结构的关联非常复杂.本文采用离散元法研究了由两种不同半径颗粒组成的二维双分散无摩擦球形颗粒体系在临界堵塞态所呈现的结构特征,讨论了大小颗粒粒径比与大颗粒百分比对临界堵塞态的影响.数值模拟结果表明,当粒径比小于1.4时,临界平均接触数与大颗粒百分比关系不大,当粒径比大于1.4时随着大颗粒百分比的增大临界平均接触数先减小再增大.而临界体积分数在粒径比小于1.8时随着大颗粒百分比的增加先减小后增大,大于1.8时又基本不随大颗粒百分比而变化.大颗粒百分比在接近0或1时,系统近似为单分散体系,临界平均接触数与体积分数基本不随半径比的增大而变化;在接近0.5时,临界平均接触数随着半径比的增大逐渐减小,而临界体积分数则是先减小后增大.文中对大-小颗粒这一接触类型的百分比也进行了探讨,其值随着大颗粒百分比的增大呈二次函数的变化趋势,粒径比对这一变化趋势只有较小的影响.     

通道调制型偏振成像系统的波段宽度限制判据

通道调制型偏振成像技术是一种体积紧凑、空间分辨率高且能够实时获取全偏振信息的新型偏振成像探测技术. 但该技术目前只能实现准单色光的全偏振探测, 严重制约了其实用化. 本文首先对宽带光通道调制型偏振成像出现混叠现象的原因进行了分析, 得出载波频率是限制波段宽度的主要因素. 据此在空间频谱域上分析并推导了通道调制型偏振成像系统的光谱宽度限制判据公式, 同时通过模型仿真得到了系统的极限有效光谱范围, 与理论推导公式结果进行了对比分析, 验证了判据的准确性. 基于该判据可预测给定通道调制型偏振成像系统的有效工作波段, 同时还可为扩展系统波段宽度提供理论支撑.     

电磁继电器触点参数的测试

本文介绍了电磁继电器触点电参数的测试方法，包括接触电阻、绝缘电阻参数测试。     

Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.     

源、漏到栅距离对次亚微米ggNMOS ESD保护电路鲁棒性的影响

基于对静电放电(electrostatic discharge,ESD)应力下高电压、大电流特性的研究,本文通过优化晶格自加热漂移-扩散模型和热力学模型,并应用优化模型建立了全新的0.6 μm CSMC 6S06DPDM-CT02 CMOS工艺下栅接地NMOS (gate grounded NMOS,ggNMOS)ESD保护电路3D模型,对所建模型中漏接触孔到栅距离(drain contact to gate spacing,DCGS)与源接触孔到栅距离(source contact to gate sp 关键词： 栅接地NMOS 静电放电 漏接触孔到栅的距离 源接触孔到栅的距离     

Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal？insulator-metal （MIM） structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.     

Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level EL related to the cathode work function Wc at a given energy gap on the opencircuit voltage Voc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function Wc for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the builtin voltage. Additionally, it is worth noting that a significant improvement to Voc could be made by selecting an organic material which has a relative high LUMO level （low ｜EL｜ value）. However, Voc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exeiton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices.