Photodetachment of H- Near a Dielectric Surface

Using the closed orbit theory, the photodetachment cross section of H- near a dielectric surface has been derived and calculated. The results show that the dielectric surface has great influence on the photodetachment process of negative ion near the ionization threshold. Above the ionization threshold, the photodetachment cross section starts to oscillate. With the increase of the energy, the oscillating amplitude decreases and the oscillating frequency increases. The oscillation in the photodetachment cross section of H- in the presence of a dielectric surface is either larger or smaller than the photodetachment of H- without the surface. As the photon energy is larger than the critical value Epc, the oscillatory structure disappeared and the cross section approaches to the case of the photodetachment of H- without any external fields. For a given detached-electron energy, the photodetachment cross section becomes decreased with the increase of the ion-surface distance. Besides, the dielectric constant has great influence on the photodetachment of H-. With the increase of the dielectric constant, the oscillation in the cross section becomes increased. As the dielectric constant increases to infinity, the cross section is the same as the photodetachment of H- near a metal surface. This study provides a new understanding on the photodetachment process of H- in the presence of a dielectric surface.     

A fast luminosity monitor for BEPCⅡ

The fast luminosity monitor counting the γ photons above a given energy threshold emitted from radiative Bhabha scattering has been operated in the BEPC Ⅱ to measure the relative luminosity bunch by bunch for the first time and used successfully in beam tuning of BEPC Ⅱ. In the relative mode the monitor is able to deliver the relative luminosities with an accuracy of 0.8 %. By steering the electron beam while observing the counting rate changes of the monitor the horizontal and vertical sizes of the bunch spots can be estimated as： Sxe＋ =Sxe =0.356 mm, Sye＋ =Sye- =0.011 mm.     

Employing a Cerenkov detector for the thickness measurement of X-rays in a scattering background

The variation in environmental scattering background is a major source of systematic errors in X- ray inspection and measurement systems. As the energy of these photons consisting of environmental scattering background is much lower generally, the Cerenkov detectors having the detection threshold are likely insensitive to them and able to exclude their influence. A thickness measurement experiment is designed to verify the idea by employing a Cerenkov detector and an ionizing chamber for comparison. Furthermore, it is also found that the application of the Cerenkov detectors is helpful to exclude another systematic error from the variation of low energy components in the spectrum incident on the detector volume.     

Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime

Ta2O5 films are deposited on fused silica substrates by conventional e-beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy （AFM） and x-ray photoelectron spectroscopy （XPS）. The calculation of electron structures of Ta2O5 and Ta2O5-x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold （LIDT） is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation （I（λ）=aλm）, which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.     

带有非线性传染率的具有阶段结构的SI传染病模型

对带有非线性传染率的具有阶段结构的SI传染病模型进行了讨论,得到了传染病最终消除和成为地方病的条件.     

一类具有时滞传染病模型的稳定性

讨论了具有双时滞的SIS传染病模型.研究了一个边界平衡点的全局稳定性和正平衡点的局部稳定性,得到了传染病最终消失和成为地方病的阈值.     

辐照损伤模拟中的Zr 原子势函数

以金属Zr 的一种嵌入原子形式(EAM) 的势函数为基础,通过引入一个调制函数的办法,在不同范围内修改了EAM 势函数的对势部分和原子电子密度分布部分,然后采用分子动力学方法计算点缺陷(间隙原子(SIA) 和空位) 形成能和初级离位原子(PKA) 的阈值能,从而探讨这些物理量对势函数的不同部分的敏感程度。计算结果表明:势函数的对势部分长程范围内的形式对缺陷的形成影响较小,其短程范围的形式对SIA 的形成比对空位的形成影响程度更大;对于PKA 的阈值能,其敏感区域来自于势函数的对势部分和原子电子密度分布的短程范围部分,但在不同晶向上的PKA 的阈值能对势函数的敏感程度有所不同。这些研究结果对于在研究Zr 金属的辐照损伤中势函数的选择或构建有指导意义。For the purpose of detecting the sensitive parts of an embedded atom method(EAM) potential which is considered to be used in molecular dynamics simulation of radiation effects of Zirconium, we introduce a modulation function to modify the pairwise potential and the atomic electron-density distribution of the EAM potential. Based on the modified potential function, the formation energies of the self-interstitial atom (SIA) and the vacancy atom are calculated as well as the displacement threshold energy of primary knock-on atom (PKA). The results indicate that the short range part of the pairwise potential has more greater influence on the SIAs formation than the vacancy formation. The defect formation energies are also very sensitive to the behavior of the atomic electron-density function in the range which is close to the cutoff distance. The displacement threshold is sensitive to the short range behaviors of both the airwise potential and the atomic electron-density function, however, the sensitivity is strongly dependent on the crystal-direction.     

基频HfO2/SiO2高反射薄膜激光损伤生长特性

以1064 nm波长作用下的HfO2/SiO2高反射薄膜为研究对象,研究了高反射薄膜在损伤生长过程中分层剥落初始损伤结构的变化规律、损伤形貌特征和损伤生长阈值等特性。实验结果表明:分层剥落初始损伤结构的横向尺寸随激光能量密度的增加呈分段线性增长,破斑沿纵向拓展的损伤生长阈值是沿横向拓展的损伤生长阈值的2倍以上,初始损伤结构横向尺寸的生长率与能量密度呈指数关系,且生长阈值随着辐照次数的增加显著降低。     

考虑意识对带媒介的SIS模型中疾病传播过程的影响

在无标度网络上,研究意识对带媒介的SIS模型中疾病传播过程的影响.最后的结果表明接触意识与局部意识能增加流行病阈值,而全局意识与媒介意识不能.     

基于谱分析的DNA序列识别算法研究

对基于谱分析的DNA序列识别中相关问题建立了数学模型,并进行了计算及结果分析.提出了一种基于频数二次型的功率谱快速算法和基于帕斯瓦尔定理的信噪比快速算法,建立了基于模糊逻辑的自适应阈值模型,提出了基于重复序列的边界搜索算法,最后利用谱分析对基因突变中的伪鞍部进行了识别.