SrO/Si(100)表面去氧过程的研究

借助高温扫描隧道显微镜和光电子能谱技术,深入研究了SrO/Si(100)表面向Sr/Si(100)再构表面的动态转化过程.Sr/Si(100)再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中,样品在500 ℃的退火温度下,表面出现SrO晶化的现象;在550—590 ℃的退火温度下,SrO/Si(100)开始向Sr/Si(100)转化,界面和表面上的氧以气态的SiO溢出,使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性,这是由于表层硅原子发生断键重排,从而在表面出现悬 关键词： SrO/Si表面 Sr/Si表面 扫描隧道显微镜 去氧过程     

Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

用低能电子衍射(LEED)和扫描隧道显微镜技术研究了氧气在Cu(100)表面化学吸附所形成的表面重构结构．在低覆盖度下,实验上观察到了两个有序重构的混合相,分别为c(2×2)O重构和(√2×2√2)R45°-O重构．在氧原子的覆盖度逐渐增加的过程中,c(2×2)O重构区域的面积逐渐减小．在初始氧化阶段,实验上观察到了呈条状的“锯齿”形的重构结构,这些锯齿形的结构是由相邻的局域化的c(2×2)区域的边界区域(Cu)构成的．STM实验发现,相对于其他重构区域,这些锯齿形的重构区域与有机分子之间存在更加强烈的相互作用．通过分析在不同退火温度下样品LEED衍射点的变化,研究了重构结构的热稳定性,发现三种结构的热稳定性顺序是：锯齿结构>c(2×2)O重构>(√2×2√2)R45°-O重构．     

Charged Fermions Tunneling from a Rotating Charged Black Hole in 5-Dimensional Gauged Supergravity

Recent research shows that Hawking radiation from black hole horizon can be treated as a quantum tunneling process, and fermions tunneling method can successfully recover Hawking temperature. In this tunneling framework, choosing a set of appropriate matrices γ^μ is an important technique for fermions tunneling method. In this paper, motivated by Kerner and Man＇s fermions tunneling method of 4 dimension black holes, we further improve the analysis to investigate Hawking tunneling radiation from a rotating charged black hole in 5-dimensional gauged supergravity by constructing a set of appropriate matrices γ^μ for general covariant Dirac equation. Finally, the expected Hawking temperature of the black hole is correctly recovered, which takes the same form as that obtained by other methods. This method is universal, and can also be directly extend to the other different-type 5-dimensional charged black holes.     

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors （MOSFET） based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.     

高功率905 nm InGaAs隧道结串联叠层半导体激光器

设计出了隧道结串联叠层半导体激光器结构,采用分子束外延进行激光器材料的外延生长,材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺,制作成条宽200 m、腔长800 m 的半导体激光器。两隧道结激光器在脉冲宽度100 ns,重复频率10 kHz,30 A工作电流下输出功率达到80 W,峰值发射波长为905.6 nm,器件的阈值电流为0.8 A,水平和垂直方向的发散角分别为7.8和25。     

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.     

Tunneling effect in cavity-resonator-coupled arrays

The quantum tunneling effect (QTE) in a cavity-resonator-coupled (CRC) array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.     

Determination of Relaxation Time of a Josephson Tunnel Junction

We propose a non-stationary method to measure the energy relaxation time of Josephson tunnel junctions from microwave enhanced escape phenomena. Compared with the previous methods, our method possesses simple and accurate features. Moreover, having determined the energy relaxation time, we can further obtain the coupling strength between the microwave source and the junction by changing the microwave power.     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响.扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面卜的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象.通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了最子尺寸效应对表面反应活性的调控作用.