Influence of Thickness of Field Emission Characteristics of Nanometre Boron Nitride Thin Films

Nanometre boron nitride (BN) thin films with various thickness (54-135nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11V/μm and the highest emission current density of 240μA/cm^2 at an electric field of 23V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.     

非对称耦合量子阱中亚毫米波辐射及其带间激子复合发光特性的理论研究

基于V形三能级模型运用密度矩阵方程研究了非对称耦合量子阱退局域化现象，并具体分析了导带中电子作阱间振荡所产生的亚毫米辐射和激子复合所产生的近红外发射物理过程.理论结果表明：阱间电子波包振荡等效为一经典阻尼振子，其寿命由载流子与纵向光学声子散射时间和电子穿过势垒的渡越时间决定，所产生的亚毫米波辐射强度衰减仅与阱间阻尼系数有关，其线性服从洛仑兹分布.由带间激子复合所产生的近红外辐射频率随电子阱间振荡频率增加而减小，表现为量子限域斯塔克红移，即非对称量子阱在近红外发光区特性随反向偏压而变.这一结果预示着耦合量子 关键词： 非对称耦合量子阱 电子波包振荡 亚毫米波辐射 近红外发射     

一维μ介子模型原子的超强场高次谐波发射

本文提出了一个一维μ介子原子模型,用数值积分方法求解了在超强激光场作用下该模型原子的含时Schrdinger方程,得到了它的高次谐波发射谱.该谱表明,借助于这一奇异原子模型,可将相干辐射由XUV波段推向γ-射线波段.针对这个体系的高次谐波发射效率低的缺点,引入双色场后使发射效率提高了两个数量级.     

介质势垒放电(DBD)等离子体中NO荧光发射谱研究

利用介质阻挡放电 (DBD)等离子体技术对大气污染物NO分子进行了光谱研究 ,得到了低气压条件下放电等离子体在 2 1 0～ 2 80nm光谱范围内的荧光发射谱。该谱明显的表现为双峰结构 ,谱线均成对出现 ,强度分布符合Frank Condon原理 ,且最大峰值位置出现在 2 36nm处 ,将该组谱线归属为NO分子的A2 ΣA →X2 Π1 / 2 ,2 / 3 跃迁。荧光产生过程为 :基态NO分子与高能电子发生非弹性碰撞被激发至激发态A2 Σ 后自发跃迁回基态同时辐射出荧光。通过测量等离子体中NO分子和N2 分子 337nm谱线强度随时间的变化关系 ,初步证实了放电等离子体中存在的NO分子的分解机制为 :e NO→N O e,N NO→N2 O ,O NO→NO2 hν。     

重核区一个可能的β延发中子先驱核素岛

按照β延迟发射中子先驱核的系统学研究结果,预言出在Tl、Hg、Au三种元素中可能的β延迟发射中子先驱核素.计算了其中的未知核质量和中子发射几率.     

Spectra and Spin Polarization of the Valence Band Auger Emission from Cr （100） Surface

Calculations have been carried out on spin-polarized Auger electron emission from a seven-layer chromium (lO0)-film. The core and valence states concerning the Auger transition are obtained from a self-consistent full-potential linearized augmented plane wave calculation by using a repeated slab geometry. The calculations refer to experiments on the L3M23 V- and L3 VV-transRions that have recently been carried out by Heinzmann et al. The Auger spectrum obtained for the L3VV transition agrees relatively well with our calculations, whereas the observed L3M23V-Auger structure is considerably wider than that predicted by our theory. Nevertheless, the spin-polarization in the latter case, which is about -13%, is in fair agreement with the experiment, different from the L3VV-transition where the experiment yields -10% as opposed to the theoretical value of -25%. We give possible reasons for the origin of these discrepancies.     

电子束参量对轫致辐射照射量角分布的影响

本文研究了电子束半径,发射度及能量等参量对闪光X射线照射量在1m处角分布的影响。求得了使中心照射量最大,束半径与发射度之间应满足的拟合关系,表明了电子束能量越高,发射度越小,那么中心照射量就越大,照射量的空间分布就越理想。对电子细束入射位置和入射方向使用了解析法和随机抽样法求出,两种方法的数值计算所得的照射量分布符合得比较好。     

金箔靶背侧X光辐射的实验研究

利用星光Ⅱ激光装置钕玻璃三倍频激光辐照金箔靶，实验研究了金箔靶背侧发射的Ｘ光能谱，时间过程和秀过激光能量。结果表明：金箔背侧发的Ｘ光可以作为一种较干净的强Ｘ光射源。