Effects of External Electric Field on Ferroelectric Superlattice with Two Alternating Layers

The effects of the external electric field on the ferroelectric superlattice with two alternating layers have been studied using the transverse Ising model based on the effective-field theory with the differential technique. The hysteresis loops and susceptibility of the system have been given. The stronger the external electric field, the smaller the susceptibility, reflecting that the polarization is weaker.     

Recombination Efficiency in Double-Layer Organic Light-Emitting Devices

We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶     

光纤光栅选频掺Yb3+双包层光纤激光器

利用相位掩模法 ,在D形内包层掺Yb3 双包层光纤一端直接写制出Bragg光栅 ,用作双包层光纤激光器的输出腔镜 .试验得到了线宽为 0 196nm ,波长为 10 5 8 2nm ,最高输出功率为 5 70mW的稳定激光输出 ,解决了激光器中模式竞争造成的输出不稳定现象 .从速率方程出发 ,对激光器的输出功率与抽运功率、光栅反射率的关系以及最佳光纤长度进行了理论分析 ,结果与实验符合很好     

Self-assembly of Carboxyl Functionalized Polystyrene Nanospheres into Close-packed Monolayers via Chemical Adsorption

The polyacrylic acid functionalized polystyrene nanospheres were synthesized and self-assembled into irregular, densely packed monolayers in non-aqueous media. The polymer nanoparticles were chemically adhered to substrates. The morphologies of the resulting films were investigated. The impact of the volume fraction of alcohol in the mixed solvents on the particle adsorption and fabrication of nanosphere assembled films was examined.     

Synthesis and Photocytotoxicity of Mono-functionalised Porphyrin with Valine Moiety

A mono-funtionalised tetraphenylporphyrin (TPP) bearing valine moiety at the phenyl ring was synthesized for photocytotoxicity examination in four steps, starting from regiospecific mono-nitration of TPP at the phenyl ring. The in vitro photocytotoxicitic effect against SPC-Al adenocarcinona cell line was tested.     

基半群为O—J—严格单半群的零直并的代数

设Ａ是代数闭域Ｋ上的一个具乘基Ｂ的有限维含幺结合代数，称半群Ｂ∪（０）为Ａ的基半群。本文给出了０－Ｊ－严格单半群的定义，对于基半群为Ｏ－Ｊ－严格单半群的零直并的代数，完全研究了它的代数表示型。     

Ni-Si多层膜中固态非晶化反应的热力学与动力学过程

研究了Ni/非晶Si(a-Si)多层组分调制膜(ML)中界面上的固相反应。根据计算的亚稳自由能图,对界面上固相反应形成非晶态进行了热力学与动力学的分析。提出了Ni/a-Si多层膜中的固相反应的动力学模型。 关键词：