玻璃波导光功分器的研制

本文报道了Na^ —Tl^ 离子交换的K9玻璃衬底光功分器（工作波长为1.55μm），分析设计和器件的制作，并对制作的器件进行了模式损耗测试。结果表明，器件达到了预定的要求。     

"自由落体运动"的难点突破

自由落体运动处于第二章的最后,其重点是自由落体运动是匀变速直线运动,而且加速度是g.难点是物体自由下落的快慢与物体的重量无关,即轻重不同的物体自由下落的加速度是相同的.(在学生的头脑中,重的物体落得快,轻的物体落得慢的想法根深蒂固,所以我认为本节的难点在这里)     

顶部籽晶法生长磁光晶体硼酸铁

本文首次采用顶部籽晶泡生法在敞开体系中生长了出了磁光晶体硼酸铁单晶。选用Ｂ２Ｏ３作自助溶剂，ＬｉＦ作稀释剂，确定了原料配方。对长出的晶体作了初步的物化性能测试。讨论了晶体生长的结果。     

Residual stress profiling of an aluminum alloy by laser ultrasonics

A residual-stress profile along the thickness of an aluminum alloy sheet is determined by laser-ultrasonic technique. Surface acoustic waves are generated by a Nd:YAG pulse laser and detected by a Heterodyne interferometer on a lateral free surface of the sheet. The distribution of residual stress is determined by measuring the relative variation of the wavevelocities at different location of the sample along its thickness. This technique is validated by three different residual stress profiles obtained experimentally.     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

增透膜的原理及常见问题的解答

增透膜也称减反膜，即能够减少反射光，增加透射光的薄膜．笔者在此简单分析一下光学镜头中所用的增透膜．     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

“压力管道安全检测与评价技术研究”项目简介

该项目研究内容以压力管道安全保障为中心，在管道危险源辨识与安全状况等级评价、无损检测和结构完整性评估技术三个方面取得了突破性进展。突破了安全状况等级定量评价、薄壁和大曲率管道焊缝缺陷检测、复杂管系统结构完整性评估等技术难题，首次提出在用压力管道安全保障五大环节的全过程技术方法，系统建立了压力管道安全检测与评价方法体系，在压力管道事故预防技术领域实现了跨跃式发展。