隧道围岩压力监测的非线性回归分析研究

隧道围岩压力的变化是导致公路隧道岩块错动、掉块、甚至塌方的重要因素。结合田心隧道工程,将一种可以把压力转变成光纤Bragg光栅波长移位的FBG土压力传感器应用于隧道围岩压力的监测;将40支土压力传感器安装在20个代表性断面中。采用非线性回归分析统计方法对隧道的量测数据进行分析,比较了监测数据的处理分析方法,选取最优的非线性回归分析模型。监测数据与回归拟合数据分析表明,非线性回归分析预测方法不仅可以反映隧道围岩变形和压力变化过程,还能根据其变化趋势进行结构异常判断。     

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors

We report efficient zero-bias high-speed top-illuminated p-i-n photodiodes （PDs） with high responsivity fabricated with germanium （Ge） films grown directly on silicon-on-insulator （SOI） substrates. For a 15 p-m-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at -1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-p.m-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.     

An Alternating-Current Voltage Modulated Thermal Probe Technique for Local Seebeck Coefficient Characterization

Nanostructured and nanocomposite thermoelec- tric materials have recently attracted a great deal of attention due to the optimization of thermal and electrical transports for high thermoelectric performance The initial ideas for the applica- tions of nano-structures in thermoelectric materials are that the lattice thermal conductivity can be de- pressed by the scattering of nano-particles or nano- boundaries as well as the enhanced electron density of states at the Fermi level. The latter is expected to enhance Seebeck coefficients due to the fact that the low energy carriers can be filtered by nano-sized grain boundaries. Lowered thermal conductivity and enhanced thermoelectric figure of merit have been ob- served in lots of bulk materials with nanostructures or nano-impurities. However, the thermal and electrical transports in these nano-materials are usually mea- sured by normal commercial systems, in which only the statistical values of the transports are obtained. The characterization of local thermoelectric parame- ters still remains a challenging task at the submicro, even nanometer level as a powerful tool for Scanning probe microscopy nanostructure imaging and local properties characterization, has become a promis- ing technique for measuring local thermal and electri- cal properties, like scanning tunneling microscopy, scanning thermal microscopy, and scanning Joule expansion microscopy. Recent work has demon- strated simultaneously determined the thermal con- ductivity and Seebeek coefficient of Bi2Se3 thin film by a microprobe technique.     

简谐点荷载下饱和土中圆形隧道系统的动力响应

在饱和土体地区,由于流-固耦合效应,实际轨道交通荷载作用下隧道系统动力响应的研究较少,为此提出一种新方法来研究非轴对称简谐点荷载作用下饱和土体中圆形隧道系统的动力响应。假定衬砌为Flügge薄壁圆柱壳,土体为饱和多孔介质,将荷载、动力响应沿环向模态展成级数形式,利用傅里叶积分变换首先求得衬砌-饱和土体系统的动力响应。在此基础上,将道床板作为无限长的Euler梁,考虑道床板、衬砌、饱和土体的相互作用,进一步求解无砟轨道道床板-衬砌-饱和土体系统在点荷载作用下的响应。研究的结果表明这种方法可有效求解非轴对称荷载作用下饱和土中2种隧道系统的动力响应;荷载频率对饱和土中2种隧道系统的动力响应均有较大影响;道床板能减小衬砌、饱和土体的动力响应。     

Semimetal NaaBi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for NaaBi thin films on double-layer graphene are successfully established. The band structure of NaaBi grown on graphene is mapped along Г-M and Г-K; directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface.     

不同表面修饰制备高性能柔性薄膜晶体管

分别采用六甲基二硅胺(HMDS,Hexamethyldisilazane)和聚苯乙烯/氯硅烷复合材料修饰聚乙烯基苯酚(PVP)绝缘层制备了底接触的有机薄膜晶体管并研究了其半导体层的表面形貌和器件的电学性能。原子力显微镜观察发现,并五苯半导体薄膜在不同的界面修饰上的生长形貌产生了很大变化。在PVP上沉积的并五苯晶粒尺寸都小于150 nm,经过聚苯乙烯/氯硅烷复合材料和HMDS处理后的PVP表面生长的并五苯晶粒尺寸则分别在200~400 nm和400~600 nm。大尺寸的晶粒能够减小器件沟道内的陷阱浓度,从而有效地提高电学性能。PVP绝缘层采用聚苯乙烯/氯硅烷和HMDS修饰后,与未修饰的器件相比迁移率分别提高了58倍和82倍。采用HMDS作为表面修饰层制备柔性OTFT,并五苯场效应晶体管的关态电流约为10-9A,电流的开关比超过104,最大场效应迁移率约可达0.338 cm2·V-1·s-1.     

Wave-vector filtering effect of the electric-magnetic barrier in HgTe quantum wells

Because of the helicity of electrons in HgTe quantum wells(QWs) with inverted band structures,the electrons cannot be confined by electric barriers since electrons can tunnel the barriers perfectly without backscattering in the HgTe QWs.This behavior is similar to Dirac electrons in graphene.In this paper,we propose a scheme to confine carriers in HgTe QWs using an electric-magnetic barrier.We calculate the transmission of carriers in 2-dimensional HgTe QWs and find that the wave-vector filtering effect of local magnetic fields can confine the carriers.The confining effect will have a potential application in nanodevices based on HgTe QWs.     

Tunneling dynamics of superfluid Fermi gas in a triple-well potential

The tunneling dynamics of superfluid Fermi gas in a triple-well potential in the unitarity regime is investigated in the present paper. The fixed points of the (0, 0) mode and the (∏, ∏) mode are given. We find that the interaction parameter U and the coupling strength k could have an extreme effect on the quantum tunneling dynamics. We also find that, in the zero mode, only Josophson oscillation appears. However, for the ∏ mode, the trapping phenomena take place. An irregular oscillation of the particle number in each well could appear by adjusting the scanning period T* . It is noted that if the scanning period is less than a critical point T , the particle number will come back to the fixed point with small oscillation, while if T T* the particle number cannot come back to the fixed point, but with irregular oscillations. The dependence of the critical point T* on the system parameter of coupling strength k is numerically given.     

Molecular beam epitaxy and superconductivity of stoichiometric FeSe and KxFe2_ySe2 crystalline films

Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.