KDP类晶体快速生长技术研究

概述了本课题组在KDP类晶体快速生长领域的研究及进展情况。通过集成生长设备的管道系统、升级连续过滤系统、研发晶体生长过程的实时监控系统以及高精度退火设备,实现晶体生长系统的集成化;通过数值模拟优化晶体表面流场状态、全流程量化控制实现晶体稳定生长以及精密热退火进一步提升晶体性能;针对点籽晶快速生长KDP类晶体中存在的柱锥交界面问题,相继提出了长籽晶锥区限制生长法和长籽晶自由生长法,为大尺寸高性能KDP类晶体生长提供新的技术方案。     

低温缓冲层对氧化锌薄膜质量的影响

利用金属有机化学气相沉积(MOCVD)法,在Si衬底上外延生长ZnO薄膜。为了改善氧化锌薄膜的质量,首先在Si衬底上生长低温ZnO缓冲层,然后再生长高质量的ZnO薄膜。通过XRD、SEM、光致发光(PL)光谱的实验研究,发现低温ZnO缓冲层可有效降低ZnO薄膜和Si衬底之间的晶格失配以及因热膨胀系数不同引起的晶格畸变。利用低温缓冲层生长的ZnO薄膜的(002)面衍射峰的强度要比直接在Si上生长的ZnO薄膜样品的高,并且衍射峰的半高宽也由0.21°减小到0.18°,同时有低温缓冲层的样品室温下的光致发光峰也有了明显的增高。这说明利用低温缓冲层生长的ZnO薄膜的结晶质量和光学性质都得到了明显改善。     

ON UNILATERALLY CONSTRAINED MOTIONS OF RIGID BODIES SYSTEMS

ＯＮＵＮＩＬＡＴＥＲＡＬＬＹＣＯＮＳＴＲＡＩＮＥＤＭＯＴＩＯＮＳＯＦＲＩＧＩＤＢＯＤＩＥＳＳＹＳＴＥＭＳＬｉＨｏｎｇｂｏ（李洪波）（ＭＭＲＣ，ＩｎｓｔｉｔｕｔｅｏｆＳｙｓｔｅｍｓＳｃｉｅｎｃｅ，ＡｃａｄｅｍｉａＳｉｎｉｃａ，Ｂｅｉｊｉｎｇ１０００８０...     

Epoxy/amine‐functionalized short‐length vapor‐grown carbon nanofiber composites

Short length vapor‐grown carbon nanofibers (VGCNFs) were functionalized with 4‐aminobenzoic acid in polyphosphoric acid/phosphorous phentoxide medium via “direct” Friedel‐Crafts acylation reaction to afford aminobenzoyl‐functionalized VGCNFs (AF‐VGCNFs). The AF‐VGCNFs as a cocuring agent were mixed with epoxy resin by simple mechanical stirring in methanol which was added to help efficient mixing. After evaporation of methanol, 4,4′‐methylenedianiline as a curing agent was added to the mixture, which was then cured at elevated temperatures. The resultant composites displayed uniform dispersion of AF‐VGCNFs into cured epoxy matrix. During curing process, the amine functionalities on AF‐VGCNF together with 4,4′‐methylenedianiline were expected to be involved in covalent attachment to the epoxy resin. As a result, both tensile modulus and strength of the composites were improved when compared with those of pure epoxy resin. Thus, the AF‐VGCNFs play a role as an outstanding functional additive, which could resolve both dispersion and interfacial adhesion issues at the same time by functionalization of VGCNFs and covalent bonding between the additive and matrix, respectively. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 7473–7482, 2008     

关于刚体系统的单侧约束运动

本文研究了一大类刚体系统的单侧约束运动的局部和整体性质。主要结论是;局部地,这类系统的运动相当于某带过黎曼流形上的质点的运动;整体地,在能量守恒的假定下。这类系统相当于某带边黎曼流形上的台球系统。     

Tb3+∶YAG单晶荧光层中掺杂Ga3+的荧光敏化作用

采用液相外延工艺成功制备了Tb3 + ∶YAGG单晶荧光层 ,研究了Tb3 + 激活YAG主晶格外延层中Ga3 + 掺杂的荧光敏化效应 ,可以看到在Tb3 + 荧光得到显著增强的同时 ,外延荧光层发光的饱和特性也有所改善。实验中观察到了Ga3 + 掺杂后基质晶体吸收边缘向长波方向展宽 ,并与Tb3 + 的7F6 9E、7E典型吸收峰发生交叠的现象 ,用基质与Tb3 + 之间的声子耦合解释了上述Tb3 + ∶YAGG外延层中所存在的能量传递、荧光敏化现象。基质与掺杂激活中心间能量传递机制的建立将会为基于YAG主晶格的高效荧光材料研究提供一个新的思路。     

气相生长碳纤维/形状记忆聚氨酯复合薄膜的力学及形状记忆性能研究

采用溶液混合法制备了不同含量的气相生长碳纤维(VGCF)增强形状记忆聚氨酯(SMPU)的复合材料薄膜,测试分析了纯SMPU及VGCF/SMPU复合材料薄膜的力学性能及形状记忆性能.结果表明,制得的复合材料薄膜在VGCF含量达到9 wt%时,VGCF在SMPU基体中仍具有较好的分散性;SMPU与VGCF复合后,得到的复合材料薄膜的拉伸强度和刚度有较大程度的提高,含量达到9 wt%时复合材料薄膜的拉伸强度比纯SMPU提高66%,弹性模量提高300%,储能模量也有较大程度提高;SMPU与VGCF复合后,形状记忆性能有一定的下降,但经过适当预处理后,其形状记忆性能可以基本接近纯SMPU.     

三维涡度方程单向周期初边值问题的拟谱─有限差分方法

本文对三维涡度方程单向周期初边值问题建立了一种Fourier拟谱-有限差分格式,分析了其广义稳定性和收敛性,数值结果显示了这种方法的优点。     

助熔剂法生长的PLZST单晶的缺陷研究

本文介绍了助熔剂缓慢降温自发成核法生长的稀土掺杂锆钛锡酸铅镧(PLZST)晶体中出现的几种缺陷：包裹体、开裂、位错、枝晶,分析了这些缺陷的形成机理并提出了减少和消除这些缺陷的一些措施。     

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

In this paper, a complementary metal-oxide semiconductor （CMOS）-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon （SGPS） trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.