Correct Evaluation of the Effect of Transverse Effective Charges on Phonons in AlAs Quantum Dots

An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near F point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities of phonon states of different irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TCs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

Excess isentropic compressibility and speed of sound of the ternary mixture 2-propanol + diethyl ether + n-hexane and the constituent binary mixtures at 298.15 K

Speed of sound and densities of the ternary mixture 2-propanol + diethyl ether + n-hexane and also the binary mixtures 2-propanol + diethyl ether and 2-propanol + n-hexane have been measured at the entire composition range at 298.15 K. The excess isentropic compressibilities and the excess speed of the sound have been calculated from experimental densities and speed of sound. These excess properties of the binary mixtures were fitted to Redlich-Kister equation, while the Cibulka’s equation was used to fit the values related to the values to the ternary system. These excess properties have been used to discuss the presence of significant interactions between the component molecules in the binary mixtures and also the ternary mixtures. Speed of sound of the binary mixtures and the ternary mixture have been compared with calculated values from free length theory (FLT), collision factor theory (CFT), Nomoto’s relation (NR), Van Deal’s ideal mixing relation (IMR) and Junjie’s relation (JR). The results are used to compare the relative merits of these theories and relations in terms of the root mean square deviation relative (RMSD_r).     

光纤环形外腔半导体激光器频偏特性研究

本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源.     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

Photochemical Synthesis and Spectral-Optical Characteristics of ZnO/Cu and ZnO/Ag/Cu Nanoheterostructures

The photoreduction of Cu²⁺ at the surface of ZnO nanoparticles and ZnO/Ag nanostructures was investigated. The spectral characteristics of the obtained ZnO/Cu and ZnO/Ag/Cu composites were studied in relation to the reaction conditions. It was shown that the ZnO/Ag nanoparticles have higher photocatalytic activity in the reduction of Cu²⁺ ions than the individual ZnO particles.     

钯(Ⅱ)-芳香氮碱-氨基酸三元配合物中的电子效应和芳环堆积作用

用pH-电位滴定法测定了Pd(L)(Aa)⁺三元配合物及相应的二元配合物,在25±0.5℃,30%的乙醇水溶液(体积分数),I=0.1(KNO₃)条件下的稳定常数及表征常数。其中L=邻菲罗啉(phen)、苯并咪唑邻菲罗啉(PIP)、邻菲罗啉-5,6-二酮(dophen)、2,9-二甲基邻菲罗啉(dmphen)和联吡啶3,3′-二羧酸(BDA);Aa为甘氨酸(gly)、苯丙氨酸(phe)、酪氨酸(tyr)、S-苄基-半胱氨酸(bcys)、谷氨酰胺(glu)和γ-谷氨酰-α-萘胺(gnapa)。从配合物配体间的电子效应和芳环堆积等观点对配合物的附加稳定性进行了讨论,并计算了电子效应和芳环堆积效应各自对三元配合物附加稳定性的贡献。     

Crystal Structure of Ternary Molybdate Rb5FeHf(MoO4)6 — a New Phase in the Rb2MoO4-Fe2(MoO4)3-Hf(MoO4)2 System

Physicochemical analysis (XRPA, DTA) was used to study phase equilibria in a ternary salt system Rb₂MoO₄-Fe₂(MoO₄)₃-Hf(MoO₄)₂ in the subsolidus region. Ternary molybdates with compositions 5:1:3, 5:1:2, and 1:1:1 have been found and synthesized. Crystal and thermal characteristics have been determined. Single crystals of the ternary molybdate Rb₅FeHf(MoO₄)₆ with a composition of 5:1:2 were grown. The crystal structure of the compound was solved using X-ray diffractometry (CAD-4 automatic diffractometer, MoK _α radiation, 1766 F(hkl), R = 0.0298). Hexagonal crystals with unit cell dimensions: a = b = 10.124(1) Å, c =15.135(3) Å, V = 1343.4(4) ų, Z = 2, ρ_calc = 4.008 g/cm³, space group P6₃. The mixed three-dimensional framework of the structure is formed from two sorts of MoO₄ tetrahedra and Fe and Hf octahedra linked through their common O-vertices. Rubidium atoms of three varieties occupy the large voids of the framework.Original Russian Text Copyright © 2004 by B. G. Bazarov, R. F. Klevtsova, A. D. Tsyrendorzhieva, L. A. Glinaskaya, and Zh. G. Bazarova__________Translated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 6, pp. 1038–1043, November–December, 2004.