Tunable negative index metamaterial employing in-plane switching mode at terahertz frequencies

We analysed the response of a tunable liquid crystal metamaterial transducer in the terahertz frequency range. Tunability of scattering parameters is achieving by an in-plane switching (IPS) effect. The metamaterial structure is based on Ω-shape resonators. A full-wave analysis technique based on the finite-difference time-domain (FDTD) method was performed using the QuickWave 3D electromagnetic solver. Terahertz transmission properties of the metamaterial structure can be controlled by the director of the liquid crystal layer. The effective refractive index for operation frequency varies from negative to positive values. A novel approach to switching of metamaterial transducer by IPS mode is presented.     

Synthesis of terminally substituted stilbene-tolane liquid crystals

Methods for synthesizing substituted alkyl and fluoro stilbene-tolane (PTPDP) liquid crystal materials are presented. These compounds show a slightly higher birefringence than the analogous bistolanes, but higher melting points and heats of fusion. Potential applications of these compounds for optical communications and displays are discussed.     

单金纳米棒的光散射分析化学:径向比与分析灵敏度的关系

单纳米颗粒作为信号感应单元在化学与生物传感应用中已引起广泛关注.本文通过暗场显微成像(iDFM)研究了不同径向比金纳米棒的光散射性质.将iDFM与扫描电子显微镜(SEM)结合表征种子生长法制备的金纳米棒,结果发现,因局域表面等离子体共振而展示出的红色散射光随单个金纳米棒的径向比增大逐渐红移,且金纳米棒对其周围介质折光率(RI)变化的敏感程度随径向比增大而增大.这一结果对设计高灵敏的生物纳米传感器、提高分析检测的灵敏度具有很好的指导意义.     

A unified scale for the Auger parameter: Methodology and benefits

The Auger parameter (AP) is a value extracted from the X-ray photoelectron spectrum (XPS) by addition of the binding energy of a photoelectron, for a given element in the spectrum, to the kinetic energy of the Auger electron emitted as the resulting hole in the electronic structure is filled by an electron from one of the outer orbitals. The value of the AP is sensitive to the polarization of electrons in the orbitals of neighbouring ions towards the photo-ionized atom and is thus related to other opto-electronic properties of the material. A correlation had been shown between the refractive index and the AP of aluminosilicates and thus the ability to compare, on a single chart, the AP's of the Al and Si ions gave important structural information. This comparison was made possible by normalising the individual APs to a common zero-point. In this contribution, the methodology employed is extended to a wider range of elements. The resulting ability, to compare and contrast the normalised AP, thus generated, greatly enhances the information available from XPS and thus relates it directly to the polarizability of the material's structure.     

Reduction of Dimerization Tendency Due to the Decrease in Hybridization Index by Inclusion of 4s and 4p Semicore States as Valence States in Mon (n=2-18) Clusters: A First-Principles Study

Owing to the unique structural, electronic, and physico-chemical properties, molybdenum clusters are expected to play an important role in future nanotechnologies. However, their ground states are still under debate. In this study, the crystal structure analysis by particle swarm optimization (CALYPSO) approach is used for the global minimum search, which is followed by first-principles calculations, to detect an obvious dimerization tendency in Mo\begin{document}$ _n $\end{document} (\begin{document}$ n $\end{document} = 2\begin{document}$ - $\end{document}18) clusters when the 4s and 4p semicore states are not regarded as the valence states. Further, the clusters with even number of atoms are usually magic clusters with high stability. However, after including the 4s and 4p electrons as valence electrons, the dimerization tendency exhibits a drastic reduction because the average hybridization indices \begin{document}$ H_{ \rm{sp}} $\end{document}, \begin{document}$ H_{ \rm{sd}} $\end{document}, and \begin{document}$ H_{ \rm{pd}} $\end{document} are reduced significantly. Overall, this work reports new ground states of Mo\begin{document}$ _n $\end{document} (\begin{document}$ n $\end{document} = 11, 14, 15) clusters and proves that semicore states are essential for Mo\begin{document}$ _n $\end{document}     

基于偏振特性对石英玻璃和绿漆涂层的反演

物质的偏振特性与其复折射率、表面粗糙度以及观测几何条件有关,为了应用偏振探测技术实现对目标的定量反演,本文首先对两种典型目标(绿漆涂层和石英玻璃)的偏振特性进行了实验测定,并对偏振度与探测天顶角的关系进行了分析。利用实验数据并基于描述目标偏振特性的PG模型首次在考虑了粗糙度的影响下,对目标的折射率、消光系数进行了定量反演,最后将反演结果与参考结果进行比较。结果表明,石英玻璃的折射率相对误差为4.944 9%,绿漆涂层的折射率与消光系数的相对误差分别为11%和21.558 9%。该方法在考虑表面粗糙度的条件下能够更精确地测定物质的复折射率,同时也为偏振技术应用于目标定量反演提供了依据。     

Large‐acceptance diamond planar refractive lenses manufactured by laser cutting

For the first time, single‐crystal diamond planar refractive lenses have been fabricated by laser micromachining in 300 µm‐thick diamond plates which were grown by chemical vapour deposition. Linear lenses with apertures up to 1 mm and parabola apex radii up to 500 µm were manufactured and tested at the ESRF ID06 beamline. The large acceptance of these lenses allows them to be used as beam‐conditioning elements. Owing to the unsurpassed thermal properties of single‐crystal diamond, these lenses should be suitable to withstand the extreme flux densities expected at the planned fourth‐generation X‐ray sources.     

手性负折射率材料的最新进展

阐述了手性负折射率现象的产生机制;总结了近几年国内外手性负折射率材料在仿真模拟和实验制备方面的研究进展;分析了手性负折射率材料的旋光性、手性参数、损耗等;介绍了手性负折射率材料在各个领域的应用。分析认为,探索手性负折射率材料的新机制、新方法和新材料,从而在可见光波段实现负折射率是未来手性负折射率材料的重要发展方向之一。     

定向回归反射玻璃微珠折射率研究

从理论上分析了玻璃微珠定向回归反射原理,利用近轴光线球面折射理论分析了玻璃微珠实现回归反射的折射率,并结合实际使用情况,在最大可能增加回归反射的基础上,讨论了入射光线到主光轴的距离与回归光线和入射光线夹角之间的关系,从而确定出了实现最大反射时玻璃微珠的折射率范围为1.80~1.95,研究结果对回归反射标志牌的开发具有重要的理论意义。     

Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.