Charge-carrier and polaron hopping mobility in disordered organic solids: Carrier-concentration and electric-field effects

The effective-medium approximation (EMA) analytical theory is advanced further to describe charge transport at arbitrary charge-carrier concentration in a disordered organic material with superimposed polaron effects. A key point of this model compared to the previous treatment [Phys. Rev. B 76 (2007) 045210] is that it is formulated for arbitrary electric fields and is able to describe consistently both the carrier-concentration and field dependences of charge mobility. The mobilities of both bare charge carriers and polarons were calculated using the Miller–Abrahams and polaron jump rate models, respectively. An excellent quantitative agreement was obtained between the theoretical calculations and the recent numerical simulations of the field- and carrier-density dependences of the mobility for bare charge carriers using the same parameters. The polaronic carrier density effect was also calculated using the complete Marcus jump rate equation and straightforward EMA configurational averaging, and the results compared to that obtained with the use of the symmetrical jump rate model and the effective transport energy concept. This study confirms that a strong dependence of carrier mobility upon increasing carrier density and electric field, which has conventionally been observed in experiment for numerous organic semiconducting materials, is incompatible with the notion of large polaron binding energy in these materials, implying that the energetic disorder plays a dominant role.     

Nucleation and growth of bubbles in He ion-implanted V/Ag multilayers

Microstructures of He ion-implanted pure Ag, pure V and polycrystalline V/Ag multilayers with individual layer thickness ranging from 1?nm to 50?nm were investigated by transmission electron microscopy (TEM). The bubbles in the Ag layer were faceted and larger than the non-faceted bubbles in the V layer under the same implantation conditions for both pure metals and multilayers. The substantially higher single defects surviving the spike phase and lower mobility of trapped He in bcc than those in fcc could account for this difference. For multilayers, the bubbles nucleate at interfaces but grow preferentially in Ag layers due to high mobility of trapped He in fcc Ag. In addition, the He concentration above which bubbles can be detected in defocused TEM images increases with decreasing layer thickness, from 0 for pure Ag to 4–5 at. % for 1?nm V/1?nm Ag multilayers. In contrast, the bubble size decreases with decreasing layer thickness, from approximately 4?nm in diameter in pure Ag to 1?nm in the 1?nm V/1?nm Ag multilayers. Elongated bubbles confined in the Ag layer by the V–Ag interfaces were observed in 1?nm multilayers. These observations show that bubble nucleation and growth can be suppressed to high He concentrations in nanoscale composites with interfaces that have high He solubility.     

新型Si3N4层部分固定正电荷AlGaN／GaNHEMTs器件耐压分析

为了优化传统AlGaN／GaNhighelectronmobilitytransistors结构表面电场分布,提高器件击穿电压和可靠性,本文利用不影响AlGaN／GaN异质结极化效应的Si3N4钝化层电荷分布,提出了一种sbN4钝化层部分固定正电荷AIGaN／GaNhighelectronmobilitytransistors新结构．SiaN4钝化层中部分固定正电荷通过电场调制效应使表面电场分布中产生新的电场峰而趋于均匀．新电场峰使得新结构栅边缘和漏端高电场有效降低,器件击穿电压从传统结构的296V提高到新结构的650V,而且可靠性改善．通过Si3N4与AlGaN界面横、纵向电场分布,说明了产生表面电场峰的电场调制效应,为设计SiaN4层部分固定正电荷新结构提供了科学依据．Si3N4钝化层部分固定正电荷的补偿作用,使沟道二维电子气浓度增加,导通电阻减小,输出电流提高．     

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Influence of a two-dimensional electron gas on current-voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro¨dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region(about 5 nm).For a current density of 7 × 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 × 1017 m-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

高阻GaN的MOCVD外延生长

利用金属有机化合物气相沉积(MOCVD)在蓝宝石衬底上生长了高阻GaN薄膜。对GaN成核层生长的反应室压力、生长时间和载气类型对GaN缓冲层电学特性的影响进行了分析。实验结果表明,延长GaN成核层的生长时间,降低成核层生长时的反应室压力,载气由H₂换为N₂都会得到高阻的GaN缓冲层。样品的方块电阻R_s最高为2.49×10¹¹ Ω/□。以高阻GaN样品为衬底制备了AlGaN/AlN/GaN结构HEMT器件,迁移率最高达1 230 cm²/(V·s)。     

Finite volume approximation of degenerate two‐phase flow model with unlimited air mobility

Models of two‐phase flows in porous media, used in petroleum engineering, lead to a coupled system of two equations, one elliptic and the other degenerate parabolic, with two unknowns: the saturation and the pressure. In view of applications in hydrogeology, we construct a robust finite volume scheme allowing for convergent simulations, as the ratio μ of air/liquid mobility goes to infinity. This scheme is shown to satisfy a priori estimates (the saturation is shown to remain in a fixed interval, and a discrete L2(0,T;H1(Ω)) estimate is proved for both the pressure and a function of the saturation), which are sufficient to derive the convergence of a subsequence to a weak solution of the continuous equations, as the size of the discretization tends to zero. We then show that the scheme converges to a two‐phase flow model whose limit, as the mobility of the air phase tends to infinity, is the “quasi‐Richards equation” (Eymard et al., Convergence of two phase flow to Richards model, F. Benkhaldoun, editor, Finite Volumes for Complex Applications IV, ISTE, London, 2005; Eymard et al., Discrete Cont Dynam Syst, 5 (2012) 93–113), which remains available even if the gas phase is not connected with the atmospheric pressure. Numerical examples, which show that the scheme remains robust for high values of μ, are finally given. © 2012 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2013     

Improvement of Unified Mobility Model with Analytic Current-Voltage Expression for Organic Diodes

The carrier mobility formula of Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] is modified through analyzing numerical results for mobility. The modified expression gives improved precision to numerical data, and is a function of temperature, carrier density, and electric field. The corresponding space-charge limited (SCL) equations can be strictly solved with carrier density being replaced by the average value evaluated based on the strict solution. An analytic current-voltage relationship is derived and is validated with experimental data collected from different materials in a wide range of operating conditions.