Mobility measurement in six DOFs applied to the hub of a car

Complex models are usually needed to predict functional performance of mechanical devices such as noise and vibration levels. A typical model is divided into substructures where each substructure is described either as a simulation or as an experimental model. When coupling substructures, information is needed that describes the boundary conditions at the attachment points of the various substructures. This can be hard to achieve, especially when full structural behavior including rotational degrees of freedom (DOFs) are needed. The objective of this study was to obtain the mechanical mobility matrix in six DOFs for a wheel hub of car, as an example of a complex mechanical structure, through an experimental approach based on the multiple-input multiple-output technique. Further, evaluation of the measurement quality was conducted without requirements for numerical simulation comparisons. A specially designed brake disc was fabricated for direct attachment of shakers and transducers. The quality of the 6-DOF mechanical mobility matrix was evaluated using reciprocities, coherence functions, and random error in the gain-factor estimates. The results showed good quality in the reciprocities, and the multiple coherences in each degree of freedom were close to one in the frequency range of 25–500 Hz. The random error can be reduced by increasing the number of averages.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

In this paper,the influence of a drain field plate(FP)on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor(HEMT)is investigated.The HEMT with only a gate FP is optimized,and breakdown voltage VBRis saturated at 1085 V for gate–drain spacing LGD≥8μm.On the basis of the HEMT with a gate FP,a drain FP is added with LGD=10μm.For the length of the drain FP LDF≤2μm,VBRis almost kept at 1085 V,showing no degradation.When LDFexceeds 2μm,VBRdecreases obviously as LDFincreases.Moreover,the larger the LDF,the larger the decrease of VBR.It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGDat which VBR begins to saturate in the first structure.The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.     

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs(the gap between the gate and the source/drain antenna) and L w(the gap between the source and drain antenna).With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.     

High temperature characteristics of AlGaN/GaN high electron mobility transistors

Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.     

Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around --1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (--3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μ m gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, V_T of the thin barrier HEMTs is much more stable under the gate step-stress.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.     

Rapid analysis of captopril in human plasma and pharmaceutical preparations by headspace solid phase microextraction based on polypyrrole film coupled to ion mobility spectrometry

A rapid, simple, and sensitive headspace solid phase microextraction coupled to ion mobility spectrometry (HS-SPME-IMS) method is presented for analysis of the highly specific angiotensin-converting enzyme (ACE) inhibitor, captopril (CAP). Positive ion mobility spectra of CAP were acquired with an ion mobility spectrometer equipped with a corona discharge ionization source. Mass-to-mobility correlation equation was used to identify product ions. A dodecylsulfate-doped polypyrrole (PPy-DS) coating was used as a fiber for SPME. The results showed that PPy-DS based SPME fiber was suitable for successfully extracting CAP from human blood plasma and pharmaceutical samples. The HS-SPME-IMS method provided good repeatability (R.S.D.s < 4%) for aqueous and spiked plasma samples. The calibration graphs were linear in the range of 10-300 ng mL⁻¹ (R² > 0.99) and detection limits were 7.5 ng mL⁻¹ for aqueous and 6.3 ng mL⁻¹ for plasma blank samples. Finally, a standard addition calibration method was applied to HS-SPME-IMS technique for the analysis of blood plasma samples and tablets. Purpose method seemed to be suitable for the analysis of CAP in plasma samples as it is not time consuming (state total time from sample preparation to analysis), it required only small quantities of the sample, and no derivatization was required.     

Kinetic study of proton-bound dimer formation using ion mobility spectrometry

A method to measure the rate constant for the formation of symmetrical proton-bound dimers at ambient pressure was proposed. The sample is continuously delivered to the drift region of an ion mobility spectrometer where it reacts with a swarm of monomer ions injected by the shutter grid. Dimer ions are formed in the drift tube and a tail appears in the ion mobility spectrum. The rate constant is derived from the mobility spectra. The proposed approach was typically examined for methyl isobutyl ketone (MIBK), 2,4-dimethyl pyridine (DMP), and dimethyl methyl phosphonate (DMMP). The rate constants measured in this study were: 0.25 × 10⁻⁹, 0.86 × 10⁻¹⁰, and 0.47 × 10⁻¹⁰ cm³ s⁻¹ for MIBK, DMP and DMMP, respectively. The logarithm of the measured rate constants were found to be almost independent of reciprocal temperature within 303 to 343 K, indicating that no activation energy is involved in the formation of proton-bound dimers.