Paramagnetic defects induced by ion implantation in oxide glasses

Radiation defects induced by ion bombardment of multicomponent oxide glasses of five compositions (phosphates and borosilicates) were investigated by means of electron paramagnetic resonance (EPR). The samples were implanted with N⁺, O⁺, Ar⁺, Mn⁺, Cu⁺ and Pb⁺ ions at energy E=150 keV at three different doses between 3×10¹⁵ and 10¹⁷ ions/cm². The broad anisotropic EPR spectra with principal g-values answering the relationship g_z>g_y>g_x˜g_e (g_e is g-factor of free electron) were observed for the samples of all five compositions. The g-values depend on glass composition. For example, g_z ranges from 2.016 to 2.057. Computer simulation shows that the spectra of many samples are superpositions of two spectra with g-values answering the mentioned relationship. These spectra are attributed to molecular O₂⁻ ions weakly coupled with glass network. In some samples narrow almost symmetric lines with g=2.0025±0.0005 were observed. The possible radiation defects responsible for this signal are discussed.     

H等离子体处理对Si中He注入空腔引起的效应

室温下分别采用40,160和1550 keV的He离子注入单晶Si样品到相同的剂量5×10¹⁶cm^-2,部分经He注入过的样品然后再分别接受高密度H等离子体处理.利用透射电子显微镜分析比较了随后800°C高温退火引起的空腔形成.结果表明,附加的H等离子体处理对空腔生长所产生的效应明显地依赖于He离子的能量.对于40 keV He离子注入,空腔的形成和热生长似乎不受H等离子体处理的影响,而对于160 keV He离子注入,附加的等离子体处理则促进了空腔的生长并伴随着空腔分布区域的变窄.对于1550keV He离子注入,H等离子体处理对空腔产生的效应介于40和160 keV注入情况之间.结合H等离子体处理在Si中所引起的缺陷的产生及其热演变过程对实验结果进行了讨论.     

Effect of Cr implantation on structural and optical properties of AlN thin films

Molecular beam epitaxy (MBE) grown AlN thin layer on sapphire substrates have been implanted with Cr⁺ ions for various dose from 10¹³ to 10¹⁵ cm⁻². The analyses were carried out by an X-ray diffractometer (XRD), Raman spectroscopy, a spectrophotometer and spectroscopic ellipsometry (SE) for structural and optical analyses. E₂(high) and A₁(LO) Raman modes of AlN layer have been observed and analyzed. The behavior of Raman shift and the variation in intensity and in peak width of Raman modes as a function of ions flux are explained on the basis of chromium substituting aluminum atom and implantation-induced lattice damage. Both Raman and X-ray analyses reveal that the incorporation of chromium atoms increases in the host lattice with the increasing of Cr ions fluence. The band gap energy was determined by using transmission spectra. It was found that the band gap energy decreases as the ion dose increases. The band gap of the unimplanted AlN is 6.02 eV and it decreases down to 5.92 eV for the Cr⁺-implanted AlN with a ion dose of 1×10¹⁵ cm⁻². Optical properties such as optical constants of the samples were examined by using a spectroscopic ellipsometer. It was observed that the refractive index (n) decreases with the increasing of ion dose.     

加注稀土元素铒改善轴承表面性能的研究

在Ｍｏ＾＋＋Ｎ＾＋注入模式的基础上，应用电子能谱、卢瑟福背散射谱、扫描电子显微镜和ＭＨＫ－５００型摩擦磨损试验机等研究了加注稀土元素铒正离子Ｅｒ＾＋对轴承表面摩擦学性能和耐蚀性能的影响。结果表明，在合理配置Ｍｏ＾＋、Ｎ＾＋、Ｅｒ＾＋之能量和剂量的情况下，加注Ｅｒ＾＋既能更好地改善轴承的表面性能，又能使重离子的强韧化效果提高２－４倍以上，表明ＭＯ＾＋＋Ｎ＾＋＋Ｅｒ＾＋注入模式是一种具有良好应用前景的     

W6Mo5Cr4V2钢氮离子注入表面改性层的摩擦学性能

对 W6 Mo5 Cr4V2钢进行氮离子注入 ,用销 -盘式摩擦磨损试验机考察了钢表面注入改性层的摩擦磨损性能 ;用扫描电子显微镜、俄歇电子能谱仪及微区 X射线衍射仪等考察了改性层的相组成、氮元素沿注入层深度方向的浓度分布及磨损机理 .结果表明 ,离子注入处理后钢表面显微硬度提高、残余压应力增大、表面粗糙度降、注入层中形成了大量细小弥散分布的硬质析出相ε- Fe2 - 3 N、Cr N及β- Cr2 N等 ,从而改善了材料的摩擦学性能 ,并导致磨损机理发生变化 .正交试验结果表明 ,氮离子注入对 W6 Mo5 Cr4V2钢摩擦学性能的改善程度与注入能量和注入剂量不成正比 ,注入参数存在最佳值 ,最佳注入能量为 10 0 ke V,注入剂量为 4× 10 1 7ions/cm     

Studies on the Voltammetric Behavior of Nicardipine Hydrochloride and its Voltammetric Determination at the Co/GC Modified Electrode

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Conductive and optical properties of PPV modified by N+ ion implantation

In this article, a soluble poly[2‐methoxy‐5‐(3′‐methyl)butoxy]‐p‐phenylene vinylene (MMB‐PPV) was synthesized by dehydrochlorination reaction and the MMB‐PPV film was implanted by nitrogen ions (N⁺) with the ion dose and energy in the range of 3.8 × 10¹⁵ to 9.6 × 10¹⁶ ions/cm² and 15–35 keV, respectively. The surface conductivity, optical absorption, optical band gap (E_g) of modified MMB‐PPV film were studied, and the third‐order nonlinear optical susceptibility (χ⁽³⁾) as well as its environmental stability of modified MMB‐PPV film were also measured by degenerate four‐wave mixing system. The results showed that the surface conductivity of MMB‐PPV film was up to 3.2 × 10^?2 S when ion implantation was performed with the energy of 35 keV at an ion dose of 9.6 × 10¹⁶ ions/cm², which was seven order of magnitude higher than that of the pristine film. UV‐Vis absorption spectra demonstrated that the optical absorption of MMB‐PPV film was enhanced gradually in the visible region followed by a red shift of optical absorption threshold and the E_g value was reduced from 2.12 eV to 1.59 eV with the increase of ion dose and energy. The maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film was obtained with the ion energy of 20 keV at an ion dose of 3.8 × 10¹⁶ ions/cm², which was almost 33 times larger than that for pristine film. In comparison to the reduction of 17% in the χ⁽³⁾ value of pristine MMB‐PPV film, the maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film decreased by over 5.3% when they had been exposed under the same ambient conditions for 90 days. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 2072–2077, 2010     

Paramagnetic properties of ion-implanted polymer layers

Films of polyethylene, polyethylene terephthalate, and polyamine-6 implanted with B⁺ and N⁺ ions with an energy of 100 keV are investigated by an EPR method in a dose interval of 1·10¹⁴–1·10¹⁷ cm⁻². It is shown that paramagnetic centers with g=2.0025 formed in the implanted polymers have a nature similar to the nature of paramagnetic centers of pyrolized and initially conducting polymers. Correspondence of the character of the variation in paramagnetic characteristics of the modified polymers to the model proposed earlier for the formation of pyrocarbon “drops” in ion implantation is revealed. The relaxation times for paramagnetic centers in the implanted polymer films are calculated and assumptions are made about the formation of a quasi-two-dimensional electron gas as well as the possibility of magnetic ordering in polymer-film layers modified by high-dosage implantation. The effect of oxygen on the electron states of the implanted polymer specimens is studied. Belarusian State University, 4, Skorina Ave., Minsk, 220050 Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 562–567, July–August, 1998.     

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.     

氮离子注入GCr15轴承钢改性的时效机理及摩擦学性能探讨

对１２年前经离子注入处理后的ＧＣｒ１５轴承钢表面耐磨性能的时间效应进行了探讨。发现离子注入材料的改性效果存在时间效应性。利用ＡＥＳ和Ｘ射线衍射分析发现，掺杂原子及材料表面吸附的氧原子的多元迁移和硬质相的生成是造成离子注入材料改性时效的原因。